Abstract: A method of fabricating a semiconductor device, the method comprising: forming a photoresist layer on an upper surface of a wafer; exposing a portion of the photoresist layer to light to form an exposed region of the photoresist layer and an unexposed region of the photoresist layer; etching a first portion of the exposed region by using a first developer having a first temperature; lowering a temperature of the photoresist layer by using cooling gas; and etching a second portion of the exposed region by using a second developer having a second temperature that is lower than the first temperature.

Abstract: Disclosed are methods, systems, and computer-readable medium to perform operations including: measuring a first Channel State Information Reference Signal (CSI-RS) received from a first transmission reception point (TRP) of a plurality of TRPs; measuring a second CSI-RS received from a second TRP of the plurality of TRPs; determining a time delay and a frequency offset between the first TRP and the second TRP based on the first CSI-RS and the second CSI-RS; and generating a calibration report including the determined time delay and the determined frequency offset for transmission to the first TRP and the second TRP.

Abstract: Techniques described herein can generate customized, user-based security response recommendations for users of security system(s), such as for security analysts tasked with performing responses to computing security threats. A user-based response recommendation engine can generate the user-based security response recommendations based on incident data associated with security incidents and based on historical user response data. Furthermore, user role inference techniques can optionally be used in conjunction with the user-based response recommendation engine.

Abstract: A wireless device transmits a multiple consecutive slots transmission (MCSt) via consecutive slots, wherein a quantity of the consecutive slots is based on a channel occupancy time (COT) duration of a COT.

Abstract: The present disclosure relates generally to systems and methods for providing game symbol removal operations in games. The game symbol removal operation allows a player of the gaming device to provide input regarding a set of game symbols to be removed from a first configuration of an array of cells to form a second configuration of the array of cells. A selected game symbol of the unremoved game symbols can have a higher probability of being a first game payline in the second configuration than in the first configuration. Removal of a particular game symbol can allow a player to control his or her chances of winning and alter the proposed payouts for winning distributions of game symbols.

Abstract: A vibration processing method and a computing device are provided. The method includes: obtaining a current vibration fragment and coded information of the current vibration fragment from a vibration file of media data, where the vibration file includes one or more vibration fragments, each vibration fragment corresponds to a media fragment of the media data, and the coded information of the current vibration fragment is configured for identifying a position of the current vibration fragment in the vibration file; and controlling to output a current vibration based on the coded information of the current vibration fragment, where when the current vibration is outputted, a media fragment corresponding to the current vibration fragment is outputted. As such, synchronization between vibrations and media can be ensured as much as possible, and immersive experience can be enhanced.

Abstract: A battery deterioration detection device, a method of operating a battery deterioration detection device, and a battery deterioration detection device for a vehicle are provided. The battery deterioration detection device includes a sensor to sense deterioration detection information of each of the cells included in a battery of the mobile device, an SOX estimator to generate an estimated value of each of the cells based on the deterioration detection information, a sequencer to determine whether to perform deterioration abnormal diagnosis on the battery based on at least one of the estimated value generated by the SOX estimator, an on or off state information of the battery, a stop holding time after the mobile device is stopped, and deterioration detection information of each of the cells, and a diagnoser to perform a deterioration abnormal diagnosis operation on the battery based on the diagnosis of the sequencer.

Abstract: An SSB measurement method and apparatus, user equipment, and a storage medium are provided. The SSB measurement method includes: monitoring, by UE, first information sent by a power-saving base station; and performing, by the UE, SSB measurement of a power-saving cell based on the first information, where the power-saving cell is a serving cell of the power-saving base station. The first information includes at least one of the following: a first signal formed by a second signal and a payload, the first signal explicitly carries SSB index information, and the second signal includes at least one of a PSS or an SSS; a third signal formed by a PSS and an SSS, and the third signal implicitly carries SSB index information; or a fourth signal including at least one of a PSS or an SSS, and the PSS and the SSS are in different frequency domain positions.

Abstract: A method of fabricating a semiconductor device and a device fabricated thereby, the method including sequentially stacking an interlayer insulating layer, a porous dielectric layer, a first mask layer, and a second mask layer on a substrate; etching the second mask layer to form preliminary mask patterns; etching the preliminary mask patterns to form second mask patterns; etching the first mask layer using the second mask patterns as an etch mask to form first mask patterns; etching the porous dielectric layer using the first mask patterns as an etch mask to form grooves; and forming interconnection patterns in the grooves, respectively, wherein the porous dielectric layer includes SiOCH, and the first mask layer includes carbon-free silicon oxide (SiO2).

Abstract: A floating cable connection for an offshore structure such as a floating wind turbine comprises two or more substantially parallel elongate tubes each comprising an internal passageway for accommodating a respective cable. At least one buoyant element is fixed to the tubes and support formations fixed relative to the or each buoyant element are arranged to hold the tubes in an upright orientation on the offshore structure. The buoyant element comprises a hollow housing containing at least one electrical connector such as a junction box within a watertight internal compartment. The or each connector electrically connects upper ends of the cables to each other.

Abstract: A contact-type patterning apparatus includes: a nozzle comprising an electrode configured to receive a voltage to generate an electric field toward a substrate, and configured to eject a fluid so that the fluid is connected to the substrate; a voltage supply configured to apply the voltage to the electrode; a screw-type pump configured to supply the fluid into the nozzle through a screw configured to receive power from a motor to rotate; a transfer part configured to transfer the nozzle or the substrate so that the fluid is patterned in a line shape; and a controller configured to control a level of the voltage applied through the voltage supply, an operation of the transfer part, and an operation of the pump.

Abstract: The present invention relates to compounds of formula (I), wherein R1 to R7, A1 and A2 are as described herein, and their pharmaceutically acceptable salt thereof, and compositions including the compounds and methods of using the compounds.

Abstract: A power supply system includes a mains interface; a power rail electrically connected to the mains interface; at least one alternating current (AC) device interface mounted onto the power rail, where the AC device interface is used for connecting an AC power device; and multiple direct current (DC) device interfaces mounted onto the power rail, where at least one of the multiple DC device interfaces is used for connecting an energy storage device. The DC device interface includes a first working state and a second working state. In the case where the DC device interface is configured to be in the first working state, electrical energy flows from the power rail to the energy storage device; and in the case where the DC device interface is configured to be in the second working state, the electrical energy flows from the energy storage device to the power rail.

Abstract: A first wireless device receives, during at least one of a plurality of consecutive slots, indications of assignment of sidelink resources for a physical sidelink shared channel (PSSCH), and a hybrid automatic repeat request (HARQ) feedback being enabled. The first wireless device receives a transport block (TB) in the PSSCH. The first wireless device determines, in response to the HARQ feedback being enabled, to transmit a first PSFCH comprising a first HARQ feedback of the TB. The first wireless device transmits, during a PSFCH slot, the first PSFCH via: at least one RB of the one or more RBs; and a plurality of common RBs of a first common interlace.

Abstract: The disclosure relates to a fifth generation (5G) or sixth generation (6G) communication system for supporting a higher data transmission rate. A method performed by a first node in a communication system includes receiving a first message from a second node, the first message including at least one of first configuration information or second configuration information, and transmitting a second message to a user equipment (UE), the second message including third configuration information being determined based on at least one of the first configuration information or the second configuration information.

Abstract: An operation method of a memory may include receiving a first active command and a first row address; starting a first mismatch compensation operation in a sense amplifier array for a normal cell array corresponding to the first row address and in a redundancy sense amplifier array for a redundancy cell array corresponding to the normal cell array; determining to access the normal cell array based on the first row address and repair information; deactivating the redundancy sense amplifier array for the redundancy cell array in response to a determination that the normal cell array is to be accessed; activating a word line of the normal cell array corresponding to the first row address; and sensing and amplifying, by the sense amplifier array for the normal cell array, data of memory cells corresponding to the activated word line.

Abstract: Techniques described herein can generate customized, user-based security response recommendations for users of security system(s), such as for security analysts tasked with performing responses to computing security threats. A user-based response recommendation engine can generate the user-based security response recommendations based on incident data associated with security incidents and based on historical user response data. Furthermore, user role inference techniques can optionally be used in conjunction with the user-based response recommendation engine.

Abstract: An apparatus configured to process, based on signals received from a network, beam based configuration information, where the beam based configuration information comprises configuration information for one or more individual beams received by a user equipment (UE) and operate in a discontinuous transmission (DTX) mode and/or a discontinuous reception (DRX) mode using the beam based configuration information.

Abstract: A power semiconductor device includes a drift layer of a first conductivity-type on a first conductivity-type substrate, a plurality of well regions of a second conductivity-type on the drift layer, a plurality of source regions of a first conductivity-type respectively disposed on the plurality of well regions, the plurality of well regions and the plurality of source regions comprise stacks having rounded sides, a gate electrode surrounding the stacks and filled a space between the stacks, a gate insulating layer between the stacks and the gate electrode, an interlayer insulating layer on the gate electrode, a source electrode on the interlayer insulating layer and having a plurality of contact portions extending from upper surfaces of the plurality of source regions to the plurality of well regions, and a drain electrode on the bottom of the substrate.

Abstract: Horizontal gate-all-around devices and methods of manufacturing the same are described. The hGAA devices comprise a self-aligned low-? inner spacer adjacent to the replacement metal gate. The method includes growing the source/drain epitaxial material without an inner spacer and then forming a low-? inner spacer material after dummy gate removal and nanosheet release.