Patents by Inventor Hong-Goo Choi

Hong-Goo Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200189978
    Abstract: A refractory article is described, the refractory article including a refractory body and a refractory coating layer deposited on a surface thereof, wherein the refractory coating layer includes silica, alumina, boron oxide, and calcium oxide. The refractory article may be at least one of a melting vessel, a clarifying vessel and a molding apparatus. A composition for coating a refractory article and a method of manufacturing the refractory article are also disclosed.
    Type: Application
    Filed: May 14, 2018
    Publication date: June 18, 2020
    Inventors: Myeong-jin Cho, Hong-goo Choi, Jae-ho Lee, Yong-won Lee
  • Publication number: 20200171799
    Abstract: Described herein are articles and methods of making articles, for example glass articles, comprising a thin sheet and a carrier, wherein the thin sheet and carrier are bonded together using a modification (coating) layer, for example a cationic polymer coating layer, and associated deposition methods, the carrier, or both, to control van der Waals, hydrogen and covalent bonding between the thin sheet and the carrier. The modification layer bonds the thin sheet and carrier together with sufficient bond strength to prevent delamination of the thin sheet and the carrier during high temperature (?600° C.) processing while also preventing formation of a permanent bond between the sheets during such processing.
    Type: Application
    Filed: August 20, 2018
    Publication date: June 4, 2020
    Applicant: CORNING INCORPORATED
    Inventors: Kaveh Adib, Indrani Bhattacharyya, Pei-Chen Chiang, Hong-goo Choi, Dae youn Kim, Jen-Chieh Lin, Prantik Mazumder, Pei-Lien Tseng
  • Patent number: 6620708
    Abstract: A semiconductor device and method for fabricating a semiconductor device yields improved doping efficiency and increased capacitance. The method includes forming a silicon film on a substrate. HSG having a spherical projection forms on a surface of the silicon film. The surface of the silicon film having the HSG is washed, and a lower electrode forms by a doping process. A dielectric film and an upper electrode are sequentially formed on the silicon film without washing.
    Type: Grant
    Filed: November 28, 2000
    Date of Patent: September 16, 2003
    Assignee: Hynix Semiconductor
    Inventor: Hong Goo Choi
  • Patent number: 6413787
    Abstract: A method for fabricating a dielectric film can increase capacitance by etching a film generated by annealing for preprocess using NO gas. The method for fabricating the dielectric film includes: a step for performing a first annealing on a silicon lower electrode, and forming a first insulating film on the upper surface of the silicon lower electrode; a step for etching the first insulating film; a step for forming a second insulating film on the silicon lower electrode; and a step for performing a second annealing.
    Type: Grant
    Filed: July 10, 2000
    Date of Patent: July 2, 2002
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventor: Hong-Goo Choi