Abstract: The present disclosure relates to a plurality of host materials, an organic electroluminescent compound, and an organic electroluminescent device comprising the same. By comprising a specific combination of host compounds and/or an organic electroluminescent compound according to the present disclosure as an organic electroluminescent material, an organic electroluminescent device having low driving voltage and/or high luminous efficiency and/or long lifespan characteristics can be provided.

Abstract: The present disclosure relates to an organic electroluminescent compound and an organic electroluminescent device comprising the same. By comprising the compound according to the present disclosure, it is possible to produce an organic electroluminescent device having improved driving voltage, power efficiency, and/or lifetime properties compared to the conventional organic electroluminescent devices.

Abstract: Disclosed are a solid electrolyte and method of manufacturing the same. The solid electrolyte may include a core including a first electrolyte represented by Chemical Formula 1, and a shell including a second electrolyte represented by Chemical Formula 2, and disposed on a surface of the core. LiaPSbX1c??[Chemical Formula 1] Here, a satisfies an equation 4?a?7, b satisfies an equation 3?b?7, c satisfies an equation 0?c?2, and X1 includes Br or I. LidPSeX2f??[Chemical Formula 2] Here, d satisfies an equation 4?d?7, e satisfies an equation 3?e?7, f satisfies an equation 0?f?2, X2 includes Cl or Br, and an ionic radius of X1 is greater than an ionic radius of X2.

Abstract: The present invention comprises: a base film on which a first element mounting part and a second element mounting part are defined; wiring patterns formed by extending from each of the first element mounting part and the second element mounting part on the base film, wherein the wiring patterns include a first terminal part in the first element mounting part and a second terminal part in the second element mounting part; and a first plating layer formed on the second terminal part, wherein the first plating layer includes a pure metal plating layer, and the first plating layer is not formed on the first terminal part.

Abstract: The present invention comprises: a base film on which a first element mounting part and a second element mounting part are defined; wiring patterns formed by extending from each of the first element mounting part and the second element mounting part on the base film, wherein the wiring patterns include a first terminal part in the first element mounting part and a second terminal part in the second element mounting part; and a first plating layer formed on the second terminal part, wherein the first plating layer includes a pure metal plating layer, and the first plating layer is not formed on the first terminal part.

Abstract: Disclosed herein is an integrated optical sub-assembly for a diplexer, which can adopt a low-price small aperture isolator by disposing an isolator closer to a ferrule, such that the isolator may be distanced from a laser diode, and so the total cost can be reduced and the construction can be simplified; and an integrated optical sub-assembly for a triplexer, which has simplified construction for reducing the manufacturing costs, and whose exterior dimension can be reduced and the manufacturing can be easier by adopting a ball lens for narrowing the beam width.

Abstract: Disclosed herein is an integrated optical sub-assembly for a diplexer, which can adopt a low-price small aperture isolator by disposing an isolator closer to a ferrule, such that the isolator may be distanced from a laser diode, and so the total cost can be reduced and the construction can be simplified; and an integrated optical sub-assembly for a triplexer, which has simplified construction for reducing the manufacturing costs, and whose exterior dimension can be reduced and the manufacturing can be easier by adopting a ball lens for narrowing the beam width.

Abstract: The present invention relates to an optical filter whose a sidelobe disturbing a characteristic of an optical filter by weighting an optical coupling efficiency between waveguides is controlled upon applying a selective area growth method in a wavelength selective variable semiconductor optical filter and method of fabricating the same. The present invention can control the thickness of growth layer selectively by controlling the width of the dielectric thin film mask whose the growth is not achieved in the selective area growth method, can control the distance between two waveguides of the wavelength selective variable semiconductor optical filter by applying the result on the distance control between two waveguides. Accordingly, there can be changed an optical coupling efficiency between two waveguides spatially.

Abstract: A bidirectional optical communication module using a single optical fiber is disclosed. The module includes an optical fiber having a cut-away surface polished to have an acute angle between the cut-away surface and an axis of the optical fiber, a semiconductor laser emitting a transmission light coupled with a light fiber core, and a bidirectional optical device having a light receiving portion absorbing a receiving light outputted from the light fiber core for thereby optically coupling a bidirectional optical device in which a light receiving device is integrated into a light transmitting semiconductor laser as a single chip and an optical fiber when fabricating an optical module for implementing a light signal transmission and receiving operation using one optical fiber.

Abstract: A method for manufacturing self-aligned optic fiber-optic element coupling devices is described.

Abstract: Disclosed is an optical switch device for totally reflecting an incident light therein in accordance with a change in refractive index occurring owing to current application, which is manufactured by the steps of: sequentially forming an optical waveguide layer, an n-InP clad layer and an n-InGaAs cap layer on a main surface of an n-InP substrate using an epitaxial growing; selectively etching the n-InGaAs cap layer to form an opening tapered downward; diffusing an impurity into the n-InP clad layer through the opening and into the n-InGaAs cap layer to a predetermined depth from a surface thereof so as to form a first impurity diffused region in the n-InP clad layer under the opening and to form a second impurity diffused region along the surface of the n-InGaAs cap layer; etching the layers on the optical waveguide layer using a mask to form a ridge-shaped waveguide; and forming electrodes on the n-InGaAs cap layer and an exposed surface of the n-InP clad layer and on a surface which is opposite to the main

Abstract: A method for manufacturing the semiconductor laser device comprising the steps of sequentially forming an active layer, a photo-waveguide layer, a cladding layer, and an ohmic contact layer on an upper surface of an InP substrate; forming a first patterned dielectric layer on the ohmic contact layer; depositing a patterned photoresist on the ohmic contact layer to define a p- electrode stripe layer; forming the p- electrode stripe layer only on a part of the ohmic contact layer; performing an annealing process; etching back the layers until the photo-waveguide layer is exposed, using the first patterned dielectric layer and the p- electrode stripe layer as an etching mask, to form a ridge; depositing a second dielectric layer on the substrate formed thus; selectively removing the second dielectric layer to form a contact hole on the p- electrode stripe layer; coating a bonding pad metal layer on the second dielectric layer and in the contact hole; and coating an n- electrode metal layer on bottom surface of t

Abstract: An avalanche photodiode in which a strained superlattice structure is used as a multiplication layer, comprising: an n.sup.+ type InP substrate; an n.sup.+ type InP epitaxial layer formed on a main surface of the substrate; an N type In.sub.1-x Al.sub.x As layer formed on the epitaxial layer; an n.sup.+ type In.sub.1-x Al.sub.x As layer formed on the N type In.sub.1-x Al.sub.x As layer, the n.sup.+ type In.sub.1-x Al.sub.x As layer having a relatively high impurity concentration more than the N type In.sub.1-x Al.sub.x As layer; the multiplication layer deposited on the n.sup.+ type In.sub.1-x Al.sub.x As layer, the multiplication layer having an In.sub.0.53 Ga.sub.0.47 As/In.sub.1-x Al.sub.x As superlattice structure; first and second p.sup.+ type In.sub.1-x Al.sub.x As layers laminated sequentially on the multiplication layer; an absorbing layer formed on the second p.sup.+ type In.sub.1-x Al.sub.x As layer, the absorbing layer being made of an In.sub.0.53 Ga.sub.0.