Patents by Inventor Homan Bernard Yuen
Homan Bernard Yuen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9985152Abstract: An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07?x?0.18, 0.025?y?0.04 and 0.001?z?0.03.Type: GrantFiled: December 27, 2016Date of Patent: May 29, 2018Assignee: SOLAR JUNCTION CORPORATIONInventors: Rebecca Elizabeth Jones-Albertus, Homan Bernard Yuen, Ting Liu, Pranob Misra
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Publication number: 20170338357Abstract: Dilute nitride subcells with graded doping are disclosed. Dilute nitride subcells having graded doping display improved efficiency, short circuit current density, and open circuit voltage.Type: ApplicationFiled: May 15, 2017Publication date: November 23, 2017Inventors: TING LIU, PRANOB MISRA, HOMAN BERNARD YUEN, REBECCA ELIZABETH JONES-ALBERTUS
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Publication number: 20170110607Abstract: An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07?x?0.18, 0.025?y?0.04 and 0.001?z?0.03.Type: ApplicationFiled: December 27, 2016Publication date: April 20, 2017Inventors: REBECCA ELIZABETH JONES-ALBERTUS, HOMAN BERNARD YUEN, TING LIU, PRANOB MISRA
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Publication number: 20160111569Abstract: An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07?x?0.18, 0.025?y?0.04 and 0.001?z?0.03.Type: ApplicationFiled: December 28, 2015Publication date: April 21, 2016Inventors: REBECCA ELIZABETH JONES-ALBERTUS, HOMAN BERNARD YUEN, TING LIU, PRANOB MISRA
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Patent number: 9252315Abstract: An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07?x?0.18, 0.025?y?0.04 and 0.001?z?0.03.Type: GrantFiled: April 3, 2015Date of Patent: February 2, 2016Assignee: Solar Junction CorporationInventors: Rebecca Elizabeth Jones-Albertus, Homan Bernard Yuen, Ting Liu, Pranob Misra
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Patent number: 9214580Abstract: A lattice-matched solar cell having a dilute nitride-based sub-cell has exponential doping to thereby control current-carrying capacity of the solar cell. Specifically a solar cell with at least one dilute nitride sub-cell that has a variably doped base or emitter is disclosed. In one embodiment, a lattice matched multi junction solar cell has an upper sub-cell, a middle sub-cell and a lower dilute nitride sub-cell, the lower dilute nitride sub-cell having doping in the base and/or the emitter that is at least partially exponentially doped so as to improve its solar cell performance characteristics. In construction, the dilute nitride sub-cell may have the lowest bandgap and be lattice matched to a substrate, the middle cell typically has a higher bandgap than the dilute nitride sub-cell while it is lattice matched to the dilute nitride sub-cell. The upper sub-cell typically has the highest bandgap and is lattice matched to the adjacent sub-cell.Type: GrantFiled: October 28, 2010Date of Patent: December 15, 2015Assignee: Solar Junction CorporationInventors: Pranob Misra, Rebecca Elizabeth Jones, Ting Liu, Ilya Fushman, Homan Bernard Yuen
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Publication number: 20150214412Abstract: An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07?x?0.18, 0.025?y?0.04 and 0.001?z?0.03.Type: ApplicationFiled: April 3, 2015Publication date: July 30, 2015Inventors: Rebecca Elizabeth Jones-Albertus, HOMAN BERNARD YUEN, TING LIU, PRANOB MISRA
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Publication number: 20150122318Abstract: An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07?x?0.18, 0.025?y?0.04 and 0.001?z?0.03.Type: ApplicationFiled: January 15, 2015Publication date: May 7, 2015Inventors: REBECCA ELIZABETH JONES-ALBERTUS, HOMAN BERNARD YUEN, TING LIU, PRANOB MISRA
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Patent number: 9018522Abstract: An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07?x?0.18, 0.025?y?0.04 and 0.001?z?0.03.Type: GrantFiled: October 10, 2014Date of Patent: April 28, 2015Assignee: Solar Junction CorporationInventors: Rebecca Elizabeth Jones-Albertus, Homan Bernard Yuen, Ting Liu, Pranob Misra
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Publication number: 20150027520Abstract: An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07?x?0.18, 0.025?y?0.04 and 0.001?z?0.03.Type: ApplicationFiled: October 10, 2014Publication date: January 29, 2015Inventors: REBECCA ELIZABETH JONES-ALBERTUS, HOMAN BERNARD YUEN, TING LlU, PRANOB MISRA
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Patent number: 8912433Abstract: An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07?x?0.18, 0.025?y?0.04 and 0.001?z?0.03.Type: GrantFiled: January 11, 2013Date of Patent: December 16, 2014Assignee: Solar Junction CorporationInventors: Rebecca Elizabeth Jones, Homan Bernard Yuen, Ting Liu, Pranob Misra
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Patent number: 8575473Abstract: An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content, and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07?x?0.18, 0.025?y?0.04 and 0.001?z?0.03.Type: GrantFiled: September 14, 2012Date of Patent: November 5, 2013Assignee: Solar Junction CorporationInventors: Rebecca Elizabeth Jones, Homan Bernard Yuen, Ting Liu, Pranob Misra
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Publication number: 20130014815Abstract: An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content, and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07?x?0.18, 0.025?y?0.04 and 0.001?z?0.03.Type: ApplicationFiled: September 14, 2012Publication date: January 17, 2013Applicant: Solar Junction CorpInventors: Rebecca Elizabeth Jones, Homan Bernard Yuen, Ting Liu, Pranob Misra
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Publication number: 20120103403Abstract: A lattice-matched solar cell having a dilute nitride-based sub-cell has exponential doping to thereby control current-carrying capacity of the solar cell. Specifically a solar cell with at least one dilute nitride sub-cell that has a variably doped base or emitter is disclosed. In one embodiment, a lattice matched multi junction solar cell has an upper sub-cell, a middle sub-cell and a lower dilute nitride sub-cell, the lower dilute nitride sub-cell having doping in the base and/or the emitter that is at least partially exponentially doped so as to improve its solar cell performance characteristics. In construction, the dilute nitride sub-cell may have the lowest bandgap and be lattice matched to a substrate, the middle cell typically has a higher bandgap than the dilute nitride sub-cell while it is lattice matched to the dilute nitride sub-cell. The upper sub-cell typically has the highest bandgap and is lattice matched to the adjacent sub-cell.Type: ApplicationFiled: October 28, 2010Publication date: May 3, 2012Applicant: Solar Junction CorporationInventors: Pranob Misra, Rebecca Elizabeth Jones, Ting Liu, Ilya Fushman, Homan Bernard Yuen
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Publication number: 20110232730Abstract: An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07?x?0.18, 0.025?y?0.04 and 0.001?z?0.03.Type: ApplicationFiled: March 29, 2010Publication date: September 29, 2011Applicant: Solar Junction Corp.Inventors: Rebecca Elizabeth Jones, Homan Bernard Yuen, Ting Liu, Pranob Misra