Patents by Inventor Hong Jongill

Hong Jongill has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetoresistive film, magnetoresistive head, information regeneration apparatus and magnetoresistive film manufacture method
    Patent number: 6759120
    Abstract: There is disclosed a magnetoresistive film in which increase of a coupling field accompanying thickness reduction of a middle layer is inhibited. The magnetoresistive film is a multilayered film including a pinned layer 3 having magnetization whose direction is fixed, a nonmagnetic middle layer 4 formed on the pinned layer, and a free layer 5 formed on the middle layer and provided with magnetization whose direction changes in accordance with an external magnetic field, the magnetoresistive film indicates a magnitude of resistance in accordance with an angle formed by the magnetization direction of the pinned layer and the magnetization direction of the free layer, and a copper oxide layer 7 of an oxide including a copper element is formed directly on the free layer, or on the free layer via an oxide layer 6 of a material fabricated by oxidizing a material constituting the free layer.
    Type: Grant
    Filed: November 30, 2000
    Date of Patent: July 6, 2004
    Assignee: Fujitsu Limited
    Inventors: Hong Jongill, Kenichi Aoshima, Kenji Noma, Junichi Kane, Hitoshi Kanai
  • Magnetoresistive film, magnetoresistive head, information regeneration apparatus and magnetoresistive film manufacture method
    Publication number: 20010014412
    Abstract: There is disclosed a magnetoresistive film in which increase of a coupling field accompanying thickness reduction of a middle layer is inhibited. The magnetoresistive film is a multilayered film including a pinned layer 3 having magnetization whose direction is fixed, a nonmagnetic middle layer 4 formed on the pinned layer, and a free layer 5 formed on the middle layer and provided with magnetization whose direction changes in accordance with an external magnetic field, the magnetoresistive film indicates a magnitude of resistance in accordance with an angle formed by the magnetization direction of the pinned layer and the magnetization direction of the free layer, and a copper oxide layer 7 of an oxide including a copper element is formed directly on the free layer, or on the free layer via an oxide layer 6 of a material fabricated by oxidizing a material constituting the free layer.
    Type: Application
    Filed: November 30, 2000
    Publication date: August 16, 2001
    Applicant: FUJITSU LIMITED
    Inventors: Hong Jongill, Kenichi Aoshima, Kenji Noma, Junichi Kane, Hitoshi Kanai