Patents by Inventor Homyoung An

Homyoung An has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11814100
    Abstract: A structural support system for a vehicle having a longitudinal axis extending from a front of the vehicle to a rear of the vehicle includes a cradle configured to support an engine of the vehicle, a structural side rail assembly having first and second side rails, a first set of six cradle attachments coupling the cradle to the first side rail, and a second set of six cradle attachments coupling the cradle to the second side rail. A predetermined portion of the cradle attachments of both the first and second set of six cradle attachments are designed to intentionally detach during a frontal impact event to facilitate absorbing impact energy and reducing deceleration and passenger compartment intrusion.
    Type: Grant
    Filed: June 16, 2021
    Date of Patent: November 14, 2023
    Assignee: FCA US LLC
    Inventors: Sunil Waghmare, Abhijeet Thorat, Homyoung Kim
  • Publication number: 20220402550
    Abstract: A structural support system for a vehicle having a longitudinal axis extending from a front of the vehicle to a rear of the vehicle includes a cradle configured to support an engine of the vehicle, a structural side rail assembly having first and second side rails, a first set of six cradle attachments coupling the cradle to the first side rail, and a second set of six cradle attachments coupling the cradle to the second side rail. A predetermined portion of the cradle attachments of both the first and second set of six cradle attachments are designed to intentionally detach during a frontal impact event to facilitate absorbing impact energy and reducing deceleration and passenger compartment intrusion.
    Type: Application
    Filed: June 16, 2021
    Publication date: December 22, 2022
    Inventors: Sunil Waghmare, Abhijeet Thorat, Homyoung Kim
  • Patent number: 9806231
    Abstract: The present invention relates to a semiconductor light-emitting device having a two-stage photonic crystal pattern formed thereon, and to a method for manufacturing same. According to the present invention, a second photonic crystal pattern is formed inside a first photonic crystal pattern formed on a semiconductor layer or transparent electrode layer, in order to improve light extraction efficiency. Also, according to the present invention, in order to form a second fine nanoscale photonic crystal pattern in the first photonic crystal pattern, a nanosphere lithography process employing polymer beads is used, and a trapping layer made of a thermoplastic resin was used to conveniently form polymer beads in a single layer so as to eliminate the inconvenience of having to calculate and change process variables according to polymer bead sizes in traditional nanosphere lithography processes.
    Type: Grant
    Filed: January 13, 2016
    Date of Patent: October 31, 2017
    Assignee: INTELLECTUAL DISCOVERY CO., LTD.
    Inventors: Taegeun Kim, Homyoung An, Jaein Sim
  • Publication number: 20160126418
    Abstract: The present invention relates to a semiconductor light-emitting device having a two-stage photonic crystal pattern formed thereon, and to a method for manufacturing same. According to the present invention, a second photonic crystal pattern is formed inside a first photonic crystal pattern formed on a semiconductor layer or transparent electrode layer, in order to improve light extraction efficiency. Also, according to the present invention, in order to form a second fine nanoscale photonic crystal pattern in the first photonic crystal pattern, a nanosphere lithography process employing polymer beads is used, and a trapping layer made of a thermoplastic resin was used to conveniently form polymer beads in a single layer so as to eliminate the inconvenience of having to calculate and change process variables according to polymer bead sizes in traditional nanosphere lithography processes.
    Type: Application
    Filed: January 13, 2016
    Publication date: May 5, 2016
    Applicant: INTELLECTUAL DISCOVERY CO., LTD.
    Inventors: Taegeun KIM, Homyoung AN, Jaein SIM
  • Patent number: 8964462
    Abstract: The present invention relates to a nonvolatile memory device and to a method for manufacturing same. According to the present invention, the blocking insulation layer of a nonvolatile memory device having a typical SONOS structure is replaced with a threshold voltage switching material, which changes to a low resistance state only while a voltage greater than a threshold voltage is applied while maintaining a high resistance state under normal conditions and returning to the high resistance state when the applied voltage is removed. The present invention performs a program operation by injecting charges from a gate electrode layer into a charge trap layer through an insulation layer formed of the threshold voltage switching material after applying a voltage pulse greater than the threshold voltage to the gate electrode layer.
    Type: Grant
    Filed: August 17, 2011
    Date of Patent: February 24, 2015
    Assignee: Korea University Research and Business Foundation
    Inventors: Taegeun Kim, Homyoung An
  • Publication number: 20140036585
    Abstract: The present invention relates to a nonvolatile memory device and to a method for manufacturing same. According to the present invention, the blocking insulation layer of a nonvolatile memory device having a typical SONOS structure is replaced with a threshold voltage switching material, which changes to a low resistance state only while a voltage greater than a threshold voltage is applied while maintaining a high resistance state under normal conditions and returning to the high resistance state when the applied voltage is removed. The present invention performs a program operation by injecting charges from a gate electrode layer into a charge trap layer through an insulation layer formed of the threshold voltage switching material after applying a voltage pulse greater than the threshold voltage to the gate electrode layer.
    Type: Application
    Filed: August 17, 2011
    Publication date: February 6, 2014
    Applicant: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
    Inventors: Taegeun Kim, Homyoung AN
  • Publication number: 20130207149
    Abstract: The present invention relates to a semiconductor light-emitting device having a two-stage photonic crystal pattern formed thereon, and to a method for manufacturing same. According to the present invention, a second photonic crystal pattern is formed inside a first photonic crystal pattern formed on a semiconductor layer or transparent electrode layer, in order to improve light extraction efficiency. Also, according to the present invention, in order to form a second fine nanoscale photonic crystal pattern in the first photonic crystal pattern, a nanosphere lithography process employing polymer beads is used, and a trapping layer made of a thermoplastic resin was used to conveniently form polymer beads in a single layer so as to eliminate the inconvenience of having to calculate and change process variables according to polymer bead sizes in traditional nanosphere lithography processes.
    Type: Application
    Filed: August 17, 2011
    Publication date: August 15, 2013
    Applicant: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
    Inventors: Taegeun Kim, Homyoung An, Jaein Sim
  • Patent number: 6802522
    Abstract: A tow hook assembly for mounting to a front end of a vehicle. The tow hook assembly includes a base plate for mounting to the vehicle, the base plate having a central aperture for aligning over an opening in a mounting base on the vehicle. A tow hook has a shaft and an expanded base, with the aperture in the base plate receiving the shaft, and the expanded base being larger than the aperture to prevent the tow hook from being pulled through the base plate. In response to a frontal impact, however, the tow hook is released from the base plate, the shaft traveling freely through the aperture and the opening in the mounting base, so that minimal force of impact is transferred from the tow hook to the vehicle.
    Type: Grant
    Filed: June 2, 2003
    Date of Patent: October 12, 2004
    Assignee: DaimlerChrysler Corporation
    Inventors: Sae U Park, Constantinos Sakatis, Homyoung Kim, Mingchao Guo