Patents by Inventor Hong Chul Park

Hong Chul Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11932618
    Abstract: Disclosed are novel compounds of Chemical Formula 1, optical isomers of the compounds, and pharmaceutically acceptable salts of the compounds or the optical isomers. The compounds, isomers, and salts exhibit excellent activity as GLP-1 receptor agonists. In particular, they, as GLP-1 receptor agonists, exhibit excellent glucose tolerance, thus having a great potential to be used as therapeutic agents for metabolic diseases. Moreover, they exhibit excellent pharmacological safety for cardiovascular systems.
    Type: Grant
    Filed: March 13, 2023
    Date of Patent: March 19, 2024
    Assignee: ILDONG PHARMACEUTICAL CO., LTD.
    Inventors: Hong Chul Yoon, Kyung Mi An, Myong Jae Lee, Jin Hee Lee, Jeong-geun Kim, A-rang Im, Woo Jin Jeon, Jin Ah Jeong, Jaeho Heo, Changhee Hong, Kyeojin Kim, Jung-Eun Park, Te-ik Sohn, Changmok Oh, Da Hae Hong, Sung Wook Kwon, Jung Ho Kim, Jae Eui Shin, Yeongran Yoo, Min Whan Chang, Eun Hye Jang, In-gyu Je, Ji Hye Choi, Gunhee Kim, Yearin Jun
  • Publication number: 20240072140
    Abstract: A semiconductor device includes, first and second source/drain patterns on an active pattern and spaced apart from each other, a first source/drain contact on the first source/drain pattern and including a first source/drain barrier film and a first source/drain filling film on the first source/drain barrier film, a second source/drain contact on the second source/drain pattern, and a gate structure on the active pattern between the first and second source/drain contacts and including a gate electrode, wherein a top surface of the first source/drain contact is lower than a top surface of the gate structure, and a height from a top surface of the active pattern to a top surface of the first source/drain barrier film is less than a height from the top surface of the active pattern to a top surface of the first source/drain filling film.
    Type: Application
    Filed: November 6, 2023
    Publication date: February 29, 2024
    Inventors: Won Hyuk Lee, Jong Chul Park, Sang Duk Park, Hong Sik Shin, Do Haing Lee
  • Patent number: 7639189
    Abstract: An antenna device for a mobile terminal. The antenna device includes a first antenna pattern provided within a case of the mobile terminal, and a second antenna pattern provided within the case and electrically connected to the first antenna pattern through contact with the first antenna pattern. Therefore, by forming an antenna device with an antenna pattern for use in a low frequency band, the antenna device may be conveniently used and decrease the size of the mobile terminal.
    Type: Grant
    Filed: July 20, 2007
    Date of Patent: December 29, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yong Hyun Kim, Dong Woo Kim, Hong Chul Park, Kyung Mok Yoo, Sung Kee Kim
  • Publication number: 20080079651
    Abstract: An antenna device for a mobile terminal. The antenna device includes a first antenna pattern provided within a case of the mobile terminal, and a second antenna pattern provided within the case and electrically connected to the first antenna pattern through contact with the first antenna pattern. Therefore, by forming an antenna device with an antenna pattern for use in a low frequency band, the antenna device may be conveniently used and decrease the size of the mobile terminal.
    Type: Application
    Filed: July 20, 2007
    Publication date: April 3, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yong Hyun KIM, Dong Woo KIM, Hong Chul PARK, Kyung Mok YOO, Sung Kee KIM