Patents by Inventor Hong Gi NAM

Hong Gi NAM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230253153
    Abstract: A multilayer capacitor includes a body including a plurality of dielectric layers and a plurality of internal electrodes laminated in a first direction, and external electrodes. The body includes an active portion, in which the plurality of internal electrodes are disposed to form capacitance, corresponding to a region between internal electrodes disposed on an outermost side in the first direction, among the plurality of internal electrodes, a cover portion covering the active portion in the first direction, and a side margin portion covering the active portion in a second direction, perpendicular to the first direction, and 1.49<A1/A2<2.50 where A1 is an average grain size of the dielectric layer in a central region of the active portion, and A2 is an average grain size of the dielectric layer in an active-cover boundary portion, adjacent to the cover portion, of the active portion.
    Type: Application
    Filed: April 17, 2023
    Publication date: August 10, 2023
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Hong Gi NAM, Seung In BAIK, Ji Su HONG, Eun Ha JANG, Hee Sun CHUN, Jae Sung PARK
  • Patent number: 11657971
    Abstract: A multilayer capacitor includes a body including a plurality of dielectric layers and a plurality of internal electrodes laminated in a first direction, and external electrodes. The body includes an active portion, in which the plurality of internal electrodes are disposed to form capacitance, corresponding to a region between internal electrodes disposed on an outermost side in the first direction, among the plurality of internal electrodes, a cover portion covering the active portion in the first direction, and a side margin portion covering the active portion in a second direction, perpendicular to the first direction, and 1.49<A1/A2<2.50 where A1 is an average grain size of the dielectric layer in a central region of the active portion, and A2 is an average grain size of the dielectric layer in an active-cover boundary portion, adjacent to the cover portion, of the active portion.
    Type: Grant
    Filed: June 4, 2021
    Date of Patent: May 23, 2023
    Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Hong Gi Nam, Seung In Baik, Ji Su Hong, Eun Ha Jang, Hee Sun Chun, Jae Sung Park
  • Patent number: 11636979
    Abstract: A dielectric composition includes: a BaTiO3-based main component and a first accessory component, wherein the first accessory component includes dysprosium (Dy) and terbium (Tb), the sum (Dy+Tb) of contents of dysprosium (Dy) and terbium (Tb) is more than 1.5 mol and 2.0 mol or less based on 100 mol of Ti of the main component, and 0.1?Tb/Dy<0.15 in which Tb/Dy is a ratio of the content of terbium (Tb) to the content of dysprosium (Dy).
    Type: Grant
    Filed: August 2, 2021
    Date of Patent: April 25, 2023
    Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Hee Sun Chun, Hong Gi Nam, Je Hee Lee, Ji Su Hong, Seung In Baik, Jae Sung Park
  • Publication number: 20220208455
    Abstract: A multilayer capacitor includes a body including a plurality of dielectric layers and a plurality of internal electrodes laminated in a first direction, and external electrodes. The body includes an active portion, in which the plurality of internal electrodes are disposed to form capacitance, corresponding to a region between internal electrodes disposed on an outermost side in the first direction, among the plurality of internal electrodes, a cover portion covering the active portion in the first direction, and a side margin portion covering the active portion in a second direction, perpendicular to the first direction, and 1.49<A1/A2<2.50 where A1 is an average grain size of the dielectric layer in a central region of the active portion, and A2 is an average grain size of the dielectric layer in an active-cover boundary portion, adjacent to the cover portion, of the active portion.
    Type: Application
    Filed: June 4, 2021
    Publication date: June 30, 2022
    Inventors: Hong Gi NAM, Seung In BAIK, Ji Su HONG, Eun Ha JANG, Hee Sun CHUN, Jae Sung PARK
  • Publication number: 20220181080
    Abstract: A dielectric composition includes: a BaTiO3-based main component and a first accessory component, wherein the first accessory component includes dysprosium (Dy) and terbium (Tb), the sum (Dy+Tb) of contents of dysprosium (Dy) and terbium (Tb) is more than 1.5 mol and 2.0 mol or less based on 100 mol of Ti of the main component, and 0.1?Tb/Dy<0.15 in which Tb/Dy is a ratio of the content of terbium (Tb) to the content of dysprosium (Dy).
    Type: Application
    Filed: August 2, 2021
    Publication date: June 9, 2022
    Inventors: Hee Sun CHUN, Hong Gi NAM, Je Hee LEE, Ji Su HONG, Seung In BAIK, Jae Sung PARK