Abstract: Described are chemical mechanical processing (CMP) compositions and related methods, including compositions and methods for polishing nickel phosphorus (NiP) surfaces for hard disk applications.

Abstract: Described are chemical mechanical processing (CMP) compositions and related methods, including compositions and methods for polishing nickel-containing substrate surfaces such as nickel phosphorus (NiP) surfaces for hard disk applications, wherein the compositions contain highly irregular-shaped fused silica abrasive particles.

Abstract: Chemical mechanical polishing (CMP) compositions and methods for planarizing a nickel phosphorus (NiP) substrate are described. A NiP CMP method comprises abrading a surface of the substrate with a CMP composition. The CMP composition comprises a colloidal silica abrasive suspended in an aqueous carrier having a pH of less than 2, and containing a primary oxidizing agent comprising hydrogen peroxide, a secondary oxidizing agent comprising a metal ion capable of reversible oxidation and reduction in the presence of NiP and hydrogen peroxide, a chelating agent, and glycine. The chelating agent comprises two or three carboxylic acid substituents capable of chelating to the metal ion of the secondary oxidizing agent.

Abstract: Described are chemical mechanical processing (CMP) compositions and related methods, including compositions and methods for polishing nickel-containing substrate surfaces such as nickel phosphorus (NiP) surfaces for hard disk applications, wherein the compositions contain highly irregular-shaped fused silica abrasive particles.

Abstract: Described are chemical mechanical processing (CMP) compositions and related methods, including compositions and methods for polishing nickel phosphorus (NiP) surfaces for hard disk applications.

Abstract: The invention provides a polishing composition that contains (a) ?-alumina particles that have an average particle size of about 250 nm to about 300 nm, (b) a per-type oxidizing agent, (c) a complexing agent, wherein the complexing agent is an amino acid or an organic acid, and (d) water. The invention also provides a method of polishing a substrate, especially a nickel-phosphorous substrate, with the polishing composition.

Abstract: The invention provides a chemical-mechanical polishing composition containing (a) an abrasive selected from wet-process silica, alpha alumina, fumed alumina, ceria, zirconia, titania, and combinations thereof, (b) an oxidation catalyst, (c) a non-transition metal sulfate salt, (d) a complexing agent, (e) hydrogen peroxide, (f) a nonionic surfactant, (g) an anionic surfactant, and (h) water. The polishing composition has a pH of about 1 to about 5, and the polishing composition is substantially free of a peroxydisulfate salt. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.

Abstract: The invention provides a chemical-mechanical polishing composition containing (a) an abrasive selected from wet-process silica, alpha alumina, fumed alumina, ceria, zirconia, titania, and combinations thereof, (b) an oxidation catalyst, (c) a non-transition metal sulfate salt, (d) a complexing agent, (e) hydrogen peroxide, (f) a nonionic surfactant, (g) an anionic surfactant, and (h) water. The polishing composition has a pH of about 1 to about 5, and the polishing composition is substantially free of a peroxydisulfate salt. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.

Abstract: The invention provides a chemical-mechanical polishing composition including (a) an abrasive comprising wet-process silica particles, (b) a water-soluble polymer, (c) an oxidizing agent, (d) a chelating agent, (e) a pH-adjusting agent, and (f) an aqueous carrier, wherein the pH of the polishing composition is about 1 to about 7. The invention also provides a method of polishing a substrate, especially a nickel-phosphorus substrate, with the polishing composition.

Abstract: The invention provides a chemical-mechanical polishing composition containing (a) abrasive particles, (b) a polymer, and (c) water, wherein (i) the polymer possesses an overall charge, (ii) the abrasive particles have a zeta potential Za measured in the absence of the polymer and the abrasive particles have a zeta potential Zb measured in the presence of the polymer, wherein the zeta potential Za is a numerical value that is the same sign as the overall charge of the polymer, and (iii) |zeta potential Zb|>|zeta potential Za|. The invention also provides a method of polishing a substrate with the polishing composition.

Abstract: The invention provides a chemical-mechanical polishing composition including (a) an abrasive comprising wet-process silica particles, (b) a water-soluble polymer, (c) an oxidizing agent, (d) a chelating agent, (e) a pH-adjusting agent, and (f) an aqueous carrier, wherein the pH of the polishing composition is about 1 to about 7. The invention also provides a method of polishing a substrate, especially a nickel-phosphorus substrate, with the polishing composition.

Abstract: Chemical mechanical polishing (CMP) compositions and methods for planarizing a nickel phosphorus (NiP) substrate are described. A NiP CMP method comprises abrading a surface of the substrate with a CMP composition. The CMP composition comprises a colloidal silica abrasive suspended in an aqueous carrier having a pH of less than 2, and containing a primary oxidizing agent comprising hydrogen peroxide, a secondary oxidizing agent comprising a metal ion capable of reversible oxidation and reduction in the presence of NiP and hydrogen peroxide, a chelating agent, and glycine. The chelating agent comprises two or three carboxylic acid substituents capable of chelating to the metal ion of the secondary oxidizing agent.

Abstract: The invention provides a polishing composition that contains (a) ?-alumina particles that have an average particle size of about 250 nm to about 300 nm, (b) a per-type oxidizing agent, (c) a complexing agent, wherein the complexing agent is an amino acid or an organic acid, and (d) water. The invention also provides a method of polishing a substrate, especially a nickel-phosphorous substrate, with the polishing composition.

Abstract: The invention provides a chemical-mechanical polishing composition containing (a) abrasive particles, (b) a polymer, and (c) water, wherein (i) the polymer possesses an overall charge, (ii) the abrasive particles have a zeta potential Za measured in the absence of the polymer and the abrasive particles have a zeta potential Zb measured in the presence of the polymer, wherein the zeta potential Za is a numerical value that is the same sign as the overall charge of the polymer, and (iii) |zeta potential Zb|>|zeta potential Za|. The invention also provides a method of polishing a substrate with the polishing composition.