Patents by Inventor Homayoon Haddad
Homayoon Haddad has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170161557Abstract: Systems, devices, and methods for authenticating an individual or user using biometric features is provided. In one aspect, for example, a system for authenticating a user through identification of at least one biometric feature can include an active light source capable of emitting electromagnetic radiation having a peak emission wavelength at from about 700 nm to about 1200 nm, where the active light source is positioned to emit the electromagnetic radiation to impinge on at least one biometric feature of the user, and an image sensor having infrared light-trapping pixels positioned relative to the active light source to receive and detect the electromagnetic radiation upon reflection from the at least one biometric feature of the user.Type: ApplicationFiled: January 17, 2014Publication date: June 8, 2017Applicant: SIOnyx, Inc.Inventors: Stephen D. Saylor, Martin U. Pralle, James E. Carey, Homayoon Haddad
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Patent number: 9673243Abstract: Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and a passivation region positioned between the textured region and the at least one junction. The passivation region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.Type: GrantFiled: February 19, 2013Date of Patent: June 6, 2017Assignee: SiOnyx, LLCInventors: Homayoon Haddad, Jeffrey McKee, Jutao Jiang, Drake Miller, Chintamani Palsule, Leonard Forbes
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Patent number: 9673250Abstract: Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor layer having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor layer and positioned to interact with electromagnetic radiation. The textured region can be formed from a series of shallow trench isolation features.Type: GrantFiled: October 15, 2015Date of Patent: June 6, 2017Assignee: SiOnyx, LLCInventors: Homayoon Haddad, Jutao Jiang
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Patent number: 9666636Abstract: Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region.Type: GrantFiled: October 6, 2016Date of Patent: May 30, 2017Assignee: SiOnyx, LLCInventors: Homayoon Haddad, Jeffrey McKee, Jutao Jiang, Drake Miller, Chintamani Palsule, Leonard Forbes
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Publication number: 20170025467Abstract: Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region.Type: ApplicationFiled: October 6, 2016Publication date: January 26, 2017Inventors: Homayoon Haddad, Jeffrey McKee, Jutao Jiang, Drake Miller, Chintamani Palsule, Leonard Forbes
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Patent number: 9553122Abstract: A backside illuminated image sensor includes a substrate, a backside passivation layer disposed on backside of the substrate, and a transparent conductive layer disposed on the backside passivation layer.Type: GrantFiled: April 9, 2013Date of Patent: January 24, 2017Assignee: INTELLECTUAL VENTURES II LLCInventors: Jaroslav Hynecek, Leonard Forbes, Homayoon Haddad, Thomas Joy
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Patent number: 9496308Abstract: Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region.Type: GrantFiled: June 11, 2012Date of Patent: November 15, 2016Assignee: SiOnyx, LLCInventors: Homayoon Haddad, Jeffrey McKee, Jutao Jiang, Drake Miller, Chintamani Palsule, Leonard Forbes
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Publication number: 20160071900Abstract: A backside illuminated image sensor includes a substrate, a backside passivation layer disposed on backside of the substrate, and a transparent conductive layer disposed on the backside passivation layer.Type: ApplicationFiled: November 18, 2015Publication date: March 10, 2016Inventors: Jaroslav Hynecek, Leonard Forbes, Homayoon Haddad, Thomas Joy
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Publication number: 20160035782Abstract: Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor layer having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor layer and positioned to interact with electromagnetic radiation. The textured region can be formed from a series of shallow trench isolation features.Type: ApplicationFiled: October 15, 2015Publication date: February 4, 2016Applicant: SIONYX, INC.Inventors: Homayoon Haddad, Jutao Jiang
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Publication number: 20150356351Abstract: Systems, devices, and methods for authenticating an individual or user using biometric features is provided. In one aspect, for example, a system for authenticating a user through identification of at least one biometric feature can include an active light source capable of emitting electromagnetic radiation having a peak emission wavelength at from about 700 nm to about 1200 nm, where the active light source is positioned to emit the electromagnetic radiation to impinge on at least one biometric feature of the user, and an image sensor having infrared light-trapping pixels positioned relative to the active light source to receive and detect the electromagnetic radiation upon reflection from the at least one biometric feature of the user.Type: ApplicationFiled: January 17, 2014Publication date: December 10, 2015Applicant: SIOnyx, Inc.Inventors: Stephen D. Saylor, Martin U. Pralle, James E. Carey, Homayoon Haddad
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Patent number: 9209345Abstract: Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor layer having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor layer and positioned to interact with electromagnetic radiation. The textured region can be formed from a series of shallow trench isolation features.Type: GrantFiled: November 19, 2013Date of Patent: December 8, 2015Assignee: SiOnyx, Inc.Inventors: Homayoon Haddad, Jutao Jiang
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Publication number: 20150270306Abstract: Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor substrate having multiple doped regions forming at least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction. In one aspect, the textured region is operable to facilitate generation of an electrical signal from the detection of infrared electromagnetic radiation. In another aspect, interacting with electromagnetic radiation further includes increasing the semiconductor substrate's effective absorption wavelength as compared to a semiconductor substrate lacking a textured region.Type: ApplicationFiled: March 24, 2014Publication date: September 24, 2015Applicant: SiOnyx, Inc.Inventors: Homayoon Haddad, Jutao Jiang, Jeffrey McKee, Drake Miller, Leonard Forbes, Chintamani Palsule
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Publication number: 20150014803Abstract: Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor layer having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor layer and positioned to interact with electromagnetic radiation. The textured region can be formed from a series of shallow trench isolation features.Type: ApplicationFiled: November 19, 2013Publication date: January 15, 2015Applicant: SiOnyx, Inc.Inventor: Homayoon Haddad
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Patent number: 8865507Abstract: Semiconductor devices having three dimensional (3D) architectures and methods form making such devices are provided. In one aspect, for example, a method for making a semiconductor device can include forming a device layer on a front side of a semiconductor layer that is substantially defect free, bonding a carrier substrate to the device layer, processing the semiconductor layer on a back side opposite the device layer to form a processed surface, and bonding a smart substrate to the processed surface. In some aspects, the method can also include removing the carrier substrate from the semiconductor layer to expose the device layer.Type: GrantFiled: December 12, 2012Date of Patent: October 21, 2014Assignee: SiOnyx, Inc.Inventors: Homayoon Haddad, Leonard Forbes
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Publication number: 20140307059Abstract: Stacked imager devices that can determine distance and generate three dimensional representations of a subject and associated methods are provided. In one aspect, an imaging system can include a first imager array having a first light incident surface and a second imager array having a second light incident surface. The second imager array can be coupled to the first imager array at a surface that is opposite the first light incident surface, with the second light incident surface being oriented toward the first imager array and at least substantially uniformly spaced. The system can also include a system lens positioned to direct incident light along an optical pathway onto the first light incident surface. The first imager array is operable to detect a first portion of the light passing along the optical pathway and to pass through a second portion of the light, where the second imager array is operable to detect at least a part of the second portion of light.Type: ApplicationFiled: March 12, 2014Publication date: October 16, 2014Inventors: Homayoon Haddad, Chen Feng, Leonard Forbes
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Publication number: 20140197509Abstract: Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and a passivation region positioned between the textured region and the at least one junction. The passivation region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.Type: ApplicationFiled: February 19, 2013Publication date: July 17, 2014Applicant: SiOnyx, Inc.Inventors: Homayoon Haddad, Jeffrey McKee, Jutao Jiang, Drake Miller, Chintamani Palsule, Leonard Forbes
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Patent number: 8698084Abstract: 3D sensors, systems, and associated methods are provided. In one aspect, for example, a monolithic 3D sensor for detecting infrared and visible light can include a semiconductor substrate having a device surface, at least one visible light photodiode formed at the device surface and at least one 3D photodiode formed at the device surface in proximity to the at least one visible light photodiode. The device can further include a quantum efficiency enhanced infrared light region functionally coupled to the at least one 3D photodiode and positioned to interact with electromagnetic radiation. In one aspect, the quantum efficiency enhanced infrared light region is a textured region located at the device surface.Type: GrantFiled: March 12, 2012Date of Patent: April 15, 2014Assignee: SiOnyx, Inc.Inventors: Jutao Jiang, Jeffrey McKee, Homayoon Haddad, Chris Sungkwon Hong
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Patent number: 8680591Abstract: Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor substrate having multiple doped regions forming at least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction. In one aspect, the textured region is operable to facilitate generation of an electrical signal from the detection of infrared electromagnetic radiation. In another aspect, interacting with electromagnetic radiation further includes increasing the semiconductor substrate's effective absorption wavelength as compared to a semiconductor substrate lacking a textured region.Type: GrantFiled: September 17, 2010Date of Patent: March 25, 2014Assignee: Sionyx, Inc.Inventors: Homayoon Haddad, Jutao Jiang, Jeffrey McKee, Drake Miller, Leonard Forbes, Chintamani Palsule
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Publication number: 20130237004Abstract: A backside illuminated image sensor includes a substrate, a backside passivation layer disposed on backside of the substrate, and a transparent conductive layer disposed on the backside passivation layer.Type: ApplicationFiled: April 9, 2013Publication date: September 12, 2013Inventors: Jaroslav Hynecek, Leonard Forbes, Homayoon Haddad, Thomas Joy
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Publication number: 20130168803Abstract: Semiconductor-on-insulator (SOI) devices and associated methods are provided. In one aspect, for example, a method for making a SOI device can include forming a device layer on a front side of a semiconductor layer, bonding a first substrate to the front side of the device layer, processing the semiconductor layer on a back side opposite the device layer to form a processed surface, and bonding a second substrate to the processed surface. In some aspects, the method can further include removing the first substrate from the front side to expose the device layer. In one aspect, forming the device layer can include forming optoelectronic circuitry at the front side of the semiconductor layer.Type: ApplicationFiled: September 17, 2012Publication date: July 4, 2013Applicant: SIONYX, INC.Inventors: Homayoon Haddad, Leonard Forbes