Patents by Inventor Hong-Chang Dai

Hong-Chang Dai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating a sub-half micron MOSFET device with insulator filled shallow trenches planarized via use of negative photoresist and de-focus exposure
    Patent number: 5691215
    Abstract: A process for globally planarizing the insulator used to fill narrow and wide shallow trenches, used in a MOSFET device, structure, has been developed. The process features smoothing the topography that exists after the insulator filling of narrow and shallow trenches, by creating photoresist plugs, only in the depressed topography regions. This is accomplished using a negative photoresist layer, a de-focus exposure, and the identical mask used to create the shallow trench pattern in a positive photoresist layer. A RIE procedure, with a 1:1 etch selectivity, is used to complete the planarization process.
    Type: Grant
    Filed: August 26, 1996
    Date of Patent: November 25, 1997
    Assignee: Industrial Technology Research Institute
    Inventors: Chang-Ming Dai, Hong-Chang Dai, Shih-Chang Tai