Patents by Inventor Hong K. Choi
Hong K. Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11839093Abstract: Apparatuses, systems, and methods are described to enhance images rendered on an Organic Light Emitting Diode (OLED) display. An OLED device is formed with a first light emitting OLED stack, a charge generating layer (CGL), a second light emitting OLED stack, and a color filter. An OLED display pixel includes three sub-pixels where each subpixel is fabricated with a separate anode and a color filter. A dielectric barrier is disposed between the separate anodes and around the perimeter of each separate anode of the three sub-pixels. When current flows to a desired sub-pixel of the three sub-pixels, lateral current flow through the CGL to adjacent sub-pixels is impeded, resulting in light generation by the desired sub-pixel and reduction in unwanted light generation at sub-pixels adjacent to the desired sub-pixel. The OLED device can include micro lenses, which collimate light thereby reducing an aperture of emitted light to increase display brightness.Type: GrantFiled: May 13, 2020Date of Patent: December 5, 2023Assignee: KOPIN CORPORATIONInventors: Boryeu Tsaur, Hong K Choi
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Patent number: 11793033Abstract: Apparatuses, systems, and methods are described to enhance images rendered on an Organic Light Emitting Diode (OLED) display. An OLED device is formed with a first light emitting OLED stack, a charge generating layer (CGL), a second light emitting OLED stack, and a color filter. An OLED display pixel includes three sub-pixels where each subpixel is fabricated with a separate anode and a color filter. A dielectric barrier is disposed between the separate anodes and around the perimeter of each separate anode of the three sub-pixels. When current flows to a desired sub-pixel of the three sub-pixels, lateral current flow through the CGL to adjacent sub-pixels is impeded, resulting in light generation by the desired sub-pixel and reduction in unwanted light generation at sub-pixels adjacent to the desired sub-pixel. The OLED device can include micro lenses, which collimate light thereby reducing an aperture of emitted light to increase display brightness.Type: GrantFiled: May 13, 2020Date of Patent: October 17, 2023Assignee: KOPIN CORPORATIONInventors: Boryeu Tsaur, Hong K. Choi
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Publication number: 20180189011Abstract: A handheld wireless display device, having at least SVGA-type resolution, includes a wireless interface, such as Bluetooth™, WiFi™, Wimax™, cellular or satellite, to allow the device to utilize a number of different hosts, such as a cell phone, personal computer, media player. The display may be monocular or binocular. Input mechanisms, such as switches, scroll wheels, touch pads, allow selection and navigation of menus, playing media files, setting volume and screen brightness/contrast, activating host remote controls or performing other commands. The device may include MIM diodes, Hall effect sensors, or other position transducers and/or accelerometers to detect lateral movements along and rotational gestures around the X, Y and Z axes as gesture inputs and movement queues. These commands may change pages, scroll up, down or across an enlarged screen image, such as for web browsing. An embedded software driver (e.g.Type: ApplicationFiled: December 21, 2017Publication date: July 5, 2018Inventors: Jeffrey J. Jacobsen, John C. C. Fan, Hong K. Choi, Christopher Parkinson
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Patent number: 8072406Abstract: A liquid crystal display comprises a display panel that includes at least one pixel transistor, at least one pixel electrode in electrical communication with the pixel transistor, at least one common electrode, and a liquid crystal material between the pixel electrode and the common electrode. The pixel transistor includes a thin film layer of essentially single crystal silicon that has a thickness in a range of between about 100 nm and about 200 nm. The pixel electrode has a thickness in a range of between about 5 nm and about 20 nm. The common electrode has a thickness of between about 50 nm and about 200 nm.Type: GrantFiled: June 25, 2010Date of Patent: December 6, 2011Assignee: Kopin CorporationInventors: Bor-Yeu Tsaur, Hong K. Choi, Jason Lo
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Publication number: 20100259517Abstract: A liquid crystal display comprises a display panel that includes at least one pixel transistor, at least one pixel electrode in electrical communication with the pixel transistor, at least one common electrode, and a liquid crystal material between the pixel electrode and the common electrode. The pixel transistor includes a thin film layer of essentially single crystal silicon that has a thickness in a range of between about 100 nm and about 200 nm. The pixel electrode has a thickness in a range of between about 5 nm and about 20 nm. The common electrode has a thickness of between about 50 nm and about 200 nm.Type: ApplicationFiled: June 25, 2010Publication date: October 14, 2010Applicant: Kopin CorporationInventors: Bor-Yeu Tsaur, Hong K. Choi, Jason Lo
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Patent number: 7768611Abstract: A liquid crystal display comprises a display panel that includes at least one pixel transistor, at least one pixel electrode in electrical communication with the pixel transistor, at least one common electrode, and a liquid crystal material between the pixel electrode and the common electrode. The pixel transistor includes a thin film layer of essentially single crystal silicon that has a thickness in a range of between about 100 nm and about 200 nm. The pixel electrode has a thickness in a range of between about 5 nm and about 20 nm. The common electrode has a thickness of between about 50 nm and about 200 nm.Type: GrantFiled: August 16, 2007Date of Patent: August 3, 2010Assignee: Kopin CorporationInventors: Bor-Yeu Tsaur, Hong K. Choi, Jason Lo
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Patent number: 7122841Abstract: A semiconductor device includes a substrate having a first major surface; a semiconductor device structure over the first surface of the substrate, the device structure comprising an n-type semiconductor layer, and a p-type semiconductor layer over the n-type semiconductor layer; a p-side electrode having a first and a second surface, wherein the first surface is in electrical contact with the p-type semiconductor layer; and a p-side bonding pad over the p-side electrode. Preferably, the semiconductor device further comprises an n-side bonding pad over an n-type semiconductor layer. The p-side and n-side bonding pads each independently includes a gold layer as its top layer and a single or multiple layers of a diffusion barrier under the top gold layer. Optionally, one or more metal layers are further included under the diffusion barrier. Typically, the p-side bonding pad is formed on the p-side electrode.Type: GrantFiled: June 3, 2004Date of Patent: October 17, 2006Assignee: Kopin CorporationInventors: Tchang-Hun Oh, Hong K. Choi, John C. C. Fan, Jagdish Narayan
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Patent number: 7002180Abstract: A bonding pad for an electrode is in contact with p-type gallium nitride-based semiconductor material that includes aluminum. The bonding pad may also includes one or more metals selected from the group consisting of palladium, platinum, nickel and gold. The bonding pad can be used to attach a bonding wire to the p-electrode in a semiconductor device, such as a light-emitting diode or a laser diode without causing degradation of the light-transmission and ohmic properties of the electrode. The bonding pad may be formed of substantially the same material as an electrode in making an ohmic contact with n-type gallium nitride-based semiconductor material (n-electrode). This allows the bonding pad and the n-electrode to be formed simultaneously when manufacturing a gallium nitride-based light-emitting device which substantially reduces the cost to manufacture the device.Type: GrantFiled: June 28, 2002Date of Patent: February 21, 2006Assignee: Kopin CorporationInventors: Steve Tchang-Hun Oh, Hong K. Choi, Bor-Yeu Tsaur, John C. C. Fan
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Patent number: 6881983Abstract: An optoelectronic device such as an LED or laser which produces spontaneous emission by recombination of carriers (electrons and holes) trapped in Quantum Confinement Regions formed by transverse thickness variations in Quantum Well layers of group III nitrides.Type: GrantFiled: July 26, 2002Date of Patent: April 19, 2005Assignee: Kopin CorporationInventors: Jagdish Narayan, Jinlin Ye, Schang-Jing Hon, Ken Fox, Jyh Chia Chen, Hong K. Choi, John C. C. Fan
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Patent number: 6847052Abstract: A semiconductor device includes: a substrate; an n-type semiconductor layer over the substrate, the n-type semiconductor layer having a planar top surface; a p-type semiconductor layer extending over a major portion of the n-type semiconductor layer and not extending over an exposed region of the n-type semiconductor layer located adjacent to at least one edge of the planar top surface of the n-type semiconductor layer; a first bonding pad provided on the exposed region of the n-type semiconductor layer; an electrode layer extending over the p-type semiconductor layer; and a second bonding pad on the electrode layer, the bonding pad including a central region for securing an electrical interconnect, and at least one finger-like region protruding from the central region, the finger-like region having a length extending away from the central region and a width that is substantially less than the length. A method for producing a semiconductor device also is described.Type: GrantFiled: June 17, 2003Date of Patent: January 25, 2005Assignee: Kopin CorporationInventors: John C. C. Fan, Hong K. Choi, Tchang-Hun Oh, Jyh Chia Chen, Jagdish Narayan
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Publication number: 20040262621Abstract: A semiconductor device includes a substrate having a first major surface; a semiconductor device structure over the first surface of the substrate, the device structure comprising an n-type semiconductor layer, and a p-type semiconductor layer over the n-type semiconductor layer; a p-side electrode having a first and a second surface, wherein the first surface is in electrical contact with the p-type semiconductor layer; and a p-side bonding pad over the p-side electrode. Preferably, the semiconductor device further comprises an n-side bonding pad over an n-type semiconductor layer. The p-side and n-side bonding pads each independently includes a gold layer as its top layer and a single or multiple layers of a diffusion barrier under the top gold layer. Optionally, one or more metal layers are further included under the diffusion barrier. Typically, the p-side bonding pad is formed on the p-side electrode.Type: ApplicationFiled: June 3, 2004Publication date: December 30, 2004Applicant: Kopin CorporationInventors: Tchang-hun Oh, Hong K. Choi, John C. C. Fan, Jagdish Narayan
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Patent number: 6734091Abstract: An improved electrode for a p-type gallium nitride based semiconductor material is disclosed that includes a layer of an oxidized metal and a first and a second layer of a metallic material. The electrode is formed by depositing three or more metallic layers over the p-type semiconductor layer such that at least one metallic layer is in contact with the p-type semiconductor layer. At least two of the metallic layers are then subjected to an annealing treatment in the presence of oxygen to oxidize at least one of the metallic layers to form a metal oxide. The electrodes provide good ohmic contacts to p-type gallium nitride-based semiconductor materials and, thus, lower the operating voltage of gallium nitride-based semiconductor devices.Type: GrantFiled: June 28, 2002Date of Patent: May 11, 2004Assignee: Kopin CorporationInventors: Tchang-Hun Oh, Hong K. Choi, Bor-Yeu Tsaur, John C. C. Fan, Shirong Liao, Jagdish Narayan
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Publication number: 20040077135Abstract: A semiconductor device includes: a substrate; an n-type semiconductor layer over the substrate, the n-type semiconductor layer having a planar top surface; a p-type semiconductor layer extending over a major portion of the n-type semiconductor layer and not extending over an exposed region of the n-type semiconductor layer located adjacent to at least one edge of the planar top surface of the n-type semiconductor layer; a first bonding pad provided on the exposed region of the n-type semiconductor layer; an electrode layer extending over the p-type semiconductor layer; and a second bonding pad on the electrode layer, the bonding pad including a central region for securing an electrical interconnect, and at least one finger-like region protruding from the central region, the finger-like region having a length extending away from the central region and a width that is substantially less than the length. A method for producing a semiconductor device also is described.Type: ApplicationFiled: June 17, 2003Publication date: April 22, 2004Applicant: Kopin CorporationInventors: John C.C. Fan, Hong K. Choi, Tchang-Hun Oh, Jyh Chia Chen, Jagdish Narayan
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Publication number: 20040000671Abstract: An improved electrode for a p-type gallium nitride based semiconductor material is disclosed that includes a layer of an oxidized metal and a first and a second layer of a metallic material. The electrode is formed by depositing three or more metallic layers over the p-type semiconductor layer such that at least one metallic layer is in contact with the p-type semiconductor layer. At least two of the metallic layers are then subjected to an annealing treatment in the presence of oxygen to oxidize at least one of the metallic layers to form a metal oxide. The electrodes provide good ohmic contacts to p-type gallium nitride-based semiconductor materials and, thus, lower the operating voltage of gallium nitride-based semiconductor devices.Type: ApplicationFiled: June 28, 2002Publication date: January 1, 2004Applicant: Kopin CorporationInventors: Tchang-Hun Oh, Hong K. Choi, Bor-Yeu Tsaur, John C.C. Fan, Shirong Liao, Jagdish Narayan
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Publication number: 20040000670Abstract: A bonding pad for an electrode is in contact with p-type gallium nitride-based semiconductor material that includes aluminum. The bonding pad may also includes one or more metals selected from the group consisting of palladium, platinum, nickel and gold. The bonding pad can be used to attach a bonding wire to the p-electrode in a semiconductor device, such as a light-emitting diode or a laser diode without causing degradation of the light-transmission and ohmic properties of the electrode. The bonding pad may be formed of substantially the same material as an electrode in making an ohmic contact with n-type gallium nitride-based semiconductor material (n-electrode). This allows the bonding pad and the n-electrode to be formed simultaneously when manufacturing a gallium nitride-based light-emitting device which substantially reduces the cost to manufacture the device.Type: ApplicationFiled: June 28, 2002Publication date: January 1, 2004Applicant: Kopin CorporationInventors: Steve Tchang-Hun Oh, Hong K. Choi, Bor-Yeu Tsaur, John C.C. Fan
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Publication number: 20040000672Abstract: High-efficiency light-emitting diode structures are disclosed which reduce the current flow directly underneath the thick p-bonding pad. The devices can further include a light-reflecting layer at the back of the substrate.Type: ApplicationFiled: June 28, 2002Publication date: January 1, 2004Applicant: Kopin CorporationInventors: John C.C. Fan, Hong K. Choi, Steve Tchang-hun Oh
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Publication number: 20030222263Abstract: Light-emitting diodes (LEDs) have at least one light-emitting surface that is patterned, thereby improving the ratio of internal to external efficiency. In one embodiment, the light-emitting diodes are gallium nitride based group III-V diodes that have a multiple quantum-well active region between an n-doped GaN layer and a p-doped GaN layer. The n-doped GaN layer has a surface that is patterned.Type: ApplicationFiled: June 4, 2002Publication date: December 4, 2003Applicant: Kopin CorporationInventor: Hong K. Choi
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Publication number: 20030160246Abstract: An optoelectronic device such as an LED or laser which produces spontaneous emission by recombination of carriers (electrons and holes) trapped in Quantum Confinement Regions formed by transverse thickness variations in Quantum Well layers of group III nitrides.Type: ApplicationFiled: July 26, 2002Publication date: August 28, 2003Inventors: Jagdish Narayan, Jinlin Ye, Schang-Jing Hon, Ken Fox, Jyh Chia Chen, Hong K. Choi, John C. C. Fan
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Publication number: 20030160229Abstract: An optoelectronic device such as an LED or laser which produces spontaneous emission by recombination of carriers (electrons and holes) trapped in Quantum Confinement Regions formed by transverse thickness variations in Quantum Well layers of group III nitrides.Type: ApplicationFiled: February 25, 2002Publication date: August 28, 2003Applicant: Kopin CorporationInventors: Jagdish Narayan, Jinlin Ye, Schang-Jing Hon, Ken Fox, Jyh Chia Chen, Hong K. Choi, John C. C. Fan
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Publication number: 20020177251Abstract: Compound semiconductor material is irradiated with x-ray radiation to activate a dopant material. Active carrier concentration efficiency may be improved over known methods, including conventional thermal annealing. The method may be employed for III-V group compounds, including GaN-based semiconductors, doped with p-type material to form low resistivity p-GaN. The method may be further employed to manufacture GaN-based LEDs, including blue LEDs, having improved forward bias voltage and light-emitting efficiency.Type: ApplicationFiled: May 25, 2001Publication date: November 28, 2002Applicant: Kopin CorporationInventors: Jinlin Ye, Jyh-Chia Chen, Shirong Liao, Hong K. Choi, John C.C. Fan