Patents by Inventor Hong-Huei Huang

Hong-Huei Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for preparing ingot having reduced distortion at late body length
    Patent number: 11959189
    Abstract: A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.
    Type: Grant
    Filed: April 3, 2020
    Date of Patent: April 16, 2024
    Assignee: GlobalWafers Co., Ltd.
    Inventors: Tapas Jain, Sumeet S. Bhagavat, Zheng Lu, Feng-Chien Tsai, Hong-Huei Huang
  • INTEGRATED CIRCUIT DIE WITH MEMORY MACRO INCLUDING THROUGH-SILICON VIA AND METHOD OF FORMING THE SAME
    Publication number: 20240096757
    Abstract: An integrated circuit (IC) die includes first through third adjacent rows of through-silicon vias (TSVs), and first and second adjacent rows of memory macros. TSVs of the first row of TSVs extend through and are electrically isolated from memory macros of the first row of memory macros. TSVs of the third row of TSVs extend through and are electrically isolated from memory macros of the second row of memory macros.
    Type: Application
    Filed: November 30, 2023
    Publication date: March 21, 2024
    Inventors: Hidehiro FUJIWARA, Tze-Chiang HUANG, Hong-Chen CHENG, Yen-Huei CHEN, Hung-Jen LIAO, Jonathan Tsung-Yung CHANG, Yun-Han LEE, Lee-Chung LU
  • SINGLE CRYSTAL GROWTH SUSCEPTOR ASSEMBLY WITH SACRIFICE RING
    Publication number: 20240076797
    Abstract: A susceptor assembly for supporting a crucible during a crystal growth process includes a susceptor base, a tubular sidewall connected to the susceptor base, and a removable sacrifice ring interposed between the susceptor base and the sidewall. Each of the susceptor base and the sidewall is formed of a carbon-containing material. The susceptor base has an annular wall and a shoulder extending radially outward from an outer surface of the annular wall. The sidewall has a first end that receives the annular wall to connect the sidewall to the susceptor base. The sacrifice ring has a first surface that faces the outer surface of the annular wall, a second surface that faces an interior surface of the sidewall, and a ledge extending outward from the second surface that engages the first end of the sidewall.
    Type: Application
    Filed: September 7, 2022
    Publication date: March 7, 2024
    Inventors: Hong-Huei Huang, Benjamin Michael Meyer, Chun-Sheng Wu, Wei-Chen Chou, Chen-Yi Lin, Feng-Chien Tsai
  • INGOT PULLER APPARATUS HAVING SILICON FEED TUBES WITH KICK PLATES
    Publication number: 20230272552
    Abstract: Ingot puller apparatus that include a silicon feed tube for adding solid silicon to a crucible assembly are disclosed. The silicon feed tubes include a conduit portion having an inner diameter and a kick plate disposed below the conduit portion. The kick plate extends across at least 60% of the inner diameter of the conduit portion.
    Type: Application
    Filed: February 2, 2023
    Publication date: August 31, 2023
    Inventors: Chun-Sheng Wu, Hong-Huei Huang, Wei-Chen Chou, Chen-Yi Lin, Feng-Chien Tsai, Zheng Lu
  • METHODS FOR DETERMINING SUITABILITY OF CZOCHRALSKI GROWTH CONDITIONS FOR PRODUCING SUBSTRATES FOR EPITAXY
    Publication number: 20220403549
    Abstract: Methods for determining suitability of Czochralski growth conditions to produce silicon substrates for epitaxy. The methods involve evaluating substrates sliced from ingots grown under different growth conditions (e.g., impurity profiles) by imaging the wafer by infrared depolarization. An infrared depolarization parameter is generated for each epitaxial wafer. The parameters may be compared to determine which growth conditions are well-suited to produce substrates for epitaxial and/or post-epi heat treatments.
    Type: Application
    Filed: June 7, 2022
    Publication date: December 22, 2022
    Inventors: Zheng Lu, Shan-Hui Lin, Chun-Chin Tu, Chi-Yung Chen, Feng-Chien Tsai, Hong-Huei Huang
  • PROCESS FOR PREPARING INGOT HAVING REDUCED DISTORTION AT LATE BODY LENGTH
    Publication number: 20220220631
    Abstract: A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.
    Type: Application
    Filed: April 3, 2020
    Publication date: July 14, 2022
    Inventors: Tapas Jain, Sumeet S. Bhagavat, Zheng Lu, Feng-Chien Tsai, Hong-Huei Huang
  • PROCESS FOR PREPARING INGOT HAVING REDUCED DISTORTION AT LATE BODY LENGTH
    Publication number: 20210269936
    Abstract: A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.
    Type: Application
    Filed: April 3, 2020
    Publication date: September 2, 2021
    Inventors: Tapas Jain, Sumeet S. Bhagavat, Zheng Lu, Feng-Chien Tsai, Hong-Huei Huang
  • PROCESS FOR PREPARING INGOT HAVING REDUCED DISTORTION AT LATE BODY LENGTH
    Publication number: 20200325594
    Abstract: A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.
    Type: Application
    Filed: April 3, 2020
    Publication date: October 15, 2020
    Inventors: Tapas Jain, Sumeet S. Bhagavat, Zheng Lu, Feng-Chien Tsai, Hong-Huei Huang