Patents by Inventor Homer M. Manning
Homer M. Manning has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8786001Abstract: A method for forming double-sided capacitors for a semiconductor device includes forming a dielectric structure which supports capacitor bottom plates during wafer processing. The structure is particularly useful for supporting the bottom plates during removal of a base dielectric layer to expose the outside of the bottom plates to form a double-sided capacitor. The support structure further supports the bottom plates during formation of a cell dielectric layer, a capacitor top plate, and final supporting dielectric. An inventive structure is also described.Type: GrantFiled: January 19, 2010Date of Patent: July 22, 2014Assignee: Round Rock Research, LLCInventor: Homer M. Manning
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Patent number: 8482047Abstract: DRAM cell arrays having a cell area of about 4F2 comprise an array of vertical transistors with buried bit lines and vertical double gate electrodes. The buried bit lines comprise a silicide material and are provided below a surface of the substrate. The word lines are optionally formed of a silicide material and form the gate electrode of the vertical transistors. The vertical transistor may comprise sequentially formed doped polysilicon layers or doped epitaxial layers. At least one of the buried bit lines is orthogonal to at least one of the vertical gate electrodes of the vertical transistors.Type: GrantFiled: September 10, 2012Date of Patent: July 9, 2013Assignee: Micron Technology, Inc.Inventors: Todd R. Abbott, Homer M. Manning
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Publication number: 20130001663Abstract: DRAM cell arrays having a cell area of about 4F2 comprise an array of vertical transistors with buried bit lines and vertical double gate electrodes. The buried bit lines comprise a silicide material and are provided below a surface of the substrate. The word lines are optionally formed of a silicide material and form the gate electrode of the vertical transistors. The vertical transistor may comprise sequentially formed doped polysilicon layers or doped epitaxial layers. At least one of the buried bit lines is orthogonal to at least one of the vertical gate electrodes of the vertical transistors.Type: ApplicationFiled: September 10, 2012Publication date: January 3, 2013Applicant: MICRON TECHNOLOGY, INC.Inventors: Todd R. Abbott, Homer M. Manning
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Publication number: 20110254067Abstract: DRAM cell arrays having a cell area of about 4F2 comprise an array of vertical transistors with buried bit lines and vertical double gate electrodes. The buried bit lines comprise a silicide material and are provided below a surface of the substrate. The word lines are optionally formed of a silicide material and form the gate electrode of the vertical transistors. The vertical transistor may comprise sequentially formed doped polysilicon layers or doped epitaxial layers. At least one of the buried bit lines is orthogonal to at least one of the vertical gate electrodes of the vertical transistors.Type: ApplicationFiled: June 27, 2011Publication date: October 20, 2011Applicant: MICRON TECHNOLOGY, INC.Inventors: Todd R. Abbott, Homer M. Manning
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Patent number: 7989866Abstract: DRAM cell arrays having a cell area of about 4 F2 comprise an array of vertical transistors with buried bit lines and vertical double gate electrodes. The buried bit lines comprise a silicide material and are provided below a surface of the substrate. The word lines are optionally formed of a silicide material and form the gate electrode of the vertical transistors. The vertical transistor may comprise sequentially formed doped polysilicon layers or doped epitaxial layers. At least one of the buried bit lines is orthogonal to at least one of the vertical gate electrodes of the vertical transistors.Type: GrantFiled: September 28, 2009Date of Patent: August 2, 2011Assignee: Micron Technology, Inc.Inventors: Todd R. Abbott, Homer M. Manning
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Patent number: 7736969Abstract: DRAM cell arrays having a cell area of about 4F2 comprise an array of vertical transistors with buried bit lines and vertical double gate electrodes. The buried bit lines comprise a silicide material and are provided below a surface of the substrate. The word lines are optionally formed of a silicide material and form the gate electrode of the vertical transistors. The vertical transistor may comprise sequentially formed doped polysilicon layers or doped epitaxial layers. At least one of the buried bit lines is orthogonal to at least one of the vertical gate electrodes of the vertical transistors.Type: GrantFiled: October 25, 2005Date of Patent: June 15, 2010Assignee: Micron Technology, Inc.Inventors: Todd R. Abbott, Homer M. Manning
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Publication number: 20100117196Abstract: A method for forming double-sided capacitors for a semiconductor device includes forming a dielectric structure which supports capacitor bottom plates during wafer processing. The structure is particularly useful for supporting the bottom plates during removal of a base dielectric layer to expose the outside of the bottom plates to form a double-sided capacitor. The support structure further supports the bottom plates during formation of a cell dielectric layer, a capacitor top plate, and final supporting dielectric. An inventive structure is also described.Type: ApplicationFiled: January 19, 2010Publication date: May 13, 2010Inventor: Homer M. Manning
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Publication number: 20100052027Abstract: DRAM cell arrays having a cell area of about 4 F2 comprise an array of vertical transistors with buried bit lines and vertical double gate electrodes. The buried bit lines comprise a silicide material and are provided below a surface of the substrate. The word lines are optionally formed of a silicide material and form the gate electrode of the vertical transistors. The vertical transistor may comprise sequentially formed doped polysilicon layers or doped epitaxial layers. At least one of the buried bit lines is orthogonal to at least one of the vertical gate electrodes of the vertical transistors.Type: ApplicationFiled: September 28, 2009Publication date: March 4, 2010Applicant: MICRON TECHNOLOGY, INC.Inventors: Todd R. Abbott, Homer M. Manning
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Patent number: 7655968Abstract: A method for forming double-sided capacitors for a semiconductor device includes forming a dielectric structure which supports capacitor bottom plates during wafer processing. The structure is particularly useful for supporting the bottom plates during removal of a base dielectric layer to expose the outside of the bottom plates to form a double-sided capacitor. The support structure further supports the bottom plates during formation of a cell dielectric layer, a capacitor top plate, and final supporting dielectric. An inventive structure is also described.Type: GrantFiled: March 10, 2005Date of Patent: February 2, 2010Assignee: Micron Technology, Inc.Inventor: Homer M. Manning
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Patent number: 7518182Abstract: DRAM cell arrays having a cell area of about 4F2 comprise an array of vertical transistors with buried bit lines and vertical double gate electrodes. The buried bit lines comprise a silicide material and are provided below a surface of the substrate. The word lines are optionally formed of a silicide material and form the gate electrode of the vertical transistors. The vertical transistor may comprise sequentially formed doped polysilicon layers or doped epitaxial layers. At least one of the buried bit lines is orthogonal to at least one of the vertical gate electrodes of the vertical transistors.Type: GrantFiled: July 20, 2004Date of Patent: April 14, 2009Assignee: Micron Technology, Inc.Inventors: Todd R. Abbott, Homer M. Manning
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Patent number: 7067385Abstract: A method for forming double-sided capacitors for a semiconductor device includes forming a dielectric structure which supports capacitor bottom plates during wafer processing. The structure is particularly useful for supporting the bottom plates during removal of a base dielectric layer to expose the outside of the bottom plates to form a double-sided capacitor. The support structure further supports the bottom plates during formation of a cell dielectric layer, a capacitor top plate, and final supporting dielectric. An inventive structure is also described.Type: GrantFiled: September 4, 2003Date of Patent: June 27, 2006Assignee: Micron Technology, Inc.Inventor: Homer M. Manning