Abstract: The present invention relates to a substrate processing apparatus. The substrate processing apparatus according to the present invention comprises: a processing chamber; substrate susceptor, installed in the processing chamber, which rotates in connection with a rotary shaft, a plurality of substrates being disposed on the same plane thereof; a heater member located on the lower surface of the substrate susceptor; and a spraying member for spraying a gas onto the entire processing surface of the substrate at a position corresponding to each of the plurality of substrates disposed on the substrate susceptor, wherein the heater member has an inner space in which heating wires for heating the substrate susceptor are arranged in a plurality rows of verticality and horizontality in a concentric circle based on the rotary shaft of the substrate susceptor.

Abstract: Provided is a substrate processing apparatus which include a process chamber in which a plurality of substrates are accommodated to be processed, a support member mounted at the process chamber and having the same plane on which a plurality of substrate are placed, an injection member mounted opposite to the support member and including a plurality of independent baffles to independently inject the least one reactive gas and the purge gas at positions respectively corresponding to the plurality of substrates placed on the support member, and a driving unit adapted to rotate the support member or the injection member such that the baffles of the injection member sequentially revolve around the plurality of respective substrates. The injection member includes a plasma generator mounted at least one of the baffles to plasmatize a reactive gas injected to a substrate.