Patents by Inventor Hong-Joo Baek

Hong-Joo Baek has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Tungsten layer formation method for semiconductor device and semiconductor device using the same
    Patent number: 6579794
    Abstract: A tungsten layer formation method for a semiconductor device reduces resistivity of the tungsten layer without requiring modification of the conventional manufacturing system. The method includes treating the surface of a barrier metal layer formed over a semiconductor substrate in a pressure environment of over 40 Torr using SiH4 gas; forming a tungsten seed layer on the treated barrier metal layer using WF6 and SiH4 gases, a mixing ratio {WF6}/{SiH4} of the gases being less than or equal to one; and forming a tungsten layer on the treated barrier metal layer using WF6 gas, the treated barrier metal layer having the tungsten seed layer formed thereon.
    Type: Grant
    Filed: July 20, 1999
    Date of Patent: June 17, 2003
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seong-tae Oh, Kyung-tae Kim, Hong-Joo Baek, Hun-ki Kim
  • Tungsten layer formation method for semiconductor device and semiconductor device using the same
    Patent number: 6404054
    Abstract: A tungsten layer formation method for a semiconductor device reduces resistivity of the tungsten layer without requiring modification of the conventional manufacturing system. The method includes treating the surface of a barrier metal layer formed over a semiconductor substrate in a pressure environment of over 40 Torr using SiH4 gas; forming a tungsten seed layer on the treated barrier metal layer using WF6 and SiH4 gases, a mixing ratio {WF6}/{SiH4} of the gases being less than or equal to one; and forming a tungsten layer on the treated barrier metal layer using WF6 gas, the treated barrier metal layer having the tungsten seed layer formed thereon.
    Type: Grant
    Filed: July 5, 2000
    Date of Patent: June 11, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seong-tae Oh, Kyung-tae Kim, Hong-Joo Baek, Hun-ki Kim