Abstract: Provided are a receptacle connector configured to avoid damage to conductors of the receptacle connector. The receptacle connector includes a plurality of connection terminals, a mold structure which comprises a front part exposing each of the connection terminals and a support part disposed on a rear end of the front part and surrounding each of the connection terminals, and a shield which is disposed on the support part and comprises a conductive material, wherein the support part comprises a flat part which includes a surface along which the shield extends and a protruding part which protrudes from the surface of the flat part and is disposed in front of a front end of the shield. The protruding part is configured to avoid damage to conductors of the receptacle when a plug is mated to the receptacle.

Abstract: A semiconductor device includes an active pattern having sharp corners. The semiconductor device includes a peripheral circuit including a substrate, a resistor device in the substrate, and an active pattern on the substrate. When viewed in a plan view, the active pattern includes corners in a serpentine shape, and first and second shapes of the corners are different from each other.

Abstract: A display device includes a display panel; a metal plate and a filling member disposed on a same layer on a bottom surface of the display panel and that include different materials; a fingerprint sensor disposed on a bottom surface of the filling member and that overlaps the filling member; and a member-sensor bonding member disposed between the fingerprint sensor and the filling member and that bonds the fingerprint sensor to the filling member. At least a part of a side surface of the filling member and a side surface of the metal plate are spaced apart from each other with an air gap therebetween.

Abstract: A memory device and an electronic device is provided. The memory device may include a memory module including a module board and a memory connector located on one side of the module board, a first enclosure placed above the memory module and a second enclosure placed below the memory module, wherein the first enclosure includes a first main cover which covers upper faces of the module board and the memory connector, at least one clamping hole which penetrates the main cover at a position overlapping the memory connector, an inter-device fastening pillar protruding downward from a lower face of the first main cover, and a coupling hole which is located inside the inter-device fastening pillar on a plane and penetrates the inter-device fastening pillar and the main cover.

Abstract: The present invention relates to a color-changing sensor for gas detection and a method for manufacturing same and, more particularly, to a color-changing sensor that can be used for detecting hydrogen gas, in which when the sensor comes into contact with hydrogen gas, color conversion occurs so that it is possible to easily check the presence of hydrogen gas, and when the sensor is not in contact with hydrogen gas by removal of hydrogen gas or the like, the sensor may exhibit a reversible characteristic of being restored to an original color and an irreversible characteristic of not being restored to an original color.

Abstract: A semiconductor device include a substrate including a plurality of protrusions protruding from an upper surface thereof and arranged two-dimensionally in a first direction and a second direction intersecting each other, a first trench provided between the protrusions in the first direction, and a second trench provided between the protrusions in the second direction, a first device isolation layer filling the first trench, gate patterns disposed on the protrusions in the second direction, upper surfaces of the protrusions exposed at both sides of the gate patterns, respectively, and a second device isolation layer filling a space between the gate patterns in the second direction and the second trench, and each of the gate patterns has a first sidewall adjacent to the second trench and aligned with an inner wall of the second trench.

Abstract: A memory device and an electronic device is provided. The memory device may include a memory module including a module board and a memory connector located on one side of the module board, a first enclosure placed above the memory module and a second enclosure placed below the memory module, wherein the first enclosure includes a first main cover which covers upper faces of the module board and the memory connector, at least one clamping hole which penetrates the main cover at a position overlapping the memory connector, an inter-device fastening pillar protruding downward from a lower face of the first main cover, and a coupling hole which is located inside the inter-device fastening pillar on a plane and penetrates the inter-device fastening pillar and the main cover.

Abstract: A semiconductor device including: a first transistor which include a first gate stack on a substrate; and a second transistor which includes a second gate stack on the substrate, wherein the first gate stack includes a first ferroelectric material layer disposed on the substrate, a first work function layer disposed on the first ferroelectric material layer and a first upper gate electrode disposed on the first work function layer, wherein the second gate stack includes a second ferroelectric material layer disposed on the substrate, a second work function layer disposed on the second ferroelectric material layer and a second upper gate electrode disposed on the second work function layer, wherein the first work function layer includes the same material as the second work function layer, and wherein an effective work function of the first gate stack is different from an effective work function of the second gate stack.

Abstract: A super-steep switching device and an inverter device using the same are disclosed. The super-steep switching device includes a semiconductor channel disposed on a substrate and made of a semiconductor material having impact ionization characteristic; a source electrode and a drain electrode in contact with the semiconductor channel, wherein the source electrode and the drain electrode are disposed on the substrate and are spaced apart from each other; and a gate electrode disposed on the semiconductor channel so as to overlap only a portion of the semiconductor channel, wherein a top surface of the semiconductor channel includes a first area overlapping the gate electrode, and a second area non-overlapping the gate electrode, wherein a ratio of a length of the first area and a length of the second area is in a range of 1:0.1 to 0.4.

Abstract: A filtering panel includes a molding layer part; a pattern layer part having an incident surface through which light emitted from a light source and viewing light transmitted to an observer enter, and an accommodation surface which is the reverse surface of the incident surface, wherein the molding layer part is stacked on the incident surface so as to be adjacent thereto, and the pattern layer part adjusts the optical paths of the emitted light and the viewing light; and a filtering layer part formed on a lower incident surface of the pattern layer part having the incident surface of the viewing light that enters from a lower region below a horizontal reference line, wherein the reflectivity of the visible light in the viewing light incident on the lower region is made greater than that of an upper region above the reference line by means of mirror reflection.

Abstract: Provided is a capacitive gas sensor. The capacitive gas sensor comprises a sensitive material for adsorbing and desorbing a target gas, an upper electrode surrounding the sensitive material, a lower electrode facing the upper electrode, and a porous structure disposed between the upper electrode and the lower electrode, wherein the capacitance of the sensitive material changes as the sensitive material adsorbs and desorbs the target gas.

Abstract: There is provided an IV flow regulator, which includes an upper lever; a lower lever which is disposed below the upper lever and regulates the flow rate of the IV by a regulation operation of rotating by facing the upper lever; a cover fastened to the lower lever; and switching restraint unit which switches a restraint state in which the cover and the lower lever are mutually restrained to enable the regulation operation and a free state in which the cover and the lower lever are not mutually restrained to disable the regulation operation, according to a relative position of the cover and the lower lever.

Abstract: A thermal dissipation composite material comprising: a matrix including a polymer material; and composite particles distributed in the matrix, wherein the composite particles include a filler, and a thermally conductive material coated on the surface of the filler by an inorganic coating layer, and wherein the plurality of thermally conductive materials coated by the inorganic coating layer are connected to each other on the surfaces of the plurality of composite particles so as to establish a heat transfer network.

Abstract: A method for preparing an anion adsorbent may be provided, which comprises the steps of: mixing at least two metal salts with each other, thereby forming a stack structure in which cationic compound layers and anionic compound layers containing anions and water of crystallization are alternately stacked on one another; performing a first heat treatment on the stack structure to expand between the cationic compound layers, thereby preparing a preliminary anion adsorbent; and performing a second heat treatment on the preliminary anion adsorbent to remove the anions and the water of crystallization from the anionic compound layers while allowing at least one of the anions to remain, thereby preparing the anion adsorbent.

Abstract: A method for preparing an anion adsorbent may be provided, which comprises the steps of: mixing at least two metal salts with each other, thereby forming a stack structure in which cationic compound layers and anionic compound layers containing anions and water of crystallization are alternately stacked on one another; performing a first heat treatment on the stack structure to expand between the cationic compound layers, thereby preparing a preliminary anion adsorbent; and performing a second heat treatment on the preliminary anion adsorbent to remove the anions and the water of crystallization from the anionic compound layers while allowing at least one of the anions to remain, thereby preparing the anion adsorbent.

Abstract: The present Invention is to provide a novel strain, Candida magnoliae (KCCM-10252) producing mannitol isolated from the fermentation sludge collected from a xylitol manufacturing company, and further a method for manufacturing mannitol with high yield and high productivity by optimizing various culture conditions and medium composition using the new strain, Candida magnoliae.