Patents by Inventor Hong Min Huang

Hong Min Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • THERMAL INTERFACE MATERIAL WITH ION SCAVENGER
    Publication number: 20170137685
    Abstract: A thermal interface material includes at least one polymer, at least one thermally conductive filler; and at least one ion scavenger. In some embodiments, the ion scavenger is a complexing agent selected from the group consisting of: nitrogen containing complexing agents, phosphorus containing complexing agents, and hydroxyl carboxylic acid based complexing agents.
    Type: Application
    Filed: July 7, 2014
    Publication date: May 18, 2017
    Inventors: Ya Qun Liu, Liang Zeng, Hui Wang, Bright Zhang, Hong Min Huang
  • COMPRESSIBLE THERMAL INTERFACE MATERIALS
    Publication number: 20170018481
    Abstract: Provided is a compressible thermal interface material including a polymer, a thermally conductive filler, and a phase change material. A formulation for forming a compressible thermal interface material and an electronic component including a compressible thermal interface material are also provided.
    Type: Application
    Filed: February 4, 2015
    Publication date: January 19, 2017
    Applicant: Honeywell International Inc.
    Inventors: Liang Zeng, Ya Qun Liu, Wei Chang, Liqiang Zhang, Zhe Ding, Wei Jun Wang, Hong Min Huang
  • ANTI-REFLECTIVE COATING FOR SAPPHIRE
    Publication number: 20170017017
    Abstract: A coated substrate includes a sapphire substrate and an anti-reflective coating comprising a silicon-based material, wherein the anti-reflective coating has refractive index of 1.23 to 1.45 and a Mohs hardness of at least 4. A method of coating a sapphire substrate with an anti-reflective coating includes applying a liquid formulation to a sapphire substrate to form a coated substrate, and curing the coated substrate at a temperature of at least 500° C. to form an anti-reflective layer on the sapphire substrate.
    Type: Application
    Filed: June 15, 2016
    Publication date: January 19, 2017
    Inventors: Huifeng Duan, Yanming Shen, Ya Qun Liu, Hong Min Huang
  • Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants
    Patent number: 8053867
    Abstract: Phosphorous-comprising dopants, methods for forming phosphorous-doped regions in a semiconductor material, and methods for fabricating phosphorous-comprising dopants are provided. In one embodiment, a phosphorous-comprising dopant comprises a phosphorous source comprising a phosphorous-comprising salt, a phosphorous-comprising acid, phosphorous-comprising anions, or a combination thereof, an alkaline material, cations from an alkaline material, or a combination thereof, and a liquid medium.
    Type: Grant
    Filed: August 20, 2008
    Date of Patent: November 8, 2011
    Assignee: Honeywell International Inc.
    Inventors: Hong Min Huang, Carol Gao, Zhe Ding, Albert Peng, Ya Qun Liu
  • PHOSPHOROUS-COMPRISING DOPANTS AND METHODS FOR FORMING PHOSPHOROUS-DOPED REGIONS IN SEMICONDUCTOR SUBSTRATES USING PHOSPHOROUS-COMPRISING DOPANTS
    Publication number: 20100048006
    Abstract: Phosphorous-comprising dopants, methods for forming phosphorous-doped regions in a semiconductor material, and methods for fabricating phosphorous-comprising dopants are provided. In one embodiment, a phosphorous-comprising dopant comprises a phosphorous source comprising a phosphorous-comprising salt, a phosphorous-comprising acid, phosphorous-comprising anions, or a combination thereof, an alkaline material, cations from an alkaline material, or a combination thereof, and a liquid medium.
    Type: Application
    Filed: August 20, 2008
    Publication date: February 25, 2010
    Applicant: HONEYWELL INTERNATIONAL INC.
    Inventors: Hong Min Huang, Carol Gao, Zhe Ding, Albert Peng, Ya Qun Liu