Patents by Inventor Hong-Lae PARK

Hong-Lae PARK has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHODS OF MANUFACTURING MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICES
    Publication number: 20150207064
    Abstract: A MRAM device may include a fixed layer pattern on a substrate, a first tunnel barrier layer pattern on the fixed layer pattern, a free layer pattern on the first tunnel barrier layer pattern, a second tunnel barrier layer pattern on the free layer pattern, the second tunnel barrier layer pattern including a metal oxide, and a capping layer pattern on the second tunnel barrier layer pattern. The capping layer pattern including a metal may have an oxide layer formation energy lower than the oxide layer formation energy of tantalum.
    Type: Application
    Filed: October 3, 2014
    Publication date: July 23, 2015
    Inventors: Joon-Myoung LEE, Hong-Lae PARK, Sang-Yong KIM, Woo-Chang LIM