Patents by Inventor Hong K. Kim

Hong K. Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5453856
    Abstract: A liquid crystal display which can decrease parasitic capacitance developing at the crossing points of gate bus lines and data bus lines and can improve step coverage of a data bus line at the crossing point, comprising an insulating transparent substrate, a plurality of islandic conductive layers formed at the crossing points of the gate; lines and data lines on the insulating transparent substrate, a plurality of the gate lines formed on the substrate connecting opposing edges in one direction of each conductive layer, and a plurality of the data lines crossing above the conductive layers perpendicular to each gate line, isolated from conduction materials and gate lines.
    Type: Grant
    Filed: December 9, 1993
    Date of Patent: September 26, 1995
    Assignee: Goldstar Co., Ltd.
    Inventor: Hong K. Kim
  • Patent number: 5362661
    Abstract: The method comprising the steps of: depositing a semiconductor layer serving as an active layer, a first gate insulation film and an second gate insulation film on an insulation-transparent substrate, in this order; patterning the second gate insulation film using a mask for the patterning of an active region so that it is remained merely at the active region; oxidizing the semiconductor layer except for the active region using the patterned second gate insulation film as an oxidization mask, to isolate the active region from the other portion; forming a gate electrode on the second gate insulation film corresponding to the upper side of the defined active region; implanting impurity-ions in the semiconductor layer using the gate electrode as an ion-implantation mask to form a source region and a drain region; forming a protection film on the whole exposed surface of the resultant structure; forming contact holes in the protection layer so that the source region and the drain region are exposed; and forming a
    Type: Grant
    Filed: November 15, 1993
    Date of Patent: November 8, 1994
    Assignee: Gold Star Co., Ltd.
    Inventor: Hong K. Kim