Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a first source/drain (S/D) region disposed over a substrate, a second S/D region disposed over the substrate, a dielectric wall disposed between the first and second S/D regions, a first conductive contact disposed over and electrically connected to the first S/D region, a second conductive contact disposed over and electrically connected to the second S/D region, and a first dielectric material in contact with the dielectric wall. The first dielectric material has a top surface located at a first level between a top surface of the first conductive contact and a bottom surface of the first conductive contact, and the first dielectric material extends from the first level to a second level located below the bottom surface of the first conductive contact.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes channel structures vertically stacked over a substrate and a source/drain structure laterally attached to the channel structures in the first direction. The semiconductor structure also includes a dielectric wall structure laterally attached to the channel structures in the second direction. The second direction is different from the first direction. In addition, the dielectric wall structure includes a bottom portion and a cap layer formed over the bottom portion. The semiconductor structure also includes an isolation feature vertically overlapping the cap layer of the dielectric wall structure and a gate structure formed around the channel structures and covering a sidewall of the isolation feature.

Abstract: Disclosed is an electronic device having a display region and a peripheral region adjacent to the display region. The electronic device includes a first electrode disposed in the display region, a second electrode disposed in the display region, a circuit module disposed in the peripheral region, a first electrical trace, and a second electrical trace electrically insulated from the first electrical trace. The circuit module is electrically connected to the first electrode through the first electrical trace and provides a first driving voltage to the first electrical trace. The circuit module is electrically connected to the second electrode through the second electrical trace and provides a second driving voltage to the second electrical trace, and the first driving voltage is different from the second driving voltage. In a top view, the first electrical trace at least partially overlaps the second electrical trace.

Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes first and second gate structures formed over a semiconductor substrate and a multilayer gate isolation structure separating the first gate structure from the second gate structure. The multilayer gate isolation structure includes a first insulating feature adjacent to upper portions of the first gate structure and the second gate structure, and a second insulating feature separating the semiconductor substrate from the first insulating feature. The material of the second insulating feature is different than that of the first insulating feature. The second insulating feature has a lower dielectric constant or lower etch resistance than the first insulating feature.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first gate stack over a substrate. The first gate stack includes a first gate electrode and a dielectric layer between the first gate electrode and the substrate, and the first gate electrode has a void. The method includes oxidizing a side portion of the first gate electrode to form an oxide layer over the first gate electrode. The oxide layer fills the void.

Abstract: The disclosure relates to a linear actuator including a base, a linear motor, a load cell and a rotary motor. The linear motor is disposed on the base and includes a fixed coil module and a movable magnetic backplane. The fixed coil module is fixed on the base, and the movable magnetic backplane is configured to slide relative to the fixed coil module along a first direction. The rotary motor is rotated around a central axis in parallel with the first direction. The load cell has two opposite sides parallel to the first direction, respectively. The movable magnetic backplane of the linear motor and the rotary motor are connected to the two opposite sides of the load cell, respectively. The load cell is subjected to a force applied thereto by the rotary motor and parallel to the first direction, and configured to convert the force into an electrical signal.

Abstract: A p-GaN high electron mobility transistor is disclosed. The p-GaN high electron mobility transistor includes a substrate, a channel layer located on the substrate, a supply layer laminated on the channel layer, and a doped layer laminated on the supply layer. A doping concentration of the doped layer is gradually distributed, in which the doping concentration in a first doped region close to the supply layer is lower than a doping concentration in a second doped region distant from the supply layer. A gate electrode is located on the doped layer. A source electrode and a drain electrode are respectively electrically connected to the channel layer and the supply layer.

Abstract: A GaN high electron mobility transistor is disclosed. The GaN high electron mobility transistor includes a substrate, a buffer layer located on the substrate, a barrier layer laminated on the buffer layer, a channel layer laminated on the barrier layer, a supply layer laminated on the channel layer. The barrier layer has either a p-type semiconductor or a wide band gap material. A gate electrode is located on the supply layer. A source electrode and a drain electrode are electrically connected to the channel layer and the supply layer.

Abstract: A thin film transistor is used to solve a problem of low process efficiency of the conventional thin film transistor in preventing hydrogen diffusion. The thin film transistor includes a substrate, multilayer thin films laminated on the substrate, and at least one fluorine-containing thin film laminated in substitution for the multilayer thin films. Each of the multilayer thin films is a gate insulating layer, an active layer, a buffer layer, and a dielectric layer or a protective layer. Each of the at least one fluorine-containing thin film is a fluorine-doped insulating layer, a fluorine-doped active layer, a fluorine-doped buffer layer, and a fluorine-doped dielectric layer or a fluorine-doped protective layer. The invention further discloses a method for manufacturing the thin film transistor.

Abstract: The disclosure relates to a linear actuator including a base, a linear motor, a load cell and a rotary motor. The linear motor is disposed on the base and includes a fixed coil module and a movable magnetic backplane. The fixed coil module is fixed on the base, and the movable magnetic backplane is configured to slide relative to the fixed coil module along a first direction. The rotary motor is rotated around a central axis in parallel with the first direction. The load cell has two opposite sides parallel to the first direction, respectively. The movable magnetic backplane of the linear motor and the rotary motor are connected to the two opposite sides of the load cell, respectively. The load cell is subjected to a force applied thereto by the rotary motor and parallel to the first direction, and configured to convert the force into an electrical signal.

Abstract: An automatic diaper wetness warning device includes a diaper, a wetness signal transmitting device and an externally disposed signal receiver. The diaper is provided with a wetness signal transmitting device including a signal transmitting and a positive and negative pole sensing electric wire assembly. A suitable length of the inner end of the wire assembly is provided with an insulation coating material that can conduct electricity when wet, and is wound into a signal actuating section embedded in the diaper in a position that can readily absorb urine. When the insulation coating material of the signal actuating section is wet and becomes short circuit, the signal transmitter will automatically generate a signal, which is received by the signal receiver. The signal receiver sends a suitable warning to remind a person taking care of the user of the diaper to change diaper.