Patents by Inventor Hong-Lin CHU
Hong-Lin CHU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230387856Abstract: A method for manufacturing a semiconductor device including an upper-channel implant transistor is provided. The method includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is shallowly implanted in an upper portion of the first region of the fins but not in the second regions and not in a lower portion of the first region of the fins. A gate structure extending in a second direction perpendicular to the first direction is formed overlying the first region of the fins, and source/drains are formed overlying the second regions of the fins, thereby forming an upper-channel implant transistor.Type: ApplicationFiled: July 27, 2023Publication date: November 30, 2023Inventors: Chia-Chung CHEN, Chi-Feng HUANG, Victor Chiang LIANG, Fu-Huan TSAI, Hsieh-Hung HSIEH, Tzu-Jin YEH, Han-Min TSAI, Hong-Lin CHU
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Patent number: 11791773Abstract: A method for manufacturing a semiconductor device including an upper-channel implant transistor is provided. The method includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is shallowly implanted in an upper portion of the first region of the fins but not in the second regions and not in a lower portion of the first region of the fins. A gate structure extending in a second direction perpendicular to the first direction is formed overlying the first region of the fins, and source/drains are formed overlying the second regions of the fins, thereby forming an upper-channel implant transistor.Type: GrantFiled: July 12, 2021Date of Patent: October 17, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chia-Chung Chen, Chi-Feng Huang, Victor Chiang Liang, Fu-Huan Tsai, Hsieh-Hung Hsieh, Tzu-Jin Yeh, Han-Min Tsai, Hong-Lin Chu
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Patent number: 11646312Abstract: A method for manufacturing a semiconductor device includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is implanted in the first region of the fins but not in the second regions. A gate structure overlies the first region of the fins and source/drains are formed on the second regions of the fins.Type: GrantFiled: August 16, 2021Date of Patent: May 9, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chia-Chung Chen, Chi-Feng Huang, Victor Chiang Liang, Fu-Huan Tsai, Hsieh-Hung Hsieh, Tzu-Jin Yeh, Han-Min Tsai, Hong-Lin Chu
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Publication number: 20210375862Abstract: A method for manufacturing a semiconductor device includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is implanted in the first region of the fins but not in the second regions. A gate structure overlies the first region of the fins and source/drains are formed on the second regions of the fins.Type: ApplicationFiled: August 16, 2021Publication date: December 2, 2021Inventors: Chia-Chung CHEN, Chi-Feng HUANG, Victor Chiang LIANG, Fu-Huan TSAI, Hsieh-Hung HSIEH, Tzu-Jin YEH, Han-Min TSAI, Hong-Lin CHU
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Publication number: 20210344303Abstract: A method for manufacturing a semiconductor device including an upper-channel implant transistor is provided. The method includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is shallowly implanted in an upper portion of the first region of the fins but not in the second regions and not in a lower portion of the first region of the fins. A gate structure extending in a second direction perpendicular to the first direction is formed overlying the first region of the fins, and source/drains are formed overlying the second regions of the fins, thereby forming an upper-channel implant transistor.Type: ApplicationFiled: July 12, 2021Publication date: November 4, 2021Inventors: Chia-Chung CHEN, Chi-Feng HUANG, Victor Chiang LIANG, Fu-Huan TSAI, Hsieh-Hung HSIEH, Tzu-Jin YEH, Han-Min TSAI, Hong-Lin CHU
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Patent number: 11094694Abstract: A method for manufacturing a semiconductor device includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is implanted in the first region of the fins but not in the second regions. A gate structure overlies the first region of the fins and source/drains are formed on the second regions of the fins.Type: GrantFiled: December 31, 2019Date of Patent: August 17, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chia-Chung Chen, Chi-Feng Huang, Victor Chiang Liang, Fu-Huan Tsai, Hsieh-Hung Hsieh, Tzu-Jin Yeh, Han-Min Tsai, Hong-Lin Chu
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Patent number: 11063559Abstract: A method for manufacturing a semiconductor device including an upper-channel implant transistor is provided. The method includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is shallowly implanted in an upper portion of the first region of the fins but not in the second regions and not in a lower portion of the first region of the fins. A gate structure extending in a second direction perpendicular to the first direction is formed overlying the first region of the fins, and source/drains are formed overlying the second regions of the fins, thereby forming an upper-channel implant transistor.Type: GrantFiled: June 5, 2015Date of Patent: July 13, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chia-Chung Chen, Chi-Feng Huang, Victor Chiang Liang, Fu-Huan Tsai, Hsieh-Hung Hsieh, Tzu-Jin Yeh, Han-Min Tsai, Hong-Lin Chu
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Patent number: 10879862Abstract: A method of detecting a power level of an RF signal includes driving an internal node of a power detection circuit to a DC node voltage level, generating, based on the DC node voltage level, a first component of an output voltage on an output node of the power detection circuit, receiving the RF signal on an input node of the power detection circuit, dividing the RF signal to generate a modulation signal on the internal node, and generating, by at least partially rectifying the modulation signal, a second component of the output voltage on the power detection circuit output node.Type: GrantFiled: January 31, 2020Date of Patent: December 29, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hong-Lin Chu, Hsieh-Hung Hsieh, Tzu-Jin Yeh
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Publication number: 20200169236Abstract: A method of detecting a power level of an RF signal includes driving an internal node of a power detection circuit to a DC node voltage level, generating, based on the DC node voltage level, a first component of an output voltage on an output node of the power detection circuit, receiving the RF signal on an input node of the power detection circuit, dividing the RF signal to generate a modulation signal on the internal node, and generating, by at least partially rectifying the modulation signal, a second component of the output voltage on the power detection circuit output node.Type: ApplicationFiled: January 31, 2020Publication date: May 28, 2020Inventors: Hong-Lin CHU, Hsieh-Hung HSIEH, Tzu-Jin YEH
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Publication number: 20200135730Abstract: A method for manufacturing a semiconductor device includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is implanted in the first region of the fins but not in the second regions. A gate structure overlies the first region of the fins and source/drains are formed on the second regions of the fins.Type: ApplicationFiled: December 31, 2019Publication date: April 30, 2020Inventors: Chia-Chung CHEN, Chi-Feng HUANG, Victor Chiang LIANG, Fu-Huan TSAI, Hsieh-Hung HSIEH, Tzu-Jin YEH, Han-Min TSAI, Hong-Lin CHU
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Patent number: 10554190Abstract: A transmitter circuit includes an amplifier configured to output a radio frequency (RF) signal on an output node, a power detection circuit coupled with the output node and configured to generate an output voltage having a first component based on a power level of the RF signal, and a reference voltage generator configured to generate a reference voltage. A comparator is configured to receive the output voltage and the reference voltage, an analog-to-digital converter (ADC) is coupled between the comparator and the amplifier, and the amplifier is configured to adjust the power level of the RF signal responsive to an output of the ADC.Type: GrantFiled: September 17, 2018Date of Patent: February 4, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hong-Lin Chu, Hsieh-Hung Hsieh, Tzu-Jin Yeh
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Patent number: 10529711Abstract: A method for manufacturing a semiconductor device includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is implanted in the first region of the fins but not in the second regions. A gate structure overlies the first region of the fins and source/drains are formed on the second regions of the fins.Type: GrantFiled: August 23, 2017Date of Patent: January 7, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chia-Chung Chen, Chi-Feng Huang, Victor Chiang Liang, Fu-Huan Tsai, Hsieh-Hung Hsieh, Tzu-Jin Yeh, Han-Min Tsai, Hong-Lin Chu
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Patent number: 10256783Abstract: A transmission frontend includes a modulator configured to generate a modulated signal. A first selectable path is electrically coupled to the modulator and is configured to generate a first signal having a first power level. A second selectable path is electrically coupled to the modulator and is configured to generate a second signal having a second power level. The first power level is greater than the second power level. A transformer is electrically coupled to each of the first selectable path and the second selectable path. An antenna is electrically coupled to the transformer.Type: GrantFiled: September 25, 2017Date of Patent: April 9, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hong-Lin Chu, Hsieh-Hung Hsieh, Tzu-Jin Yeh
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Publication number: 20190036503Abstract: A transmitter circuit includes an amplifier configured to output a radio frequency (RF) signal on an output node, a power detection circuit coupled with the output node and configured to generate an output voltage having a first component based on a power level of the RF signal, and a reference voltage generator configured to generate a reference voltage. A comparator is configured to receive the output voltage and the reference voltage, an analog-to-digital converter (ADC) is coupled between the comparator and the amplifier, and the amplifier is configured to adjust the power level of the RF signal responsive to an output of the ADC.Type: ApplicationFiled: September 17, 2018Publication date: January 31, 2019Inventors: Hong-Lin CHU, Hsieh Hung HSIEH, Tzu-Jin YEH
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Patent number: 10079583Abstract: A circuit includes a first device between a first input node and an internal node, a second device between a second input node and the internal node, a third device between the internal node and ground, a fourth device between the internal node and an output node, and a fifth device between the output node and ground. The second and third devices generate a direct current (DC) voltage on the internal node by dividing a bias voltage on the second input node. The fourth device generates, from the DC voltage, a first component of an output voltage on the output node. The first and third devices generate a modulation signal on the internal node by dividing a radio frequency (RF) signal on the first input node. The fifth device rectifies the modulation signal to generate a second output voltage component.Type: GrantFiled: August 22, 2017Date of Patent: September 18, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hong-Lin Chu, Hsieh-Hung Hsieh, Tzu-Jin Yeh
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Publication number: 20180212568Abstract: A transmission frontend includes a modulator configured to generate a modulated signal. A first selectable path is electrically coupled to the modulator and is configured to generate a first signal having a first power level. A second selectable path is electrically coupled to the modulator and is configured to generate a second signal having a second power level. The first power level is greater than the second power level. A transformer is electrically coupled to each of the first selectable path and the second selectable path. An antenna is electrically coupled to the transformer.Type: ApplicationFiled: September 25, 2017Publication date: July 26, 2018Inventors: Hong-Lin CHU, Hsieh-Hung HSIEH, Tzu-Jin YEH
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Publication number: 20180152161Abstract: A circuit includes a first device between a first input node and an internal node, a second device between a second input node and the internal node, a third device between the internal node and ground, a fourth device between the internal node and an output node, and a fifth device between the output node and ground. The second and third devices generate a direct current (DC) voltage on the internal node by dividing a bias voltage on the second input node. The fourth device generates, from the DC voltage, a first component of an output voltage on the output node. The first and third devices generate a modulation signal on the internal node by dividing a radio frequency (RF) signal on the first input node. The fifth device rectifies the modulation signal to generate a second output voltage component.Type: ApplicationFiled: August 22, 2017Publication date: May 31, 2018Inventors: Hong-Lin CHU, Hsieh-Hung HSIEH, Tzu-Jin YEH
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Patent number: 9929760Abstract: A tunable matching circuit for use with ultra-low power RF receivers is described to support a variety of RF communication bands. A switched-capacitor array and a switched-resistor array are used to adjust the input impedance presented by the operating characteristics of transistors in an ultra-low-power mode. An RF sensor may be used to monitor performance of the tunable matching circuit and thereby determine optimal setting of the digital control word that drives the switched-capacitor array and switched-resistor array. An effective match over a significant bandwidth is achievable. The optimal matching configuration may be updated at any time to adjust to changing operating conditions. Memory may be used to store the optimal matching configurations of the switched capacitor array and switched resistor array.Type: GrantFiled: April 14, 2016Date of Patent: March 27, 2018Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hong-Lin Chu, Hsieh-Hung Hsieh, Tzu-Jin Yeh
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Publication number: 20170352660Abstract: A method for manufacturing a semiconductor device includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is implanted in the first region of the fins but not in the second regions. A gate structure overlies the first region of the fins and source/drains are formed on the second regions of the fins.Type: ApplicationFiled: August 23, 2017Publication date: December 7, 2017Inventors: Chia-Chung Chen, Chi-Feng Huang, Victor Chiang Liang, Fu-Huan Tsai, Hsieh-Hung Hsieh, Tzu-Jin Yeh, Han-Min Tsai, Hong-Lin Chu
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Publication number: 20170302316Abstract: A tunable matching circuit for use with ultra-low power RF receivers is described to support a variety of RF communication bands. A switched-capacitor array and a switched-resistor array are used to adjust the input impedance presented by the operating characteristics of transistors in an ultra-low-power mode. An RF sensor may be used to monitor performance of the tunable matching circuit and thereby determine optimal setting of the digital control word that drives the switched-capacitor array and switched-resistor array. An effective match over a significant bandwidth is achievable. The optimal matching configuration may be updated at any time to adjust to changing operating conditions. Memory may be used to store the optimal matching configurations of the switched capacitor array and switched resistor array.Type: ApplicationFiled: April 14, 2016Publication date: October 19, 2017Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hong-Lin CHU, Hsieh-Hung HSIEH, Tzu-Jin YEH