Abstract: An epitaxial structure includes a substrate, a first buffer layer, a second buffer layer, and a channel layer, wherein the first buffer layer is located on a top of the substrate and includes a first portion. The first portion includes a nitride, which is ternary and above, and an aluminum atom concentration of the first portion is less than or equal to 25 at %. The first portion has an element doping, wherein a doping concentration of the element doping of the first portion is greater than or equal to 1×1018 cm?3. The second buffer layer is located on a top of the first buffer layer. The second buffer layer is provided without aluminum and has an element doping. The channel layer is located on a top of the second buffer layer.

Abstract: A high electron mobility transistor epitaxial structure includes a substrate, a nucleation layer, a buffer layer, a first nitride layer, a second nitride layer, a channel layer, and a barrier layer. The nucleation layer is located above the substrate. The buffer layer is located above the nucleation layer. The first nitride layer is located above the buffer layer and is in contact with the buffer layer. The second nitride layer is located above the first nitride layer and is in contact with the first nitride layer. A film thickness of the first nitride layer is less than a film thickness of the second nitride layer. The second nitride layer is carbon doped. A carbon concentration of the first nitride layer is less than a carbon concentration of the second nitride layer. The channel layer is located above the second nitride layer.

Abstract: A heterostructure, includes: a substrate; and a buffer layer that includes a plurality of layers having a composition AlxInyGa1-x-yN, where x?1 and 0?y?1; wherein the buffer layer has a first region that includes at least two layers, a second region that includes at least two layers, and a third region that includes at least two layers. The aluminum content varies continuously throughout a thickness of at least one of the layers.

Abstract: A login page of an online service is received in a user computer. False credentials, such as a false user identifier (ID) and a false password, are entered into the login page to login to the online service. The login page is classified as phishing when the online service does not serve a legitimate login-fail page in response to the entry of the false credentials in the login page.

Abstract: A login page of an online service is received in a user computer. False credentials, such as a false user identifier (ID) and a false password, are entered into the login page to login to the online service. The login page is classified as phishing when the online service does not serve a legitimate login-fail page in response to the entry of the false credentials in the login page.

Abstract: A login page of an online service is received in a user computer. False credentials, such as a false user identifier (ID) and a false password, are entered into the login page to login to the online service. The login page is classified as phishing when the online service does not serve a legitimate login-fail page in response to the entry of the false credentials in the login page.

Abstract: A login page of an online service is received in a user computer. False credentials, such as a false user identifier (ID) and a false password, are entered into the login page to login to the online service. The login page is classified as phishing when the online service does not serve a legitimate login-fail page in response to the entry of the false credentials in the login page.