Patents by Inventor Homi Nariman

Homi Nariman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming silicon oxynitride films
    Patent number: 6372668
    Abstract: The present invention is directed to a method of forming process layers comprised of silicon oxynitride. In one embodiment, the method comprises positioning a wafer in a process chamber, introducing silane and nitrous oxide into the chamber at a flow rate ratio ranging from approximately 2.6-3.8 silane to nitrous oxide, and generating a plasma in the chamber using a high frequency to low frequency power setting ratio ranging from approximately 1.2-1.8.
    Type: Grant
    Filed: January 18, 2000
    Date of Patent: April 16, 2002
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Sey-Ping Sun, Homi Nariman, Hartmut Ruelke
  • Method Of Forming Silicon Oxynitride Films
    Publication number: 20010044220
    Abstract: The present invention is directed to a method of forming process layers comprised of silicon oxynitride. In one embodiment, the method comprises positioning a wafer in a process chamber, introducing silane and nitrous oxide into the chamber at a flow rate ratio ranging from approximately 2.6-3.8 silane to nitrous oxide, and generating a plasma in the chamber using a high frequency to low frequency power setting ratio ranging from approximately 1.2-1.8.
    Type: Application
    Filed: January 18, 2000
    Publication date: November 22, 2001
    Inventors: Sey-Ping Sun, Homi Nariman, Hartmut Ruelke