Abstract: A semiconductor may include an active region, an epitaxial source/drain formed in and extending above the active region, and a first dielectric layer formed over a portion of the active region. The semiconductor may include a first metal gate and a second metal gate formed in the first dielectric layer, a second dielectric layer formed over the first dielectric layer and the second metal gate, and a titanium layer, without an intervening fluorine residual layer, formed on the metal gate and the epitaxial source/drain. The semiconductor may include a first metal layer formed on top of the titanium on the first metal gate, a second metal layer formed on top of the titanium layer on the epitaxial source/drain, and a third dielectric layer formed on the second dielectric layer. The semiconductor may include first and second vias formed in the third dielectric layer.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes channel structures vertically stacked over a substrate and a source/drain structure laterally attached to the channel structures in the first direction. The semiconductor structure also includes a dielectric wall structure laterally attached to the channel structures in the second direction. The second direction is different from the first direction. In addition, the dielectric wall structure includes a bottom portion and a cap layer formed over the bottom portion. The semiconductor structure also includes an isolation feature vertically overlapping the cap layer of the dielectric wall structure and a gate structure formed around the channel structures and covering a sidewall of the isolation feature.

Abstract: A device for detecting and correcting timing error and a method for designing typical-case timing using the same is disclosed. The device includes two datapath units connected with first and second multiplexers and two transition detectors. Each datapath unit receives and calculates an input signal to generate a speculation value and a correct value. Then, the speculation value and the correct value are transmitted to the first and second multiplexers and the transition detectors determine whether transition of the outputted speculation value is unstable. If yes, the datapath unit outputting the speculation value is stalled for a period of time for correction, whereby the second multiplexer outputs the correct value. If no, the datapath unit outputs the speculation value, then the present invention uses the undertaken timing as a setting specification to complete a circuit design. The present invention can improve system efficiency and power of the whole circuit.