Abstract: This invention discloses a semiconductor power device disposed in a semiconductor substrate. The semiconductor power device comprises a plurality of trenches each having a trench endpoint with an endpoint sidewall perpendicular to a longitudinal direction of the trench and extends vertically downward from a top surface to a trench bottom surface. The semiconductor power device further includes a trench bottom dopant region disposed below the trench bottom surface and a sidewall dopant region disposed along the endpoint sidewall wherein the sidewall dopant region extends vertically downward along the endpoint sidewall of the trench to reach the trench bottom dopant region and pick-up the trench bottom dopant region to the top surface of the semiconductor substrate.

Abstract: A plurality of gate trenches is formed into a semiconductor substrate in an active cell region. One or more other trenches are formed in a different region. Each gate trench has a first conductive material in lower portions and a second conductive material in upper portions. In the gate trenches, a first insulating layer separates the first conductive material from the substrate, a second insulating layer separates the second conductive material from the substrate and a third insulating material separates the first and second conductive materials. The other trenches contain part of the first conductive material in a half-U shape in lower portions and part of the second conductive material in upper portions. In the other trenches, the third insulating layer separates the first and second conductive materials. The first insulating layer is thicker than the third insulating layer, and the third insulating layer is thicker than the second.

Abstract: A semiconductor device, comprising: a substrate; an active gate trench in the substrate; a source polysilicon pickup trench in the substrate; a polysilicon electrode disposed in the source polysilicon pickup trench; a gate pickup trench in the substrate; a first conductive region and a second conductive region disposed in the gate pickup trench, the first conductive region and the second conductive region being separated by oxide, wherein at least a portion of the oxide surrounding the first conductive region in the gate pickup trench is thicker than at least a portion of the oxide under the second conductive region; and a body region in the substrate.

Abstract: A TFT array substrate which includes a plurality of pixels arranged in a matrix, has each pixel including sub-pixels in a 2×2 matrix. Two data lines are between neighboring columns of the sub-pixels and scan line is arranged between neighboring rows of the sub-pixels. The sub-pixels in same row can be electrically coupled to one scan line. The sub-pixels for the same color in one same column can be electrically coupled to the neighboring data line. The sub-pixels configured to display another same color in the same column can be electrically coupled to another neighboring same data line. Each two adjacent sub-pixels displaying a same color have opposite polarities.

Abstract: Semiconductor devices includes a thin epitaxial layer (nanotube) formed on sidewalls of mesas formed in a semiconductor layer. In one embodiment, a semiconductor device includes a first semiconductor layer, a second semiconductor layer formed thereon and of the opposite conductivity type, and a first epitaxial layer formed on mesas of the second semiconductor layer. An electric field along a length of the first epitaxial layer is uniformly distributed.

Abstract: Embodiments of the present disclosure provide a contact structure in a split-gate trench transistor device for electrically connecting the top electrode to the bottom electrode inside the trench. The transistor device comprises a semiconductor substrate and one or more trenches formed in the semiconductor substrate. The trenches are lined with insulating materials along the sidewalls inside the trenches. Each trench has a bottom electrode in lower portions of the trench and a top electrode in its upper portions. The bottom electrode and the top electrode are separated by an insulating material. A contact structure filled with conductive materials is formed in each trench in an area outside of an active region of the device to connect the top electrode and the bottom electrode. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure.

Abstract: A semiconductor device includes a substrate, an active gate trench in the substrate; a source polysilicon pickup trench in the substrate; a polysilicon electrode disposed in the source polysilicon pickup trench; and a body region in the substrate. The top surface of the polysilicon electrode is below the bottom of the body region.

Abstract: A machine navigation system includes a monitoring mechanism for monitoring configuration of an implement movable between configurations relative to a frame such that a center of mass of the machine moves in response to the moving of the implement. A second monitoring mechanism monitors track speed in the machine. A location of an origin of the track speed varies based upon location of the center of mass. A control unit is coupled with the monitoring mechanisms and structured to determine a control term for compensating for movement of a reference location on the machine relative to the track speed origin. The control unit further calculates velocity based on the track speed and the compensatory control term.

Abstract: A machine navigation system includes a monitoring mechanism for monitoring configuration of an implement movable between configurations relative to a frame such that a center of mass of the machine moves in response to the moving of the implement. A second monitoring mechanism monitors track speed in the machine. A location of an origin of the track speed varies based upon location of the center of mass. A control unit is coupled with the monitoring mechanisms and structured to determine a control term for compensating for movement of a reference location on the machine relative to the track speed origin. The control unit further calculates velocity based on the track speed and the compensatory control term.

Abstract: A plurality of gate trenches is formed into a semiconductor substrate in an active cell region. One or more other trenches are formed in a different region. Each gate trench has a first conductive material in lower portions and a second conductive material in upper portions. In the gate trenches, a first insulating layer separates the first conductive material from the substrate, a second insulating layer separates the second conductive material from the substrate and a third insulating material separates the first and second conductive materials. The other trenches contain part of the first conductive material in a half-U shape in lower portions and part of the second conductive material in upper portions. In the other trenches, the third insulating layer separates the first and second conductive materials. The first insulating layer is thicker than the third insulating layer, and the third insulating layer is thicker than the second.

Abstract: An apparatus is provided to extract radioactive solid particles. An extracting nozzle is used to extract radioactive solid particles. Then, a separator is used to separate out the radioactive solid particles into a storing container. The radioactive solid particles are avoided from entering a suction pump. Not only the suction pump is not polluted, but also the secondary waste is not increased. By designing a falling inlet of a suction channel at a position having a specific height, the amount of the radioactive solid particles being extracted is under control. There is a radiation-protection device outside of the storing container to minimize radiation dose. The separator and the storing container can be rapidly detached by remote operation, so that operators are avoided from receiving over-dose radiation. Hence, the present invention improves the level of technology and automation for handling radioactive waste.

Abstract: Semiconductor devices are formed using a thin epitaxial layer (nanotube) formed on sidewalls of dielectric-filled trenches. In one embodiment, a method for forming a semiconductor device includes forming a first epitaxial layer on sidewalls of trenches and forming second epitaxial layer on the first epitaxial layer where charges in the doped regions along the sidewalls of the first and second trenches achieve charge balance in operation. In another embodiment, the semiconductor device includes a termination structure including an array of termination cells.

Abstract: In one aspect, the present invention relates to a mammalian cell-based high-throughput assay for the profiling and screening of human epithelial sodium channel (hENaC) cloned from a human kidney c-DNA library and is also expressed in other tissues including human taste tissue. The present invention further relates to amphibian oocyte-based medium-throughput electrophysiological assays for identifying human ENaC modulators, preferably ENaC enhancers. Compounds that modulate ENaC function in a cell-based ENaC assay are expected to affect salty taste in humans. The assays described herein have advantages over existing cellular expression systems. In the case of mammalian cells, such assays can be run in standard 96 or 384 well culture plates in high-throughput mode with enhanced assay results being achieved by the use of a compound that inhibits ENaC function, preferably an amiloride derivative such as Phenamil.

Abstract: A motion determination system is disclosed. The system may calculate one or more visual-odometry outputs. The system may determine a plurality of figure of merits, wherein each of the plurality of figure of merits is associated with one of a plurality of parameters affecting the calculation of the one or more visual-odometry outputs, and each of the plurality of figure of merits is indicative of an accuracy of the visual-odometry outputs. The system may calculate a combined figure of merit based on the plurality of figure of merits. The system may calculate an error estimate for the one or more visual-odometry outputs based on the combined figure of merit.

Abstract: A power MOSFET device including a semiconductor layer, an active trench formed in the semiconductor layer and housing a dual oxide thickness trench gate structure where a bottom of the trench gate is isolated from a bottom of the active trench by a liner oxide layer having a first thickness, and a termination trench formed in the semiconductor layer apart from the active trench and housing a dual oxide thickness trench gate structure where a bottom of the trench gate is isolated from a bottom of the termination trench by the liner oxide layer having a second thickness. In one embodiment, the second thickness is greater than the first thickness. In another embodiment, the trench gate in each of the active trench and the termination trench is formed as a single polysilicon layer.

Abstract: Provided are an image magnification apparatus and method for three-dimensional display images. A multi-view image magnification apparatus includes: a region designation detection unit for detecting detection regions corresponding to the magnification regions of three-dimensional display images from original view images; a magnification ratio determination unit for determining the magnification ratios of the magnification regions; and a partial multiplexing unit for multiplexing non-detection regions except for the detection regions of the original view images according to a predetermined resolution and multiplexing the detection regions according the resolution which is different from the resolution of the non-detection regions on the basis of the magnification ratios. The present invention can magnify the images without lowering the resolution in a three-dimensional display.

Abstract: There are provided a method and apparatus for controlling an electronic device. The apparatus for controlling an electronic device includes a marker recognition unit configured to recognize the marker of the electronic device and a control unit configured to perform communication with the electronic device based on the marker and control the electronic device using a Graphic User Interface (GUI) program received from the electronic device.

Abstract: A plurality of gate trenches is formed into a semiconductor substrate in an active cell region. One or more other trenches are formed in a different region. Each gate trench has a first conductive material in lower portions and a second conductive material in upper portions. In the gate trenches, a first insulating layer separates the first conductive material from the substrate, a second insulating layer separates the second conductive material from the substrate and a third insulating material separates the first and second conductive materials. The other trenches contain part of the first conductive material in a half-U shape in lower portions and part of the second conductive material in upper portions. In the other trenches, the third insulating layer separates the first and second conductive materials. The first insulating layer is thicker than the third insulating layer, and the third insulating layer is thicker than the second.

Abstract: A TFT array substrate which includes a plurality of pixels arranged in a matrix, has each pixel including sub-pixels in a 2×2 matrix. Two data lines are between neighboring columns of the sub-pixels and scan line is arranged between neighboring rows of the sub-pixels. The sub-pixels in same row can be electrically coupled to one scan line. The sub-pixels for the same color in one same column can be electrically coupled to the neighboring data line. The sub-pixels configured to display another same color in the same column can be electrically coupled to another neighboring same data line. Each two adjacent sub-pixels displaying a same color have opposite polarities.

Abstract: An apparatus is provided to extract radioactive solid particles. An extracting nozzle is used to extract radioactive solid particles. Then, a separator is used to separate out the radioactive solid particles into a storing container. The radioactive solid particles are avoided from entering a suction pump. Not only the suction pump is not polluted, but also the secondary waste is not increased. By designing a falling inlet of a suction channel at a position having a specific height, the amount of the radioactive solid particles being extracted is under control. There is a radiation-protection device outside of the storing container to minimize radiation dose. The separator and the storing container can be rapidly detached by remote operation, so that operators are avoided from receiving over-dose radiation. Hence, the present invention improves the level of technology and automation for handling radioactive waste.