Abstract: A positive electrode active material for a secondary battery includes a lithium composite transition metal oxide including nickel (Ni), cobalt (Co), and manganese (Mn), wherein the lithium composite transition metal oxide has a layered crystal structure of space group R3m, includes the nickel (Ni) in an amount of 60 mol % or less based on a total amount of transition metals, includes the cobalt (Co) in an amount greater than an amount of the manganese (Mn), and is composed of single particles.

Abstract: A display device includes: a blue color filter layer in a blue transmission region of an upper substrate, and including first scattering particles; a green color filter layer in a green transmission region of the upper substrate, and including second scattering particles; a red color filter layer in a red transmission region of the upper substrate; a partition wall on the upper substrate and defining a blue transmission opening, a green transmission opening, and a red transmission opening, which overlap the blue transmission region, the green transmission region, and the red transmission region, respectively; a color conversion layer including red color conversion particles and third scattering particles, and accommodated in the red transmission opening; a light emitting element layer on a lower substrate facing the upper substrate; and a filling material between the upper substrate and the lower substrate.

Abstract: A bonding pad structure for a semiconductor device includes a first lower metal layer beneath a second upper metal layer in a bonding region of the device. The lower metal layer is formed such that the metal of the lower metal layer is absent from the bonding region. As a result, if damage occurs to the structure during procedures such as probing or bonding at the bonding region, the lower metal is not exposed to the environment. Oxidation of the lower metal layer by exposure to the environment is prevented, thus improving reliability of the device.

Abstract: A semiconductor device and fabrication method thereof protect an overgrown metal silicide layer from external damage. The semiconductor device includes: isolation regions formed on a substrate; source/drain regions in the substrate between the isolation regions; a first interlayer insulating film on the substrate, the isolation regions and the source/drain regions; contact pads vertically penetrating the first interlayer insulating film and electrically connected to the source/drain regions; a second interlayer insulating film on the first interlayer insulating film and the contact pads; a metal silicide region selectively formed on the contact pads at a vertical position that is lower than an upper surface of the first interlayer insulating film; and a contact plug vertically penetrating the second interlayer insulating film and electrically connected to the metal silicide region.

Abstract: A chemical mechanical polishing apparatus includes a polishing pad on which a wafer requiring planarization is placed, a conditioning disc having an abrasive surface for conditioning the polishing pad, a tank containing de-ionized water in which the conditioning disc soaks while standing by, and a cleaner for cleaning the conditioning disc. The conditioning disc cleaner is disposed in the tank of de-ionized water to remove polishing impurities from an abrasive surface of the conditioning disc. The cleaner may include a brush having bristles against which the abrasive surface of the conditioning disc is placed when it is lowered into the tank. In operation, after the wafer is polished, an abrasive surface of the conditioning disc is run over the upper surface of the polishing pad to condition the surface of the polishing pad. Then the conditioning disc is moved off of the upper surface of the polishing pad and to a stand-by position in which the abrasive surface of the disc is submerged in a liquid.

Abstract: A gate electrode conductive layer is formed on an active region that is recessed relative to field oxide layers so as to define a damascene structure. The gate electrode conductive layer is formed on the active region but is not formed on a field region so that the thickness of an interlayer insulation layer deposited in a succeeding process is reduced, thereby reducing or preventing voids within the interlayer insulation layer. A polysilicon is formed on the bottom of the active region by selective epitaxial growth, thereby minimizing the influence of micro scratches, pits or stringers occurring on the bottom of the active region.

Abstract: An insulating layer can be formed on first and second adjacent regions of an integrated circuit having a first step difference therebetween, the first and second regions having first and second respective etch rates associated therewith. A recess can be formed in the insulating layer on the second region having a second step difference with the first region that is less than the first step difference to provide a portion of the insulating layer between the first and second adjacent regions having a third step difference with the first region that is greater than the second step difference. A width of the portion is selected based on a difference between the first and second etch rates.

Abstract: A chemical mechanical polishing apparatus includes a polishing pad on which a wafer requiring planarization is placed, a conditioning disc having an abrasive surface for conditioning the polishing pad, a tank containing de-ionized water in which the conditioning disc soaks while standing by, and a cleaner for cleaning the conditioning disc. The conditioning disc cleaner is disposed in the tank of de-ionized water to remove polishing impurities from an abrasive surface of the conditioning disc. The cleaner may include a brush having bristles against which the abrasive surface of the conditioning disc is placed when it is lowered into the tank. In operation, after the wafer is polished, an abrasive surface of the conditioning disc is run over the upper surface of the polishing pad to condition the surface of the polishing pad. Then the conditioning disc is moved off of the upper surface of the polishing pad and to a stand-by position in which the abrasive surface of the disc is submerged in a liquid.

Abstract: A gate electrode conductive layer is formed on an active region that is recessed relative to field oxide layers so as to define a damascene structure. The gate electrode conductive layer is formed on the active region but is not formed on a field region so that the thickness of an interlayer insulation layer deposited in a succeeding process is reduced, thereby reducing or preventing voids within the interlayer insulation layer. A polysilicon is formed on the bottom of the active region by selective epitaxial growth, thereby minimizing the influence of micro scratches, pits or stringers occurring on the bottom of the active region.

Abstract: An insulating layer can be formed on first and second adjacent regions of an integrated circuit having a first step difference therebetween, the first and second regions having first and second respective etch rates associated therewith. A recess can be formed in the insulating layer on the second region having a second step difference with the first region that is less than the first step difference to provide a portion of the insulating layer between the first and second adjacent regions having a third step difference with the first region that is greater than the second step difference. A width of the portion is selected based on a difference between the first and second etch rates.

Abstract: To form isolation trenches on a semiconductor substrate, chemical mechanical polishing (CMP) stopping patterns are formed on the substrate, and the substrate is then etched using the CMP stopping patterns as a mask. Then an insulating material is deposited to fill the trenches and cover the CMP stopping patterns. The insulating material is etched using a CMP process until the CMP stopping patterns become exposed, and is then etched using a wet or dry etching process. The wet or dry etching is continued until protruding insulating material above a surface of the substrate is a predetermined thickness, which corresponds to an amount of the insulating material that is etched during removal of the CMP stopping patterns and during intermediate processes prior to formation of a gate oxide layer.