Patents by Inventor Hong-Hsien KE
Hong-Hsien KE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230197524Abstract: An etch stop layer is formed over a semiconductor fin and gate stack. The etch stop layer is formed utilizing a series of pulses of precursor materials. A first pulse introduces a first precursor material to the semiconductor fin and gate stack. A second pulse introduces a second precursor material, which is turned into a plasma and then directed towards the semiconductor fin and gate stack in an anisotropic deposition process. As such, a thickness of the etch stop layer along a bottom surface is larger than a thickness of the etch stop layer along sidewalls.Type: ApplicationFiled: February 13, 2023Publication date: June 22, 2023Inventors: Chun-Yi Lee, Hong-Hsien Ke, Chung-Ting Ko, Chia-Hui Lin, Jr-Hung Li
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Patent number: 11600530Abstract: An etch stop layer is formed over a semiconductor fin and gate stack. The etch stop layer is formed utilizing a series of pulses of precursor materials. A first pulse introduces a first precursor material to the semiconductor fin and gate stack. A second pulse introduces a second precursor material, which is turned into a plasma and then directed towards the semiconductor fin and gate stack in an anisotropic deposition process. As such, a thickness of the etch stop layer along a bottom surface is larger than a thickness of the etch stop layer along sidewalls.Type: GrantFiled: December 7, 2018Date of Patent: March 7, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Yi Lee, Hong-Hsien Ke, Chung-Ting Ko, Chia-Hui Lin, Jr-Hung Li
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Publication number: 20220190127Abstract: A semiconductor structure is provided. The semiconductor structure includes a gate structure, a source/drain structure, a barrier layer, and a glue layer. The gate structure is over a fin structure. The source/drain structure is in the fin structure and adjacent to the gate structure. The barrier layer is over the source/drain structure. The glue layer is adjacent to the barrier layer. The glue layer has an extending portion in direct contact with the gate structure.Type: ApplicationFiled: March 4, 2022Publication date: June 16, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih-Wen HUANG, Chung-Ting KO, Hong-Hsien KE, Chia-Hui LIN, Tai-Chun HUANG
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Patent number: 11296198Abstract: A method for forming a semiconductor structure is provided. The method includes forming a gate structure over a fin structure, forming a source/drain structure in the fin structure and adjacent to the gate structure, forming a dielectric layer over the gate structure and the source/drain structure, and forming an opening in the dielectric layer to expose the source/drain structure. The method further includes depositing a barrier layer lining a sidewall surface of the opening and a top surface of the source/drain structure. The method further includes etching a portion of the barrier layer to expose the source/drain structure. The method further includes depositing a glue layer covering the sidewall surface of the opening and the source/drain structure in the opening. The method further includes forming a contact structure filling the opening in the dielectric layer. The contact structure is surrounded by the glue layer.Type: GrantFiled: April 2, 2020Date of Patent: April 5, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shih-Wen Huang, Chung-Ting Ko, Hong-Hsien Ke, Chia-Hui Lin, Tai-Chun Huang
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Patent number: 11152262Abstract: A method includes etching a gate structure to form a trench extending into the gate structure, wherein sidewalls of the trench comprise a metal oxide material, applying a sidewall treatment process to the sidewalls of the trench, wherein the metal oxide material has been removed as a result of applying the sidewall treatment process and filling the trench with a first dielectric material to form a dielectric region, wherein the dielectric region is in contact with the sidewall of the gate structure.Type: GrantFiled: November 12, 2019Date of Patent: October 19, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Yi Lee, Ting-Gang Chen, Chieh-Ping Wang, Hong-Hsien Ke, Chia-Hui Lin, Tai-Chun Huang
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Patent number: 11049945Abstract: Semiconductor device structures and methods for forming the same are provided. A semiconductor device structure includes a gate structure over a semiconductor substrate. The gate structure includes a gate electrode layer and a gate dielectric layer covering a bottom surface and sidewalls of the gate electrode layer. The semiconductor device structure also includes spacer elements in contact with sidewalls of the gate structure and protruding from a top surface of the gate electrode layer. The semiconductor device structure also includes a first protection layer over the gate electrode layer and between the spacer elements. The semiconductor device structure also includes a dielectric layer over the first protection layer and between the spacer elements. A portion of the dielectric layer is between sidewalls of the spacer elements and sidewalls of the first protection layer.Type: GrantFiled: April 29, 2019Date of Patent: June 29, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shih-Wen Huang, Yun-Wen Chu, Hong-Hsien Ke, Chia-Hui Lin, Shin-Yeu Tsai, Shih-Chieh Chang
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Publication number: 20200235214Abstract: A method for forming a semiconductor structure is provided. The method includes forming a gate structure over a fin structure, forming a source/drain structure in the fin structure and adjacent to the gate structure, forming a dielectric layer over the gate structure and the source/drain structure, and forming an opening in the dielectric layer to expose the source/drain structure. The method further includes depositing a barrier layer lining a sidewall surface of the opening and a top surface of the source/drain structure. The method further includes etching a portion of the barrier layer to expose the source/drain structure. The method further includes depositing a glue layer covering the sidewall surface of the opening and the source/drain structure in the opening. The method further includes forming a contact structure filling the opening in the dielectric layer. The contact structure is surrounded by the glue layer.Type: ApplicationFiled: April 2, 2020Publication date: July 23, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shih-Wen HUANG, Chung-Ting KO, Hong-Hsien KE, Chia-Hui LIN, Tai-Chun HUANG
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Publication number: 20200176259Abstract: A method includes etching a gate structure to form a trench extending into the gate structure, wherein sidewalls of the trench comprise a metal oxide material, applying a sidewall treatment process to the sidewalls of the trench, wherein the metal oxide material has been removed as a result of applying the sidewall treatment process and filling the trench with a first dielectric material to form a dielectric region, wherein the dielectric region is in contact with the sidewall of the gate structure.Type: ApplicationFiled: November 12, 2019Publication date: June 4, 2020Inventors: Chun-Yi Lee, Ting-Gang Chen, Chieh-Ping Wang, Hong-Hsien Ke, Chia-Hui Lin, Tai-Chun Huang
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Patent number: 10629693Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure, a gate spacer, a source/drain structure, a contact structure, a glue layer and a barrier layer. The gate structure is positioned over a fin structure. The gate spacer is positioned over the fin structure and on a sidewall surface of the gate structure. The source/drain structure is positioned in the fin structure and adjacent to the gate spacer. The contact structure is positioned over the source/drain structure. The glue layer covers a bottom surface and a sidewall surface of the contact structure. The barrier layer encircles the sidewall surface of the contact structure. A bottom surface of the glue layer is exposed to the barrier layer.Type: GrantFiled: May 30, 2018Date of Patent: April 21, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shih-Wen Huang, Chung-Ting Ko, Hong-Hsien Ke, Chia-Hui Lin, Tai-Chun Huang
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Publication number: 20200043799Abstract: An etch stop layer is formed over a semiconductor fin and gate stack. The etch stop layer is formed utilizing a series of pulses of precursor materials. A first pulse introduces a first precursor material to the semiconductor fin and gate stack. A second pulse introduces a second precursor material, which is turned into a plasma and then directed towards the semiconductor fin and gate stack in an anisotropic deposition process. As such, a thickness of the etch stop layer along a bottom surface is larger than a thickness of the etch stop layer along sidewalls.Type: ApplicationFiled: December 7, 2018Publication date: February 6, 2020Inventors: Chun-Yi Lee, Hong-Hsien Ke, Chung-Ting Ko, Chia-Hui Lin, Jr-Hung Li
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Publication number: 20190259847Abstract: Semiconductor device structures and methods for forming the same are provided. A semiconductor device structure includes a gate structure over a semiconductor substrate. The gate structure includes a gate electrode layer and a gate dielectric layer covering a bottom surface and sidewalls of the gate electrode layer. The semiconductor device structure also includes spacer elements in contact with sidewalls of the gate structure and protruding from a top surface of the gate electrode layer. The semiconductor device structure also includes a first protection layer over the gate electrode layer and between the spacer elements. The semiconductor device structure also includes a dielectric layer over the first protection layer and between the spacer elements. A portion of the dielectric layer is between sidewalls of the spacer elements and sidewalls of the first protection layer.Type: ApplicationFiled: April 29, 2019Publication date: August 22, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shih-Wen HUANG, Yun-Wen CHU, Hong-Hsien KE, Chia-Hui LIN, Shin-Yeu TSAI, Shih-Chieh CHANG
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Publication number: 20190157405Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure, a gate spacer, a source/drain structure, a contact structure, a glue layer and a barrier layer. The gate structure is positioned over a fin structure. The gate spacer is positioned over the fin structure and on a sidewall surface of the gate structure. The source/drain structure is positioned in the fin structure and adjacent to the gate spacer. The contact structure is positioned over the source/drain structure. The glue layer covers a bottom surface and a sidewall surface of the contact structure. The barrier layer encircles the sidewall surface of the contact structure. A bottom surface of the glue layer is exposed to the barrier layer.Type: ApplicationFiled: May 30, 2018Publication date: May 23, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shih-Wen HUANG, Chung-Ting KO, Hong-Hsien KE, Chia-Hui LIN, Tai-Chun HUANG
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Patent number: 10276677Abstract: Semiconductor device structures and methods for forming the same are provided. A method for forming a semiconductor device structure includes forming a gate structure over a semiconductor substrate. The method also includes forming spacer elements adjoining sidewalls of the gate structure. The method further includes forming a protection material layer over the gate structure. The formation of the protection material layer includes a substantial non-plasma process. In addition, the method includes depositing a dielectric material layer over the protection material layer. The deposition of the dielectric material layer includes a plasma-involved process.Type: GrantFiled: April 21, 2017Date of Patent: April 30, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shih-Wen Huang, Yun-Wen Chu, Hong-Hsien Ke, Chia-Hui Lin, Shin-Yeu Tsai, Shih-Chieh Chang
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Publication number: 20180151680Abstract: Semiconductor device structures and methods for forming the same are provided. A method for forming a semiconductor device structure includes forming a gate structure over a semiconductor substrate. The method also includes forming spacer elements adjoining sidewalls of the gate structure. The method further includes forming a protection material layer over the gate structure. The formation of the protection material layer includes a substantial non-plasma process. In addition, the method includes depositing a dielectric material layer over the protection material layer. The deposition of the dielectric material layer includes a plasma-involved process.Type: ApplicationFiled: April 21, 2017Publication date: May 31, 2018Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shih-Wen HUANG, Yun-Wen CHU, Hong-Hsien KE, Chia-Hui LIN, Shin-Yeu TSAI, Shih-Chieh CHANG