Patents by Inventor Homer M. Manning

Homer M. Manning has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8786001
    Abstract: A method for forming double-sided capacitors for a semiconductor device includes forming a dielectric structure which supports capacitor bottom plates during wafer processing. The structure is particularly useful for supporting the bottom plates during removal of a base dielectric layer to expose the outside of the bottom plates to form a double-sided capacitor. The support structure further supports the bottom plates during formation of a cell dielectric layer, a capacitor top plate, and final supporting dielectric. An inventive structure is also described.
    Type: Grant
    Filed: January 19, 2010
    Date of Patent: July 22, 2014
    Assignee: Round Rock Research, LLC
    Inventor: Homer M. Manning
  • Patent number: 8482047
    Abstract: DRAM cell arrays having a cell area of about 4F2 comprise an array of vertical transistors with buried bit lines and vertical double gate electrodes. The buried bit lines comprise a silicide material and are provided below a surface of the substrate. The word lines are optionally formed of a silicide material and form the gate electrode of the vertical transistors. The vertical transistor may comprise sequentially formed doped polysilicon layers or doped epitaxial layers. At least one of the buried bit lines is orthogonal to at least one of the vertical gate electrodes of the vertical transistors.
    Type: Grant
    Filed: September 10, 2012
    Date of Patent: July 9, 2013
    Assignee: Micron Technology, Inc.
    Inventors: Todd R. Abbott, Homer M. Manning
  • Publication number: 20130001663
    Abstract: DRAM cell arrays having a cell area of about 4F2 comprise an array of vertical transistors with buried bit lines and vertical double gate electrodes. The buried bit lines comprise a silicide material and are provided below a surface of the substrate. The word lines are optionally formed of a silicide material and form the gate electrode of the vertical transistors. The vertical transistor may comprise sequentially formed doped polysilicon layers or doped epitaxial layers. At least one of the buried bit lines is orthogonal to at least one of the vertical gate electrodes of the vertical transistors.
    Type: Application
    Filed: September 10, 2012
    Publication date: January 3, 2013
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Todd R. Abbott, Homer M. Manning
  • Publication number: 20110254067
    Abstract: DRAM cell arrays having a cell area of about 4F2 comprise an array of vertical transistors with buried bit lines and vertical double gate electrodes. The buried bit lines comprise a silicide material and are provided below a surface of the substrate. The word lines are optionally formed of a silicide material and form the gate electrode of the vertical transistors. The vertical transistor may comprise sequentially formed doped polysilicon layers or doped epitaxial layers. At least one of the buried bit lines is orthogonal to at least one of the vertical gate electrodes of the vertical transistors.
    Type: Application
    Filed: June 27, 2011
    Publication date: October 20, 2011
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Todd R. Abbott, Homer M. Manning
  • Patent number: 7989866
    Abstract: DRAM cell arrays having a cell area of about 4 F2 comprise an array of vertical transistors with buried bit lines and vertical double gate electrodes. The buried bit lines comprise a silicide material and are provided below a surface of the substrate. The word lines are optionally formed of a silicide material and form the gate electrode of the vertical transistors. The vertical transistor may comprise sequentially formed doped polysilicon layers or doped epitaxial layers. At least one of the buried bit lines is orthogonal to at least one of the vertical gate electrodes of the vertical transistors.
    Type: Grant
    Filed: September 28, 2009
    Date of Patent: August 2, 2011
    Assignee: Micron Technology, Inc.
    Inventors: Todd R. Abbott, Homer M. Manning
  • Patent number: 7736969
    Abstract: DRAM cell arrays having a cell area of about 4F2 comprise an array of vertical transistors with buried bit lines and vertical double gate electrodes. The buried bit lines comprise a silicide material and are provided below a surface of the substrate. The word lines are optionally formed of a silicide material and form the gate electrode of the vertical transistors. The vertical transistor may comprise sequentially formed doped polysilicon layers or doped epitaxial layers. At least one of the buried bit lines is orthogonal to at least one of the vertical gate electrodes of the vertical transistors.
    Type: Grant
    Filed: October 25, 2005
    Date of Patent: June 15, 2010
    Assignee: Micron Technology, Inc.
    Inventors: Todd R. Abbott, Homer M. Manning
  • Publication number: 20100117196
    Abstract: A method for forming double-sided capacitors for a semiconductor device includes forming a dielectric structure which supports capacitor bottom plates during wafer processing. The structure is particularly useful for supporting the bottom plates during removal of a base dielectric layer to expose the outside of the bottom plates to form a double-sided capacitor. The support structure further supports the bottom plates during formation of a cell dielectric layer, a capacitor top plate, and final supporting dielectric. An inventive structure is also described.
    Type: Application
    Filed: January 19, 2010
    Publication date: May 13, 2010
    Inventor: Homer M. Manning
  • Publication number: 20100052027
    Abstract: DRAM cell arrays having a cell area of about 4 F2 comprise an array of vertical transistors with buried bit lines and vertical double gate electrodes. The buried bit lines comprise a silicide material and are provided below a surface of the substrate. The word lines are optionally formed of a silicide material and form the gate electrode of the vertical transistors. The vertical transistor may comprise sequentially formed doped polysilicon layers or doped epitaxial layers. At least one of the buried bit lines is orthogonal to at least one of the vertical gate electrodes of the vertical transistors.
    Type: Application
    Filed: September 28, 2009
    Publication date: March 4, 2010
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Todd R. Abbott, Homer M. Manning
  • Patent number: 7655968
    Abstract: A method for forming double-sided capacitors for a semiconductor device includes forming a dielectric structure which supports capacitor bottom plates during wafer processing. The structure is particularly useful for supporting the bottom plates during removal of a base dielectric layer to expose the outside of the bottom plates to form a double-sided capacitor. The support structure further supports the bottom plates during formation of a cell dielectric layer, a capacitor top plate, and final supporting dielectric. An inventive structure is also described.
    Type: Grant
    Filed: March 10, 2005
    Date of Patent: February 2, 2010
    Assignee: Micron Technology, Inc.
    Inventor: Homer M. Manning
  • Patent number: 7518182
    Abstract: DRAM cell arrays having a cell area of about 4F2 comprise an array of vertical transistors with buried bit lines and vertical double gate electrodes. The buried bit lines comprise a silicide material and are provided below a surface of the substrate. The word lines are optionally formed of a silicide material and form the gate electrode of the vertical transistors. The vertical transistor may comprise sequentially formed doped polysilicon layers or doped epitaxial layers. At least one of the buried bit lines is orthogonal to at least one of the vertical gate electrodes of the vertical transistors.
    Type: Grant
    Filed: July 20, 2004
    Date of Patent: April 14, 2009
    Assignee: Micron Technology, Inc.
    Inventors: Todd R. Abbott, Homer M. Manning
  • Patent number: 7067385
    Abstract: A method for forming double-sided capacitors for a semiconductor device includes forming a dielectric structure which supports capacitor bottom plates during wafer processing. The structure is particularly useful for supporting the bottom plates during removal of a base dielectric layer to expose the outside of the bottom plates to form a double-sided capacitor. The support structure further supports the bottom plates during formation of a cell dielectric layer, a capacitor top plate, and final supporting dielectric. An inventive structure is also described.
    Type: Grant
    Filed: September 4, 2003
    Date of Patent: June 27, 2006
    Assignee: Micron Technology, Inc.
    Inventor: Homer M. Manning