Patents by Inventor Hong K. Choi

Hong K. Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180189011
    Abstract: A handheld wireless display device, having at least SVGA-type resolution, includes a wireless interface, such as Bluetooth™, WiFi™, Wimax™, cellular or satellite, to allow the device to utilize a number of different hosts, such as a cell phone, personal computer, media player. The display may be monocular or binocular. Input mechanisms, such as switches, scroll wheels, touch pads, allow selection and navigation of menus, playing media files, setting volume and screen brightness/contrast, activating host remote controls or performing other commands. The device may include MIM diodes, Hall effect sensors, or other position transducers and/or accelerometers to detect lateral movements along and rotational gestures around the X, Y and Z axes as gesture inputs and movement queues. These commands may change pages, scroll up, down or across an enlarged screen image, such as for web browsing. An embedded software driver (e.g.
    Type: Application
    Filed: December 21, 2017
    Publication date: July 5, 2018
    Inventors: Jeffrey J. Jacobsen, John C. C. Fan, Hong K. Choi, Christopher Parkinson
  • Patent number: 8072406
    Abstract: A liquid crystal display comprises a display panel that includes at least one pixel transistor, at least one pixel electrode in electrical communication with the pixel transistor, at least one common electrode, and a liquid crystal material between the pixel electrode and the common electrode. The pixel transistor includes a thin film layer of essentially single crystal silicon that has a thickness in a range of between about 100 nm and about 200 nm. The pixel electrode has a thickness in a range of between about 5 nm and about 20 nm. The common electrode has a thickness of between about 50 nm and about 200 nm.
    Type: Grant
    Filed: June 25, 2010
    Date of Patent: December 6, 2011
    Assignee: Kopin Corporation
    Inventors: Bor-Yeu Tsaur, Hong K. Choi, Jason Lo
  • Publication number: 20100259517
    Abstract: A liquid crystal display comprises a display panel that includes at least one pixel transistor, at least one pixel electrode in electrical communication with the pixel transistor, at least one common electrode, and a liquid crystal material between the pixel electrode and the common electrode. The pixel transistor includes a thin film layer of essentially single crystal silicon that has a thickness in a range of between about 100 nm and about 200 nm. The pixel electrode has a thickness in a range of between about 5 nm and about 20 nm. The common electrode has a thickness of between about 50 nm and about 200 nm.
    Type: Application
    Filed: June 25, 2010
    Publication date: October 14, 2010
    Applicant: Kopin Corporation
    Inventors: Bor-Yeu Tsaur, Hong K. Choi, Jason Lo
  • Patent number: 7768611
    Abstract: A liquid crystal display comprises a display panel that includes at least one pixel transistor, at least one pixel electrode in electrical communication with the pixel transistor, at least one common electrode, and a liquid crystal material between the pixel electrode and the common electrode. The pixel transistor includes a thin film layer of essentially single crystal silicon that has a thickness in a range of between about 100 nm and about 200 nm. The pixel electrode has a thickness in a range of between about 5 nm and about 20 nm. The common electrode has a thickness of between about 50 nm and about 200 nm.
    Type: Grant
    Filed: August 16, 2007
    Date of Patent: August 3, 2010
    Assignee: Kopin Corporation
    Inventors: Bor-Yeu Tsaur, Hong K. Choi, Jason Lo
  • Patent number: 7122841
    Abstract: A semiconductor device includes a substrate having a first major surface; a semiconductor device structure over the first surface of the substrate, the device structure comprising an n-type semiconductor layer, and a p-type semiconductor layer over the n-type semiconductor layer; a p-side electrode having a first and a second surface, wherein the first surface is in electrical contact with the p-type semiconductor layer; and a p-side bonding pad over the p-side electrode. Preferably, the semiconductor device further comprises an n-side bonding pad over an n-type semiconductor layer. The p-side and n-side bonding pads each independently includes a gold layer as its top layer and a single or multiple layers of a diffusion barrier under the top gold layer. Optionally, one or more metal layers are further included under the diffusion barrier. Typically, the p-side bonding pad is formed on the p-side electrode.
    Type: Grant
    Filed: June 3, 2004
    Date of Patent: October 17, 2006
    Assignee: Kopin Corporation
    Inventors: Tchang-Hun Oh, Hong K. Choi, John C. C. Fan, Jagdish Narayan
  • Patent number: 7002180
    Abstract: A bonding pad for an electrode is in contact with p-type gallium nitride-based semiconductor material that includes aluminum. The bonding pad may also includes one or more metals selected from the group consisting of palladium, platinum, nickel and gold. The bonding pad can be used to attach a bonding wire to the p-electrode in a semiconductor device, such as a light-emitting diode or a laser diode without causing degradation of the light-transmission and ohmic properties of the electrode. The bonding pad may be formed of substantially the same material as an electrode in making an ohmic contact with n-type gallium nitride-based semiconductor material (n-electrode). This allows the bonding pad and the n-electrode to be formed simultaneously when manufacturing a gallium nitride-based light-emitting device which substantially reduces the cost to manufacture the device.
    Type: Grant
    Filed: June 28, 2002
    Date of Patent: February 21, 2006
    Assignee: Kopin Corporation
    Inventors: Steve Tchang-Hun Oh, Hong K. Choi, Bor-Yeu Tsaur, John C. C. Fan
  • Patent number: 6881983
    Abstract: An optoelectronic device such as an LED or laser which produces spontaneous emission by recombination of carriers (electrons and holes) trapped in Quantum Confinement Regions formed by transverse thickness variations in Quantum Well layers of group III nitrides.
    Type: Grant
    Filed: July 26, 2002
    Date of Patent: April 19, 2005
    Assignee: Kopin Corporation
    Inventors: Jagdish Narayan, Jinlin Ye, Schang-Jing Hon, Ken Fox, Jyh Chia Chen, Hong K. Choi, John C. C. Fan
  • Patent number: 6847052
    Abstract: A semiconductor device includes: a substrate; an n-type semiconductor layer over the substrate, the n-type semiconductor layer having a planar top surface; a p-type semiconductor layer extending over a major portion of the n-type semiconductor layer and not extending over an exposed region of the n-type semiconductor layer located adjacent to at least one edge of the planar top surface of the n-type semiconductor layer; a first bonding pad provided on the exposed region of the n-type semiconductor layer; an electrode layer extending over the p-type semiconductor layer; and a second bonding pad on the electrode layer, the bonding pad including a central region for securing an electrical interconnect, and at least one finger-like region protruding from the central region, the finger-like region having a length extending away from the central region and a width that is substantially less than the length. A method for producing a semiconductor device also is described.
    Type: Grant
    Filed: June 17, 2003
    Date of Patent: January 25, 2005
    Assignee: Kopin Corporation
    Inventors: John C. C. Fan, Hong K. Choi, Tchang-Hun Oh, Jyh Chia Chen, Jagdish Narayan
  • Publication number: 20040262621
    Abstract: A semiconductor device includes a substrate having a first major surface; a semiconductor device structure over the first surface of the substrate, the device structure comprising an n-type semiconductor layer, and a p-type semiconductor layer over the n-type semiconductor layer; a p-side electrode having a first and a second surface, wherein the first surface is in electrical contact with the p-type semiconductor layer; and a p-side bonding pad over the p-side electrode. Preferably, the semiconductor device further comprises an n-side bonding pad over an n-type semiconductor layer. The p-side and n-side bonding pads each independently includes a gold layer as its top layer and a single or multiple layers of a diffusion barrier under the top gold layer. Optionally, one or more metal layers are further included under the diffusion barrier. Typically, the p-side bonding pad is formed on the p-side electrode.
    Type: Application
    Filed: June 3, 2004
    Publication date: December 30, 2004
    Applicant: Kopin Corporation
    Inventors: Tchang-hun Oh, Hong K. Choi, John C. C. Fan, Jagdish Narayan
  • Patent number: 6734091
    Abstract: An improved electrode for a p-type gallium nitride based semiconductor material is disclosed that includes a layer of an oxidized metal and a first and a second layer of a metallic material. The electrode is formed by depositing three or more metallic layers over the p-type semiconductor layer such that at least one metallic layer is in contact with the p-type semiconductor layer. At least two of the metallic layers are then subjected to an annealing treatment in the presence of oxygen to oxidize at least one of the metallic layers to form a metal oxide. The electrodes provide good ohmic contacts to p-type gallium nitride-based semiconductor materials and, thus, lower the operating voltage of gallium nitride-based semiconductor devices.
    Type: Grant
    Filed: June 28, 2002
    Date of Patent: May 11, 2004
    Assignee: Kopin Corporation
    Inventors: Tchang-Hun Oh, Hong K. Choi, Bor-Yeu Tsaur, John C. C. Fan, Shirong Liao, Jagdish Narayan
  • Publication number: 20040077135
    Abstract: A semiconductor device includes: a substrate; an n-type semiconductor layer over the substrate, the n-type semiconductor layer having a planar top surface; a p-type semiconductor layer extending over a major portion of the n-type semiconductor layer and not extending over an exposed region of the n-type semiconductor layer located adjacent to at least one edge of the planar top surface of the n-type semiconductor layer; a first bonding pad provided on the exposed region of the n-type semiconductor layer; an electrode layer extending over the p-type semiconductor layer; and a second bonding pad on the electrode layer, the bonding pad including a central region for securing an electrical interconnect, and at least one finger-like region protruding from the central region, the finger-like region having a length extending away from the central region and a width that is substantially less than the length. A method for producing a semiconductor device also is described.
    Type: Application
    Filed: June 17, 2003
    Publication date: April 22, 2004
    Applicant: Kopin Corporation
    Inventors: John C.C. Fan, Hong K. Choi, Tchang-Hun Oh, Jyh Chia Chen, Jagdish Narayan
  • Publication number: 20040000671
    Abstract: An improved electrode for a p-type gallium nitride based semiconductor material is disclosed that includes a layer of an oxidized metal and a first and a second layer of a metallic material. The electrode is formed by depositing three or more metallic layers over the p-type semiconductor layer such that at least one metallic layer is in contact with the p-type semiconductor layer. At least two of the metallic layers are then subjected to an annealing treatment in the presence of oxygen to oxidize at least one of the metallic layers to form a metal oxide. The electrodes provide good ohmic contacts to p-type gallium nitride-based semiconductor materials and, thus, lower the operating voltage of gallium nitride-based semiconductor devices.
    Type: Application
    Filed: June 28, 2002
    Publication date: January 1, 2004
    Applicant: Kopin Corporation
    Inventors: Tchang-Hun Oh, Hong K. Choi, Bor-Yeu Tsaur, John C.C. Fan, Shirong Liao, Jagdish Narayan
  • Publication number: 20040000672
    Abstract: High-efficiency light-emitting diode structures are disclosed which reduce the current flow directly underneath the thick p-bonding pad. The devices can further include a light-reflecting layer at the back of the substrate.
    Type: Application
    Filed: June 28, 2002
    Publication date: January 1, 2004
    Applicant: Kopin Corporation
    Inventors: John C.C. Fan, Hong K. Choi, Steve Tchang-hun Oh
  • Publication number: 20040000670
    Abstract: A bonding pad for an electrode is in contact with p-type gallium nitride-based semiconductor material that includes aluminum. The bonding pad may also includes one or more metals selected from the group consisting of palladium, platinum, nickel and gold. The bonding pad can be used to attach a bonding wire to the p-electrode in a semiconductor device, such as a light-emitting diode or a laser diode without causing degradation of the light-transmission and ohmic properties of the electrode. The bonding pad may be formed of substantially the same material as an electrode in making an ohmic contact with n-type gallium nitride-based semiconductor material (n-electrode). This allows the bonding pad and the n-electrode to be formed simultaneously when manufacturing a gallium nitride-based light-emitting device which substantially reduces the cost to manufacture the device.
    Type: Application
    Filed: June 28, 2002
    Publication date: January 1, 2004
    Applicant: Kopin Corporation
    Inventors: Steve Tchang-Hun Oh, Hong K. Choi, Bor-Yeu Tsaur, John C.C. Fan
  • Publication number: 20030222263
    Abstract: Light-emitting diodes (LEDs) have at least one light-emitting surface that is patterned, thereby improving the ratio of internal to external efficiency. In one embodiment, the light-emitting diodes are gallium nitride based group III-V diodes that have a multiple quantum-well active region between an n-doped GaN layer and a p-doped GaN layer. The n-doped GaN layer has a surface that is patterned.
    Type: Application
    Filed: June 4, 2002
    Publication date: December 4, 2003
    Applicant: Kopin Corporation
    Inventor: Hong K. Choi
  • Publication number: 20030160229
    Abstract: An optoelectronic device such as an LED or laser which produces spontaneous emission by recombination of carriers (electrons and holes) trapped in Quantum Confinement Regions formed by transverse thickness variations in Quantum Well layers of group III nitrides.
    Type: Application
    Filed: February 25, 2002
    Publication date: August 28, 2003
    Applicant: Kopin Corporation
    Inventors: Jagdish Narayan, Jinlin Ye, Schang-Jing Hon, Ken Fox, Jyh Chia Chen, Hong K. Choi, John C. C. Fan
  • Publication number: 20030160246
    Abstract: An optoelectronic device such as an LED or laser which produces spontaneous emission by recombination of carriers (electrons and holes) trapped in Quantum Confinement Regions formed by transverse thickness variations in Quantum Well layers of group III nitrides.
    Type: Application
    Filed: July 26, 2002
    Publication date: August 28, 2003
    Inventors: Jagdish Narayan, Jinlin Ye, Schang-Jing Hon, Ken Fox, Jyh Chia Chen, Hong K. Choi, John C. C. Fan
  • Publication number: 20020177251
    Abstract: Compound semiconductor material is irradiated with x-ray radiation to activate a dopant material. Active carrier concentration efficiency may be improved over known methods, including conventional thermal annealing. The method may be employed for III-V group compounds, including GaN-based semiconductors, doped with p-type material to form low resistivity p-GaN. The method may be further employed to manufacture GaN-based LEDs, including blue LEDs, having improved forward bias voltage and light-emitting efficiency.
    Type: Application
    Filed: May 25, 2001
    Publication date: November 28, 2002
    Applicant: Kopin Corporation
    Inventors: Jinlin Ye, Jyh-Chia Chen, Shirong Liao, Hong K. Choi, John C.C. Fan
  • Patent number: 6479313
    Abstract: Compound semiconductor material is irradiated with x-ray radiation to activate a dopant material. Active carrier concentration efficiency may be improved over known methods, including conventional thermal annealing. The method may be employed for III-V group compounds, including GaN-based semiconductors, doped with p-type material to form low resistivity p-GaN. The method may be further employed to manufacture GaN-based LEDs, including blue LEDs, having improved forward bias voltage and light-emitting efficiency.
    Type: Grant
    Filed: May 25, 2001
    Date of Patent: November 12, 2002
    Assignee: Kopin Corporation
    Inventors: Jinlin Ye, Jyh-Chia Chen, Shirong Liao, Hong K. Choi, John C. C. Fan
  • Patent number: 5409830
    Abstract: A novel E. coli strain which can produce L-phenylalanine and is resistant to high osmotic pressure and a process for producing L-phenylalanine by use of the novel E. coli (KCCM 10,016) are disclosed.
    Type: Grant
    Filed: June 21, 1994
    Date of Patent: April 25, 1995
    Assignee: Miwon Co. Ltd.
    Inventors: Byung L. Lim, Hong Rhym, Jin H. Lee, Tae Y. Choi, E. Nam Hwang, Hong K. Choi