Abstract: A memory device includes adjacent first and second memory blocks, divided by a slit, in which a cell region and a connection region are divided in a direction perpendicular to the adjacent direction. The slit has a first width between the cell region of the first memory block and the cell region of the second memory block, has the first width between the connection region of the first memory block and the connection region of the second memory block, and has a second width wider than the first width in a region where the cell region and the connection region of the first memory block are adjacent to each other and the cell region and the connection region of the second memory block are adjacent to each other.