Abstract: A method of manufacturing a semiconductor device includes at least the following steps. A protrusion is formed in a substrate by an anisotropic etch process, wherein a sidewall of the protrusion is inclined. A recess is formed on the sidewall of the protrusion by an isotropic etch process, wherein during the isotropic etch process, a by-product covers a first portion of the sidewall of the protrusion while exposing a second portion of the sidewall of the protrusion, so that the recess is formed between the first portion and the second portion of the sidewall.

Abstract: Disclosed herein is a method for encoding an immersive image. The method includes detecting a non-diffuse surface in a first texture image of a first view, generating an additional texture image from the first texture image based on the detected non-diffuse surface, performing pruning on the additional texture image based on a second texture image of a second view, generating a texture atlas based on the pruned additional texture image, and encoding the texture atlas.

Abstract: A method includes forming a semiconductor substrate, forming hard mask layers (HMs) over the semiconductor substrate, forming first mandrels over the HMs, forming second mandrels along sidewalls of the first mandrels, forming a protective layer over the first mandrels and the second mandrels, removing a portion of the protective layer to expose portions of the first and the second mandrels, removing the exposed portions of the second mandrels with respect to the exposed portions of the first mandrels, removing remaining portions of the protective layer to expose remaining portions of the first and second mandrels, where the exposed portions of the first mandrels and the remaining portions of the first and second mandrels form a mandrel structure, patterning the HMs using the mandrel structure as an etching mask, and patterning the semiconductor substrate to form a fin structure using the patterned HMs as an etching mask.

Abstract: An image encoding method according to the present disclosure may include generating an atlas based on a plurality of viewpoint images; encoding the atlas; and encoding metadata for the atlas. In this case, the metadata may include data of a patch packed in the atlas, and the patch data may include type information of an entity corresponding to a patch.

Abstract: A semiconductor device includes a first channel region, a second channel region, and a first insulating fin, the first insulating fin being interposed between the first channel region and the second channel region. The first insulating fin includes a lower portion and an upper portion. The lower portion includes a fill material. The upper portion includes a first dielectric layer on the lower portion, the first dielectric layer being a first dielectric material, a first capping layer on the first dielectric layer, the first capping layer being a second dielectric material, the second dielectric material being different than the first dielectric material, and a second dielectric layer on the first capping layer, the second dielectric layer being the first dielectric material.

Abstract: An analysis method configured to analyze original signals on an auxiliary channel of DisplayPort between a transmitter and at least one receiver, includes: receiving a first original signal of the original signals; dividing the first original signal to obtain a DPCD address and a first data; storing the first data according to the DPCD address; determining whether the first data is a redundant signal; when the first data is not the redundant signal, analyzing the first data; and displaying a topology of the at least one receiver. The operation of analyzing the first data includes generating the topology of the at least one receiver.

Abstract: A method of processing an immersive video includes classifying view images into a basic image and an additional image, performing pruning with respect to view images by referring to a result of classification, generating atlases based on a result of pruning, generating a merged atlas by merging the atlases into one atlas, and generating configuration information of the merged atlas.

Abstract: An image encoding method according to the present disclosure may include generating an atlas based on at least one two-dimensional or three-dimensional image; and encoding the atlas and metadata for the atlas. In this case, the metadata may include information about a patch packed in the atlas, and the patch information may include information about a three-dimensional point projected on a two-dimensional patch.

Abstract: A method includes forming a semiconductor substrate, forming hard mask layers (HMs) over the semiconductor substrate, forming first mandrels over the HMs, forming second mandrels along sidewalls of the first mandrels, forming a protective layer over the first mandrels and the second mandrels, removing a portion of the protective layer to expose portions of the first and the second mandrels, removing the exposed portions of the second mandrels with respect to the exposed portions of the first mandrels, removing remaining portions of the protective layer to expose remaining portions of the first and second mandrels, where the exposed portions of the first mandrels and the remaining portions of the first and second mandrels form a mandrel structure, patterning the HMs using the mandrel structure as an etching mask, and patterning the semiconductor substrate to form a fin structure using the patterned HMs as an etching mask.

Abstract: A semiconductor device includes a first channel region, a second channel region, and a first insulating fin, the first insulating fin being interposed between the first channel region and the second channel region. The first insulating fin includes a lower portion and an upper portion. The lower portion includes a fill material. The upper portion includes a first dielectric layer on the lower portion, the first dielectric layer being a first dielectric material, a first capping layer on the first dielectric layer, the first capping layer being a second dielectric material, the second dielectric material being different than the first dielectric material, and a second dielectric layer on the first capping layer, the second dielectric layer being the first dielectric material.

Abstract: A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer, a gate structure, and a field plate. The second nitride semiconductor layer is formed on a first surface of the first nitride semiconductor layer. The gate structure is disposed on the second nitride semiconductor layer. The field plate includes a first portion and a second portion connected to the first portion. The first portion has a first surface substantially in parallel to the first surface of the first nitride semiconductor layer, and a second surface adjacent to the first surface of the first portion. The first surface of the first portion of the field plate and the second surface of the first portion of the field plate define a first angle of about 90°.

Abstract: A method includes forming a first fin structure and a second fin structure protruding from a substrate, forming a dielectric fin between the first fin structure and the second fin structure, recessing the dielectric fin to form a trench between the first fin structure and the second fin structure, and depositing a first dielectric layer on sidewall surfaces of the trench and on a top surface of the recessed dielectric fin. After the depositing the first dielectric layer, a second dielectric layer is deposited in the trench. The method further includes depositing a third dielectric layer to cap the second dielectric layer in the trench, and forming a gate structure on the first fin structure, the second fin structure, and the third dielectric layer.

Abstract: A semiconductor device includes a pair of fin structures on a semiconductor substrate, each including a vertically stacked plurality of channel layers, a dielectric fin extending in parallel to and between the fin structures, and a gate structure on and extending perpendicularly to the fin structures, the gate structure engaging with the plurality of channel layers. The dielectric fin includes a fin bottom and a fin top over the fin bottom. The fin bottom has a top surface extending above a bottom surface of a topmost channel layer. The fin top includes a core and a shell, the core having a first dielectric material, the shell surrounding the core and having a second dielectric material different from the first dielectric material.

Abstract: Some embodiments of the disclosure provide a method for fabricating a semiconductor device. The method comprises: providing a semiconductor stack comprising a substrate, a first nitride semiconductor layer on the substrate, and a second nitride semiconductor layer on the first nitride semiconductor layer, wherein the second nitride semiconductor layer having a bandgap greater than that of the first nitride semiconductor layer; forming a first contact on the first nitride semiconductor layer; forming a spacer attached to a sidewall of the first contact; and forming a second contact after the spacer is formed.

Abstract: The present application discloses a method and a device for indicating a path loss reference signal, a terminal, a base station and a storage medium. The method for indicating a path loss reference signal includes: receiving an uplink transmission control signaling transmitted by a base station; determining a spatial domain relationship parameter of uplink transmission according to the uplink transmission control signaling; and determining a path loss reference signal used for uplink transmission power control according to the spatial domain relationship parameter of uplink transmission. According to the technical solutions provided by the embodiments, the path loss reference signal is determined according to the spatial domain relationship parameter, which saves signaling overhead, and improves configuration flexibility of a path loss reference signal used for uplink transmission power control.

Abstract: Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first dielectric layer and a second dielectric layer. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap greater than that of the first nitride semiconductor layer. The first dielectric layer is disposed on the second nitride semiconductor layer. The second dielectric layer is disposed on the first dielectric layer. The second dielectric layer includes a first portion and a second portion separated from the first portion by a trench, wherein the trench terminates at an upper surface of the first dielectric layer.

Abstract: An integrated circuit (IC) comprising an enhanced passivation scheme for pad openings and trenches is provided. In some embodiments, an interlayer dielectric (ILD) layer covers a substrate and at least partially defines a trench. The trench extends through the ILD layer from a top of the ILD layer to the substrate. A conductive pad overlies the ILD layer. A first passivation layer overlies the ILD layer and the conductive pad, and further defines a pad opening overlying the conductive pad. A second passivation layer overlies the ILD layer, the conductive pad, and the first passivation layer, and further lines sidewalls of the first passivation layer in the pad opening and sidewalls of the ILD layer in the trench. Further, the second passivation layer has a low permeability for moisture or vapor relative to the ILD layer.

Abstract: Methods and endpoint nodes and controllers are disclosed for mutual authentication and key exchange. In an embodiment, physical unclonable function circuits on the endpoint nodes are used in combination with key masks to allow mutual authentication and key exchange between the endpoint nodes.

Abstract: Some embodiments of the disclosure provide a semiconductor device. The semiconductor device comprises: a substrate; a first nitride semiconductor layer disposed on the substrate; a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a bandgap greater than that of the first nitride semiconductor layer; an ohmic contact disposed on the first nitride semiconductor layer; and a spacer disposed adjacent to a sidewall of the ohmic contact.

Abstract: A method for sharing a storage device among multiple processors and an associated electronic device are provided. The method includes: controlling a first processor and a second processor to operate in an access mode and a detection mode, respectively; in response to the first processor operating in the access mode, utilizing the first processor to control a logic value of a busy signal, to indicate that the first processor has permission to access the storage device; in response to a first predetermined condition, controlling the first processor to enter the detection mode from the access mode; in response to a second predetermined condition, controlling the second processor to enter the access mode from the detection mode; and in response to the second processor operating in the access mode, utilizing the second processor to control the logic value of the busy signal, to indicate that the second processor has the permission.