Patents by Inventor Hong-ku Paik

Hong-ku Paik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for fabricating integrated circuit capacitors including barrier layers having grain boundary filling material
    Patent number: 6180447
    Abstract: A barrier layer is included in an integrated circuit capacitor, between a conductive plug and a lower capacitor electrode. The barrier layer includes refractory metal and grain boundary filling material. The grain boundary filling material preferably is Ce, Zr, Y, Th, Hf, La, Al and/or oxides thereof, and is preferably less that 20 atomic percent of the barrier layer. The barrier layer can reduce and preferably prevent diffusion of oxygen, and can thereby reduce the leakage current and oxidation of the integrated circuit capacitor.
    Type: Grant
    Filed: December 30, 1998
    Date of Patent: January 30, 2001
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang-soo Park, Sang-in Lee, Hong-ku Paik
  • Integrated circuit capacitors including barrier layers having grain boundary filling material
    Patent number: 5892254
    Abstract: A barrier layer is included in an integrated circuit capacitor, between a conductive plug and a lower capacitor electrode. The barrier layer includes refractory metal and grain boundary filling material. The grain boundary filling material preferably is Ce, Zr, Y, Th, Hf, La, Al and/or oxides thereof, and is preferably less that 20 atomic percent of the barrier layer. The barrier layer can reduce and preferably prevent diffusion of oxygen, and can thereby reduce the leakage current and oxidation of the integrated circuit capacitor.
    Type: Grant
    Filed: September 30, 1997
    Date of Patent: April 6, 1999
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang-soo Park, Sang-in Lee, Hong-ku Paik