Abstract: Described herein are articles and methods of making articles, for example glass articles, comprising a thin sheet and a carrier, wherein the thin sheet and carrier are bonded together using a modification (coating) layer, for example a cationic polymer coating layer, and associated deposition methods, the carrier, or both, to control van der Waals, hydrogen and covalent bonding between the thin sheet and the carrier. The modification layer bonds the thin sheet and carrier together with sufficient bond strength to prevent delamination of the thin sheet and the carrier during high temperature (?600° C.) processing while also preventing formation of a permanent bond between the sheets during such processing.

Abstract: Provided are a refractory article, an anti-redox coating composition, and a method of manufacturing the refractory article. The refractory article includes: a platinum(Pt)-based substrate; and a coating layer for preventing a redox reaction on a surface of the Pt-based substrate, wherein the coating layer for preventing a redox reaction includes on an oxide basis SiO2 in an amount of about 40 wt % to about 70 wt %, Al2O3 in an amount of about 20 wt % to about 52 wt %, B2O3 in an amount of about 3 wt % to about 6 wt %; and CaO in an amount of about 2.4 wt % to about 4.8 wt %.

Abstract: Provided are a refractory article, an anti-redox coating composition, and a method of manufacturing the refractory article. The refractory article includes: a platinum (Pt)-based substrate; and a coating layer for preventing a redox reaction on a surface of the Pt-based substrate, wherein the coating layer for preventing a redox reaction includes on an oxide basis SiO2 in an amount of about 40 wt % to about 70 wt %, Al2O3 in an amount of about 20 wt % to about 52 wt %, B2O3 in an amount of about 3 wt % to about 6 wt %; and CaO in an amount of about 2.4 wt % to about 4.8 wt %.

Abstract: Provided are a refractory article, an anti-redox coating composition, and a method of manufacturing the refractory article. The refractory article includes: a platinum (Pt)-based substrate; and a coating layer for preventing a redox reaction on a surface of the Pt-based substrate, wherein the coating layer for preventing a redox reaction includes on an oxide basis SiO2 in an amount of about 40 wt % to about 70 wt %, Al2O3 in an amount of about 20 wt % to about 52 wt %, B2O3 in an amount of about 3 wt % to about 6 wt %; and CaO in an amount of about 2.4 wt % to about 4.8 wt %.

Abstract: A refractory article is described, the refractory article including a refractory body and a refractory coating layer deposited on a surface thereof, wherein the refractory coating layer includes silica, alumina, boron oxide, and calcium oxide. The refractory article may be at least one of a melting vessel, a clarifying vessel and a molding apparatus. A composition for coating a refractory article and a method of manufacturing the refractory article are also disclosed.

Abstract: Described herein are articles and methods of making articles, for example glass articles, comprising a thin sheet and a carrier, wherein the thin sheet and carrier are bonded together using a modification (coating) layer, for example a cationic polymer coating layer, and associated deposition methods, the carrier, or both, to control van der Waals, hydrogen and covalent bonding between the thin sheet and the carrier. The modification layer bonds the thin sheet and carrier together with sufficient bond strength to prevent delamination of the thin sheet and the carrier during high temperature (?600° C.) processing while also preventing formation of a permanent bond between the sheets during such processing.

Abstract: A semiconductor device and method for fabricating a semiconductor device yields improved doping efficiency and increased capacitance. The method includes forming a silicon film on a substrate. HSG having a spherical projection forms on a surface of the silicon film. The surface of the silicon film having the HSG is washed, and a lower electrode forms by a doping process. A dielectric film and an upper electrode are sequentially formed on the silicon film without washing.

Abstract: A method for fabricating a dielectric film can increase capacitance by etching a film generated by annealing for preprocess using NO gas. The method for fabricating the dielectric film includes: a step for performing a first annealing on a silicon lower electrode, and forming a first insulating film on the upper surface of the silicon lower electrode; a step for etching the first insulating film; a step for forming a second insulating film on the silicon lower electrode; and a step for performing a second annealing.