Patents by Inventor Hong Chol LIM
Hong Chol LIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9455378Abstract: A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.Type: GrantFiled: March 28, 2014Date of Patent: September 27, 2016Assignee: Seoul Viosys Co., Ltd.Inventors: Kyung Hee Ye, Chang Youn Kim, Jin Cheol Shin, Joon Hee Lee, Jong Kyun You, Hong Chol Lim
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Patent number: 9142715Abstract: An exemplary embodiment of the present invention relates to a light emitting diode (LED) including a substrate, a first nitride semiconductor layer arranged on the substrate, an active layer arranged on the first nitride semiconductor layer, a second nitride semiconductor layer arranged on the active layer, a third nitride semiconductor layer disposed between the first nitride semiconductor layer or between the second nitride semiconductor layer and the active layer, the third nitride semiconductor layer comprising a plurality of scatter elements within the third nitride semiconductor layer, and a distributed Bragg reflector (DBR) comprising a multi-layered structure, the substrate being arranged between the DBR and the third nitride semiconductor layer.Type: GrantFiled: May 2, 2011Date of Patent: September 22, 2015Assignee: Seoul Viosys Co., Ltd.Inventors: Chang Youn Kim, Joon Hee Lee, Jong Kyun You, Hong Chol Lim, Hwa Mok Kim
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Publication number: 20140209952Abstract: A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.Type: ApplicationFiled: March 28, 2014Publication date: July 31, 2014Applicant: Seoul Viosys Co., Ltd.Inventors: Kyung Hee YE, Chang Youn Kim, Jin Cheol Shin, Joon Hee Lee, Jong Kyun You, Hong Chol Lim
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Patent number: 8791483Abstract: A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.Type: GrantFiled: March 31, 2011Date of Patent: July 29, 2014Assignee: Seoul Opto Device Co., Ltd.Inventors: Kyung Hee Ye, Chang Youn Kim, Jin Cheol Shin, Joon Hee Lee, Jong Kyun You, Hong Chol Lim
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Patent number: 8772805Abstract: A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.Type: GrantFiled: February 1, 2011Date of Patent: July 8, 2014Assignee: Seoul Viosys Co., Ltd.Inventors: Kyung Hee Ye, Chang Youn Kim, Jin Cheol Shin, Joon Hee Lee, Jong Kyun You, Hong Chol Lim
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Patent number: 8618565Abstract: Provided is a high-efficiency light emitting diode (LED) that includes: a support substrate; a semiconductor stack positioned on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; a first electrode positioned between the support substrate and the semiconductor stack and in ohmic contact with the semiconductor stack; a first bonding pad positioned on a portion of the first electrode that is exposed outside of the semiconductor stack; and a second electrode positioned on the semiconductor stack. Protrusions are formed on exposed surfaces of the semiconductor stack. In addition, the second electrode may be positioned between the first electrode and the support substrate and contacted with the n-type compound semiconductor layer through openings of the semiconductor stack.Type: GrantFiled: January 7, 2011Date of Patent: December 31, 2013Assignee: Seoul Opto Device Co., Ltd.Inventors: Chang Youn Kim, Joon Hee Lee, Jong Kyun You, Hong Chol Lim
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Patent number: 8410506Abstract: Provided is a high-efficiency light emitting diode (LED) that includes: a support substrate; a semiconductor stack positioned on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; a first electrode positioned between the support substrate and the semiconductor stack and in ohmic contact with the semiconductor stack; a first bonding pad positioned on a portion of the first electrode that is exposed outside of the semiconductor stack; and a second electrode positioned on the semiconductor stack. Protrusions are formed on exposed surfaces of the semiconductor stack. In addition, the second electrode may be positioned between the first electrode and the support substrate and contacted with the n-type compound semiconductor layer through openings of the semiconductor stack.Type: GrantFiled: March 31, 2011Date of Patent: April 2, 2013Assignee: Seoul Opto Device Co., Ltd.Inventors: Chang Youn Kim, Joon Hee Lee, Jong Kyun You, Hong Chol Lim
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Publication number: 20110316026Abstract: An exemplary embodiment of the present invention relates to a light emitting diode (LED) including a substrate, a first nitride semiconductor layer arranged on the substrate, an active layer arranged on the first nitride semiconductor layer, a second nitride semiconductor layer arranged on the active layer, a third nitride semiconductor layer disposed between the first nitride semiconductor layer or between the second nitride semiconductor layer and the active layer, the third nitride semiconductor layer comprising a plurality of scatter elements within the third nitride semiconductor layer, and a distributed Bragg reflector (DBR) comprising a multi-layered structure, the substrate being arranged between the DBR and the third nitride semiconductor layer.Type: ApplicationFiled: May 2, 2011Publication date: December 29, 2011Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Chang Youn KIM, Joon Hee LEE, Jong Kyun YOU, Hong Chol LIM, Hwa Mok KIM
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Publication number: 20110241045Abstract: A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.Type: ApplicationFiled: February 1, 2011Publication date: October 6, 2011Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Kyung Hee YE, Chang Youn KIM, Jin Cheol SHIN, Joon Hee LEE, Jong Kyun YOU, Hong Chol LIM
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Publication number: 20110241050Abstract: A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.Type: ApplicationFiled: March 31, 2011Publication date: October 6, 2011Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Kyung Hee YE, Chang Youn KIM, Jin Cheol SHIN, Joon Hee LEE, Jong Kyun YOU, Hong Chol LIM
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Publication number: 20110227114Abstract: Provided is a high-efficiency light emitting diode (LED) that includes: a support substrate; a semiconductor stack positioned on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; a first electrode positioned between the support substrate and the semiconductor stack and in ohmic contact with the semiconductor stack; a first bonding pad positioned on a portion of the first electrode that is exposed outside of the semiconductor stack; and a second electrode positioned on the semiconductor stack. Protrusions are formed on exposed surfaces of the semiconductor stack. In addition, the second electrode may be positioned between the first electrode and the support substrate and contacted with the n-type compound semiconductor layer through openings of the semiconductor stack.Type: ApplicationFiled: March 31, 2011Publication date: September 22, 2011Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Chang Youn KIM, Joon Hee LEE, Jong Kyun YOU, Hong Chol LIM
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Publication number: 20110227109Abstract: Provided is a high-efficiency light emitting diode (LED) that includes: a support substrate; a semiconductor stack positioned on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; a first electrode positioned between the support substrate and the semiconductor stack and in ohmic contact with the semiconductor stack; a first bonding pad positioned on a portion of the first electrode that is exposed outside of the semiconductor stack; and a second electrode positioned on the semiconductor stack. Protrusions are formed on exposed surfaces of the semiconductor stack. In addition, the second electrode may be positioned between the first electrode and the support substrate and contacted with the n-type compound semiconductor layer through openings of the semiconductor stack.Type: ApplicationFiled: January 7, 2011Publication date: September 22, 2011Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Chang Youn KIM, Joon Hee LEE, Jong Kyun YOU, Hong Chol LIM