Patents by Inventor Homi Mogul

Homi Mogul has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nickel alloy silicide including indium and a method of manufacture therefor
    Patent number: 7511350
    Abstract: The invention provides a semiconductor device, a method of manufacture therefore and a method for manufacturing an integrated circuit including the same. The semiconductor device, among other elements, may include a gate structure located over a substrate, the gate structure including a gate dielectric layer and gate electrode layer. The semiconductor device may further include source/drain regions located in/over the substrate and adjacent the gate structure, and a nickel alloy silicide located in the source/drain regions, the nickel alloy silicide having an amount of indium located therein.
    Type: Grant
    Filed: January 23, 2008
    Date of Patent: March 31, 2009
    Assignee: Texas Instruments Incorporated
    Inventors: Peijun J. Chen, Duofeng Yue, Amitabh Jain, Sue Crank, Thomas D. Bonifield, Homi Mogul
  • Nickel Alloy Silicide Including Indium and a Method of Manufacture Therefor
    Publication number: 20080128837
    Abstract: The invention provides a semiconductor device, a method of manufacture therefore and a method for manufacturing an integrated circuit including the same. The semiconductor device, among other elements, may include a gate structure located over a substrate, the gate structure including a gate dielectric layer and gate electrode layer. The semiconductor device may further include source/drain regions located in/over the substrate and adjacent the gate structure, and a nickel alloy silicide located in the source/drain regions, the nickel alloy silicide having an amount of indium located therein.
    Type: Application
    Filed: January 23, 2008
    Publication date: June 5, 2008
    Applicant: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Peijun J. Chen, Duofeng Yue, Amitabh Jain, Sue Crank, Thomas D. Bonifield, Homi Mogul
  • Nickel alloy silicide including indium and a method of manufacture therefor
    Patent number: 7344985
    Abstract: The invention provides a semiconductor device, a method of manufacture therefore and a method for manufacturing an integrated circuit including the same. The semiconductor device, among other elements, may include a gate structure located over a substrate, the gate structure including a gate dielectric layer and gate electrode layer. The semiconductor device may further include source/drain regions located in/over the substrate and adjacent the gate structure, and a nickel alloy silicide located in the source/drain regions, the nickel alloy silicide having an amount of indium located therein.
    Type: Grant
    Filed: October 20, 2006
    Date of Patent: March 18, 2008
    Assignee: Texas Instruments Incorporated
    Inventors: Peijun J. Chen, Duofeng Yue, Amitabh Jain, Sue Crank, Thomas D. Bonifield, Homi Mogul
  • Nickel silicide including indium and a method of manufacture therefor
    Publication number: 20070141840
    Abstract: The present invention provides a semiconductor device, a method of manufacture therefore and a method for manufacturing an integrated circuit including the same. The semiconductor device, among other elements, may include a substrate (110), as well as a nickel silicide region (170) located over the substrate (110), the nickel silicide region (170) having an amount of indium located therein.
    Type: Application
    Filed: February 26, 2007
    Publication date: June 21, 2007
    Applicant: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Peijun Chen, Duofeng Yue, Amitabh Jain, Sue Crank, Thomas Bonifield, Homi Mogul
  • Nickel silicide including indium and a method of manufacture therefor
    Patent number: 7211516
    Abstract: The present invention provides a semiconductor device, a method of manufacture therefore and a method for manufacturing an integrated circuit including the same. The semiconductor device, among other elements, may include a substrate (110), as well as a nickel silicide region (170) located over the substrate (110), the nickel silicide region (170) having an amount of indium located therein.
    Type: Grant
    Filed: April 1, 2005
    Date of Patent: May 1, 2007
    Assignee: Texas Instruments Incorporated
    Inventors: Peijun J. Chen, Duofeng Yue, Amitabh Jain, Sue Crank, Thomas D. Bonifield, Homi Mogul
  • NICKEL ALLOY SILICIDE INCLUDING INDIUM AND A METHOD OF MANUFACTURE THEREFOR
    Publication number: 20070049022
    Abstract: The invention provides a semiconductor device, a method of manufacture therefore and a method for manufacturing an integrated circuit including the same. The semiconductor device, among other elements, may include a gate structure located over a substrate, the gate structure including a gate dielectric layer and gate electrode layer. The semiconductor device may further include source/drain regions located in/over the substrate and adjacent the gate structure, and a nickel alloy silicide located in the source/drain regions, the nickel alloy silicide having an amount of indium located therein.
    Type: Application
    Filed: October 20, 2006
    Publication date: March 1, 2007
    Applicant: Texas Instruments, Incorporated
    Inventors: Peijun Chen, Duofeng Yue, Amitabh Jain, Sue Crank, Thomas Bonifield, Homi Mogul
  • Nickel silicide including indium and a method of manufacture therefor
    Publication number: 20060223295
    Abstract: The present invention provides a semiconductor device, a method of manufacture therefore and a method for manufacturing an integrated circuit including the same. The semiconductor device, among other elements, may include a substrate (110), as well as a nickel silicide region (170) located over the substrate (110), the nickel silicide region (170) having an amount of indium located therein.
    Type: Application
    Filed: April 1, 2005
    Publication date: October 5, 2006
    Applicant: Texas Instruments, Incorporated
    Inventors: Peijun Chen, Duofeng Yue, Amitabh Jain, Sue Crank, Thomas Bonifield, Homi Mogul