Abstract: An apparatus and method for controlled cleaving is presented. Embodiments of the present invention include an apparatus for cleaving a substrate comprising a bottom shell coupled to a hinge mechanism, a top shell coupled to the hinge mechanism, a plurality of o-rings or suction cups coupled to the top and bottom shells for providing a suction force sufficient to exert a tensile force to the top and bottom of a substrate, a compliant member for sealing a portion of a grove edge of a substrate and for maintaining a pressure inside a volume formed between the groove edge and the groove edge of the substrate, a gas port for supplying gas to the volume, and a height adjustment mechanism coupled to the top shell and the bottom shell for separating the top shell from the bottom shell.

Abstract: A showerhead assembly for distributing gases within a processing chamber is provided. In one embodiment, the showerhead assembly includes a cylindrical member having a faceplate coupled thereto. The cylindrical member has an outwardly extending first flange at a first end. The faceplate is coupled to a second end of the cylindrical member and has a plurality of holes formed though a center region of the faceplate. The joint between the cylindrical member and the faceplate allow for relative movement when subjected to thermal stresses. In another embodiment, at least one clamp member retains the faceplate to the second end of the cylindrical member.

Abstract: A showerhead assembly for distributing gases within a processing chamber is provided. In one embodiment, the showerhead assembly includes a cylindrical member having a faceplate coupled thereto. The cylindrical member has an outwardly extending first flange at a first end. The faceplate is coupled to a second end of the cylindrical member and has a plurality of holes formed though a center region of the faceplate. The joint between the cylindrical member and the faceplate allow for relative movement when subjected to thermal stresses. In another embodiment, at least one clamp member retains the faceplate to the second end of the cylindrical member.

Abstract: In one aspect of the present invention there is provided a method of improving the uniformity of a titanium nitride film, comprising the steps of introducing TiCl4 gas to a chemical vapor deposition chamber from the center of a chamber lid wherein said chamber lid has a blocker plate; introducing NH3 gas to the chemical vapor deposition chamber simultaneously from both the center and edge of the chamber lid thereby distributing the TiCl4 gas and the NH3 gas uniformly across a surface of a wafer; and depositing a titanium nitride film by chemical vapor deposition onto the surface of the wafer where the uniform distribution of the TiCl4 gas and the NH3 gas yields a titanium nitride film with improved uniformity. The chamber is provided with two pumping channels positioned on either side of the chamber.

Abstract: A substrate support assembly for supporting a substrate during processing is provided. In one embodiment, a support assembly includes a top ceramic plate having a first side, a bottom ceramic plate having a first side and an embedded electrode, the first side of the bottom plate fused to the first side of the top plate defining a channel therebetween. In another embodiment, a support assembly includes a first plate having a first side and second side. A ring is disposed on the first side. A stepped surface is formed on the first side radially inward of the ring. A second plate is connected to the second side of the first plate.