Patents by Inventor Hon-Chun Wang

Hon-Chun Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Self-alignment insulation structure
    Patent number: 8207596
    Abstract: An insulation structure is provided. The insulation structure includes a deep trench filled with silicon and disposed in a substrate, a first oxide layer serving as the insulation structure and disposed on the surface of the silicon in the deep trench, a first silicon layer disposed on the first oxide layer, a gate disposed on the first silicon layer and a shallow trench isolation adjacent to the deep trench.
    Type: Grant
    Filed: September 15, 2010
    Date of Patent: June 26, 2012
    Assignee: United Microelectronics Corp.
    Inventor: Hon-Chun Wang
  • SELF-ALIGNMENT INSULATION STRUCTURE
    Publication number: 20110001176
    Abstract: An insulation structure is provided. The insulation structure includes a deep trench filled with silicon and disposed in a substrate, a first oxide layer serving as the insulation structure and disposed on the surface of the silicon in the deep trench, a first silicon layer disposed on the first oxide layer, a gate disposed on the first silicon layer and a shallow trench isolation adjacent to the deep trench.
    Type: Application
    Filed: September 15, 2010
    Publication date: January 6, 2011
    Inventor: Hon-Chun Wang
  • Method for forming self-alignment insulation structure
    Patent number: 7816226
    Abstract: A method for forming a self-align insulation of a passing gate is disclosed. First, a substrate is provided. A deep trench filled with silicon material and a shallow trench isolation adjacent to the deep trench are formed in the substrate. A patterned pad oxide and a patterned hard mask are sequentially formed on the substrate. The patterned pad oxide and the patterned hard mask together define the opening of the deep trench. Then, an oxidation step is carried out to form a first oxide layer serving as the insulation of a passing gate on the top surface of the silicon material of the deep trench. Later, a first Si layer is formed to cover the first oxide layer. Afterwards, the hard mask is removed.
    Type: Grant
    Filed: May 15, 2008
    Date of Patent: October 19, 2010
    Assignee: United Microelectronics Corp.
    Inventor: Hon-Chun Wang
  • METHOD FOR FORMING SELF-ALIGNMENT INSULATION STRUCTURE
    Publication number: 20090283873
    Abstract: A method for forming a self-align insulation of a passing gate is disclosed. First, a substrate is provided. A deep trench filled with silicon material and a shallow trench isolation adjacent to the deep trench are formed in the substrate. A patterned pad oxide and a patterned hard mask are sequentially formed on the substrate. The patterned pad oxide and the patterned hard mask together define the opening of the deep trench. Then, an oxidation step is carried out to form a first oxide layer serving as the insulation of a passing gate on the top surface of the silicon material of the deep trench. Later, a first Si layer is formed to cover the first oxide layer. Afterwards, the hard mask is removed.
    Type: Application
    Filed: May 15, 2008
    Publication date: November 19, 2009
    Inventor: Hon-Chun Wang