Patents by Inventor Homyar C. Mogul

Homyar C. Mogul has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Interconnect sensor for detecting delamination
    Patent number: 8618539
    Abstract: An interconnect sensor for detecting delamination due to coefficient of thermal expansion mismatch and/or mechanical stress. The sensor comprises a conductive path that includes a via disposed between two back end of line metal layers separated by a dielectric. The via is coupled between a first probe structure and a second probe structure and mechanically coupled to a stress inducing structure. The via is configured to alter the conductive path in response to mechanical stress caused by the stress inducing structure. The stress inducing structure can be a through silicon via or a solder ball. The dielectric material can be a low-k dielectric material. In another embodiment, a method of forming an interconnect sensor is provided for detecting delamination.
    Type: Grant
    Filed: November 5, 2009
    Date of Patent: December 31, 2013
    Assignee: QUALCOMM Incorporated
    Inventors: Brian Matthew Henderson, Shiqun Gu, Homyar C. Mogul, Mark M. Nakamoto, Arvind Chandrasekaran
  • CIRCUIT AND METHOD FOR TESTING INSULATING MATERIAL
    Publication number: 20120212245
    Abstract: An integrated circuit is disclosed. The integrated circuit includes an insulating material layer. The integrated circuit also includes a metal structure. Furthermore, the integrated circuit includes a via through the insulating material layer that is coupled to the metal structure for testing insulating material by applying dynamic voltage switching to two adjacent metal components of the metal structure.
    Type: Application
    Filed: February 1, 2012
    Publication date: August 23, 2012
    Applicant: QUALCOMM Incorporated
    Inventors: Angelo Pinto, Martin L. Villafana, You-Wen Yau, Homyar C. Mogul, Lavakumar Ranganathan, Rohan V. Gupte, Weijia Qi, Kent J. Pingrey, Carlos P. Aguilar, Paul J. Giotta, Leon Y. Leung, Jina M. Antosz, Bhupen M. Shah, Choh fei Yeap, Michael J. Campbell, Lawrence A. Elugbadebo, Allen A.B. Hogan
  • Interconnect Sensor for Detecting Delamination
    Publication number: 20110101347
    Abstract: An interconnect sensor for detecting delamination due to coefficient of thermal expansion mismatch and/or mechanical stress. The sensor comprises a conductive path that includes a via disposed between two back end of line metal layers separated by a dielectric. The via is coupled between a first probe structure and a second probe structure and mechanically coupled to a stress inducing structure. The via is configured to alter the conductive path in response to mechanical stress caused by the stress inducing structure. The stress inducing structure can be a through silicon via or a solder ball. The dielectric material can be a low-k dielectric material. In another embodiment, a method of forming an interconnect sensor is provided for detecting delamination.
    Type: Application
    Filed: November 5, 2009
    Publication date: May 5, 2011
    Applicant: QUALCOMM INCORPORATED
    Inventors: Brian Matthew Henderson, Shiqun Gu, Homyar C. Mogul, Mark M. Nakamoto, Arvind Chandrasekaran