Abstract: In some embodiments, a logic circuit is provided that has a plurality of gates with gate inputs. Also provided is one or more latch circuits coupled to the logic circuit to provide operational data when in an operational mode and to cause at least some of the gate inputs to be at values resulting in reduced leakage during a sleep mode. Additionally provided are embodiments of non-destructive latch circuits, which may be used to implement the latch circuits just discussed. Other embodiments are disclosed and/or claimed herein.

Abstract: A packaging substrate includes a carrier and an interposer. The carrier has opposite top and bottom surfaces. A recess is formed on the top surface and a plurality of first conductive terminals are formed on the recess. Further, a plurality of second conductive terminals are formed on the bottom surface of the carrier. The interposer is disposed in the recess and has opposite first and second surfaces and a plurality of conductive through vias penetrating the first and second surfaces. A first conductive pad is formed on an end of each of the conductive through vias exposed from the first surface, and a second conductive pad is formed on the other end of each of the conductive through vias exposed from the second surface and electrically connected to a corresponding one of the first conductive terminals. Compared with the prior art, the invention improves the product reliability.

Abstract: In some embodiments, a logic circuit is provided that has a plurality of gates with gate inputs. Also provided is one or more latch circuits coupled to the logic circuit to provide operational data when in an operational mode and to cause at least some of the gate inputs to be at values resulting in reduced leakage during a sleep mode. Additionally provided are embodiments of non-destructive latch circuits, which may be used to implement the latch circuits just discussed. Other embodiments are disclosed and/or claimed herein.

Abstract: In some embodiments, a logic circuit is provided that has a plurality of gates with gate inputs. Also provided is one or more latch circuits coupled to the logic circuit to provide operational data when in an operational mode and to cause at least some of the gate inputs to be at values resulting in reduced leakage during a sleep mode. Additionally provided are embodiments of non-destructive latch circuits, which may be used to implement the latch circuits just discussed. Other embodiments are disclosed and/or claimed herein.

Abstract: In some embodiments, a logic circuit is provided that has a plurality of gates with gate inputs. Also provided is one or more latch circuits coupled to the logic circuit to provide operational data when in an operational mode and to cause at least some of the gate inputs to be at values resulting in reduced leakage during a sleep mode. Additionally provided are embodiments of non-destructive latch circuits, which may be used to implement the latch circuits just discussed. Other embodiments are disclosed and/or claimed herein.

Abstract: An apparatus having a three-dimensional integrated circuit structure is described herein. The apparatus include an interposer for carrying a plurality of high and low-power chips. The high-power chips are attached and connected to one side of the interposer, while the low-power chips are attached and connected to the other side of the interposer. In generally, the high-power chips produce more heat than does the low-power chip during their operations. The interposer further include through silicon vias and redistribution layers for connecting the chips on both surfaces. In addition, the interposer assembly is attached and connected to a substrate layer, which is in turn attached and connected to a printed circuit board. In order to provide improve thermal management, the interposer surface carrying the high-power chips are oriented away from the circuit board. A heat spreader is attached to the back sides of the high-power chips for dissipating the heat.

Abstract: An optoelectronic apparatus is described herein, including a transmitter, a receiver, and an optical waveguide, all of which are embedded in a PCB. The transmitter includes a laser generator and other circuits for generating electrical and optical signals, which are transmitted through the waveguide to the receiver. The receiver includes circuits and detectors for detecting and converting the optical signals to electrical signals. The circuit and optical components of the transmitter and receiver are integrated in 3D hybrid chip sets where the chip components are stacked in a 3D structure. Because all of the circuit and optical components are embedded in the PCB, the apparatus is made very compact and suitable for implementation in portable products.

Abstract: In one embodiment, the present invention includes a method for receiving first and second data operands in a common execution unit and manipulating the operands responsive to an instruction to generate an output according to local control signals of a local controller of the execution unit. Various instruction types such as shuffle and shift operations may be performed in the common execution unit in a single cycle. Other embodiments are described and claimed.

Abstract: In one embodiment, the present invention includes a method for receiving first and second data operands in a common execution unit and manipulating the operands responsive to an instruction to generate an output according to local control signals of a local controller of the execution unit. Various instruction types such as shuffle and shift operations may be performed in the common execution unit in a single cycle. Other embodiments are described and claimed.

Abstract: This invention describes a method to test both auto-refresh and self refresh of an SDRAM. The method writes a logical zero in to a single cell on each word line using a write with auto-precharge and increments an internal counter with either auto-refresh or self refresh to select the row address. The test is performed using existing circuitry on the SDRAM, and when testing self refresh, the refresh cycle is exited shortly after a cell on a row has been written into so as to not run the entire refresh cycle and save test time. A test signature is formed by the logical zeros written into one cell along each word line. Comparing this signature with the signature that should exist provides an easy way to determine if there is a test error and where the error occurred.

Abstract: A power down system for regulated internal power supply in DRAM comprises a RAS control module, self-refresh clock control circuit, and a power down control circuit. The RAS control module responds with row address strobe signals to output a first power down control signal. While all the row address strobe signals, which denote states of the memory banks, are in a first condition of inactivity, the first power down control signal will inform the power down system to turn off a regulator in the DRAM under the first condition. The self-refresh clock control circuit responds with a self-refresh clock to output a second power down control signal. While the self-refresh clock is in a second condition of non-self-refresh mode, the second power down control signal will inform the power down system to turn off the regulator under the second condition.

Abstract: A semiconductor memory device with a function of equalizing voltages of dataline pair. After turning off the word line and before turning on the equalization means, the datalines are precharged and discharged to a supplied voltage and ground, respectively. Using the theory of uniform distribution of charges, the datalines are equalized into VCC/2, that is, a half of the source supply voltage. The interference on a weak voltage VCC/2 generator within the equalization means during the equalization mode is thus avoided. The equalization of voltages on the dataline pair can be achieved within a transient cycle. Complete data can thus be written or read before the next command is given.

Abstract: A dynamic precharge redundant circuit for a semiconductor memory device. A PMOS transistor, a fuse, a first, second and third inverters, a first switch and a second switch are applied. A source of the PMOS transistor is coupled to a voltage supply, while a gate of the PMOS transistor is to receive a precharge signal. The fuse has a ground terminal and a terminal coupled to the drain of the PMOS transistor of which the drain is further coupled to an input terminal of the first inverter. The fuse is also coupled to a column address signal. The first inverter has an output terminal coupled to an input terminal of the first switch. The second inverter has an input terminal coupled to an output terminal of the first switch and an output terminal coupled to an input terminal of the third inverter, so as to output a bit-switch control signal.

Abstract: A power down scheme for a regulated sense amplifier power in DRAM. The power-supply level voltage Vccsa of a sense amplifier is turned on only within a certain time duration, which has no relationship with the word line turn-on time. The power down scheme includes control logic gates and time delay circuits which can be triggered by two internal control signals from other control modules in order to generate a power-down control signal for the bit line sense amplifier.

Abstract: This invention describes a biasing scheme that reduces burn-in testing time as well as the number of cycles through the burn-in test for a semiconductor memory. The magnitude of a substrate back bias is reduced when a semiconductor memory device is taken into burn-in at a first value of an external applied voltage. When the memory device is brought out of burn-in, the substrate back bias is returned to the original operating level at a second value of the external applied voltage. The reduction of the substrate back bias allows for a higher external voltage to stress the semiconductor memory without forcing breakdown and results in a shorter test time. The burn-in test is entered at a higher magnitude of the external applied voltage than the voltage at which burn-in testing is exited. This helps to reduce the number of cycles through the burn-in test by providing a stronger external bias.

Abstract: An adder using a leading zero/one detector (LZD) circuit and method of use determine an exact normalization shift with fewer logic levels and number of gates, resulting in saving considerable execution time to improve not only the timing as well as to reduce the size of the logic implementing the adder. In addition, a parallel method to locate the most significant digit is disclosed. Such an LZD circuit and method may be incorporated in an integrated circuit, and the LZD circuit includes a propagation value generator for generating a propagation value from input signals representing operands; and a location value generator for generating the location value from the generated propagation value.

Abstract: An integrated circuit having a fast carry generation adder for adding together two input signals has an initial stage and two or more intermediate stages. The adder may also include a final stage. Each intermediate stage has a carry mux and these carry muxes are grouped together, for example, adjacent to the initial stage and adjacent to the first intermediate stage. By grouping the carry muxes together, for example, in a column below the initial stage, the fast carry generation adder may be both faster and smaller than conventional adders and may reduce or even eliminate the need for any buffering between successive carry muxes.

Abstract: An integrated circuit including a circuit for determining shift overflow in a binary digital circuit having an n-bit shift data and an m-bit shift amount. The device has a logic array for producing an n-bit output from the m-bit shift amount; a conversion circuit for selectively converting the sign of an n-bit shift data; and a combination of OR and AND logical gates for logically combining the selectively converted n-bit shift data and the n-bit output producing an overflow output.