Abstract: A touch display panel is provided and includes a substrate, a plurality of gate lines, a plurality of data lines, a plurality of data output lines, a plurality of thin film transistors, and a plurality of detection capacitors. The gate lines are disposed on the substrate. The data lines are disposed on the substrate. The data lines and the gate lines define a plurality of pixel regions on the substrate. The data output lines are disposed on the substrate, and each data output line is disposed next to one data line. The thin film transistors are respectively disposed in the pixel regions. Each thin film transistor is electrically connected to the corresponding gate line and the corresponding data line. The detection capacitors are respectively disposed in the pixel regions. Each detection capacitor is electrically connected to the corresponding gate line and the corresponding data line.

Abstract: A thin film transistor (TFT) substrate includes a transparent substrate, a plurality of TFTs and a photosensitive capacitor formed on the transparent substrate. A capacitance of the photosensitive capacitor is variable on the condition of environment brightness. A method for manufacturing the TFT substrate and an LCD using the TFT substrate are also provided.

Abstract: A liquid crystal panel of the present disclosure includes a first common electrode defining a plurality of first common electrode portions, a plurality of second common electrode portions connected to the first common electrode, and a plurality of pixel electrodes. Each pixel electrode overlaps one of the first common electrode portions and a corresponding one of the second common electrode portions, thereby forming storage capacitors therebetween. Each second common electrode portion defines a first notch adjacent to the pixel electrode. There is no overlap between the pixel electrode and the second common electrode portion at the first notch.

Abstract: A method for fabricating a flexible display device includes providing a carrier substrate, forming a sacrificial layer on the carrier substrate, forming a metal layer and a buffer layer on the sacrificial layer in that order, forming at least one active device on the buffer layer, and separating the metal layer and the carrier substrate by laser treatment.

Abstract: A liquid crystal panel of the present disclosure includes a first common electrode defining a plurality of first common electrode portions, a plurality of second common electrode portions connected to the first common electrode, and a plurality of pixel electrodes. Each pixel electrode overlaps one of the first common electrode portions and a corresponding one of the second common electrode portions, thereby forming storage capacitors therebetween. Each second common electrode portion defines a first notch adjacent to the pixel electrode. There is no overlap between the pixel electrode and the second common electrode portion at the first notch.

Abstract: An exemplary method for fabricating an LTPS-TFT substrate is as follows. In step S1, a p-Si pattern including a source electrode contact region and a drain electrode contact region of a first type TFT, a source electrode contact region and a drain electrode contact region of a second type TFT is formed. In step S2, the source electrode contact region and the drain electrode contact region of the first type TFT are heavily doped with a first dopant. In step S3, gate electrodes of the first and the second type TFT are formed. In step S4, the source electrode contact regions and drain electrode contact regions of the first and second type TFTs are heavily doped with a second dopant. The first dopant and the second dopant are compensative, and the number ratio of the first dopant to the second dopant is approximately 2 to 1.

Abstract: A touch display panel is provided and includes a substrate, a plurality of gate lines, a plurality of data lines, a plurality of data output lines, a plurality of thin film transistors, and a plurality of detection capacitors. The gate lines are disposed on the substrate. The data lines are disposed on the substrate. The data lines and the gate lines define a plurality of pixel regions on the substrate. The data output lines are disposed on the substrate, and each data output line is disposed next to one data line. The thin film transistors are respectively disposed in the pixel regions. Each thin film transistor is electrically connected to the corresponding gate line and the corresponding data line. The detection capacitors are respectively disposed in the pixel regions. Each detection capacitor is electrically connected to the corresponding gate line and the corresponding data line.

Abstract: A method for fabricating a flexible display device includes providing a carrier substrate, forming a sacrificial layer on the carrier substrate, forming a metal layer and a buffer layer on the sacrificial layer in that order, forming at least one active device on the buffer layer, and separating the metal layer and the carrier substrate by laser treatment.

Abstract: A pixel circuit of an active matrix organic light emitting diode (AMOLED) device includes a scan line, a data line, a first switching thin film transistor (TFT), a capacitor connected between a drain electrode of the first switching TFT and ground, an organic light emitting diode, a driving TFT, and a control circuit. A gate electrode and a source electrode of the first switching TFT are respectively connected to the scan line and the data line. A gate electrode of the driving TFT is connected to a drain electrode of the first switching TFT, and a driving current is applied to the organic light emitting diode via the driving TFT. The control circuit connected to the data line detects a voltage value of the driving current, and regulates a voltage value of the data signal according to the voltage value of the driving current.

Abstract: An exemplary method for fabricating an LTPS-TFT substrate is as follows. In step S1, a p-Si pattern including a source electrode contact region and a drain electrode contact region of a first type TFT, a source electrode contact region and a drain electrode contact region of a second type TFT is formed. In step S2, the source electrode contact region and the drain electrode contact region of the first type TFT are heavily doped with a first dopant. In step S3, gate electrodes of the first and the second type TFT are formed. In step S4, the source electrode contact regions and drain electrode contact regions of the first and second type TFTs are heavily doped with a second dopant. The first dopant and the second dopant are compensative, and the number ratio of the first dopant to the second dopant is approximately 2 to 1.

Abstract: A thin film transistor (TFT) substrate includes a transparent substrate, a plurality of TFTs and a photosensitive capacitor formed on the transparent substrate. A capacitance of the photosensitive capacitor is variable on the condition of environment brightness. A method for manufacturing the TFT substrate and an LCD using the TFT substrate are also provided.

Abstract: An organic light emitting diode (OLED) display device includes a substrate and an organic thin film transistor (OTFT) on the substrate. The OTFT includes a gate, an insulating layer covering the gate, and a channel layer arranged on the insulating layer corresponding to the gate. The channel layer includes a doped layer. A method for fabricating the OLED display device is also provided.

Abstract: A liquid crystal panel of the present disclosure includes a first common electrode defining a plurality of first common electrode portions, a plurality of second common electrode portions connected to the first common electrode, and a plurality of pixel electrodes. Each pixel electrode overlaps one of the first common electrode portions and a corresponding one of the second common electrode portions, thereby forming storage capacitors therebetween. Each second common electrode portion defines a first notch adjacent to the pixel electrode. There is no overlap between the pixel electrode and the second common electrode portion at the first notch.

Abstract: An exemplary thin film transistor substrate (200) includes a base (201), a semiconductor pattern (202) formed on the base, a first gate insulating layer (203) formed on the semiconductor pattern, and a gate electrode (223) and a common capacitor electrode (245) formed on the first gate insulating layer. The semiconductor pattern includes a heavily doped polysilicon pattern (212) and a lightly doped polysilicon pattern (213). The gate electrode and the common capacitor electrode correspond to the lightly doped polysilicon pattern. An exemplary method for fabricating the thin film transistor substrate is also provided.

Abstract: An exemplary method for fabricating a polysilicon layer (208) includes the following steps. A substrate (200) is provided, and a first amorphous silicon layer (203) is formed over the substrate. Portions of the first amorphous silicon layer are removed through a photolithograph process to form a plurality of crystallization seeds (205). A second amorphous silicon layer (206) is formed over the substrate and the crystallization seeds. A laser annealing process is conducted to crystallize the amorphous silicon layer into a polysilicon layer.