Abstract: A method according to the present disclosure includes receiving a workpiece including a gate structure, a first source/drain (S/D) feature, a second S/D feature, a first dielectric layer over the gate structure, the first S/D feature, the second S/D feature, a first S/D contact over the first S/D feature, a second S/D contact over the second S/D feature, a first etch stop layer (ESL) over the first dielectric layer, and a second dielectric layer over the first ESL, forming a S/D contact via through the second dielectric layer and the first ESL to couple to the first S/D contact, forming a gate contact opening through the second dielectric layer, the first ESL, and the first dielectric layer to expose the gate structure, and forming a common rail opening adjoining the gate contact opening to expose the second S/D contact, and forming a common rail contact in the common rail opening.

Abstract: A system and method for cleaning a preclean process chamber in between wafer processing. The internal pressure of the preclean process chamber is reduced to a first pressure and a first gas that consists of oxygen and an inert or noble gas, is introduced into the chamber. Plasma is generated within the preclean process chamber using the first gas at the first pressure. Internal pressure is then reduced to a second pressure, less than the first, and the first gas is continued into the chamber. Plasma is then generated using the first gas at the second pressure. Thereafter, a second gas, consisting of an oxygen-free inert or noble gas, is introduced into the chamber at the second pressure, following which plasma is generated within the chamber using only the second gas.

Abstract: In an embodiment, a device includes: a gallium nitride device on a substrate, the gallium nitride device including an electrode; a dielectric layer on and around the gallium nitride device; an isolation layer on the dielectric layer; a semiconductor layer on the isolation layer, the semiconductor layer including a silicon device; a through via extending through the semiconductor layer, the isolation layer, and the dielectric layer, the through via electrically and physically coupled to the electrode of the gallium nitride device; and an interconnect structure on the semiconductor layer, the interconnect structure including metallization patterns electrically coupled to the through via and the silicon device.

Abstract: A capacitor structure for a power semiconductor device includes a semiconductor substrate, an isolation insulating layer having a ring-shape and including an outer periphery and an inner periphery defining an opening region, a first electrode disposed on the isolation insulating layer, a dielectric layer disposed on the first electrode, and a second electrode disposed on the dielectric layer.

Abstract: A capacitor structure for a power semiconductor device includes a semiconductor substrate, an isolation insulating layer having a ring-shape and including an outer periphery and an inner periphery defining an opening region, a first electrode disposed on the isolation insulating layer, a dielectric layer disposed on the first electrode, and a second electrode disposed on the dielectric layer.

Abstract: A method according to the present disclosure includes receiving a workpiece including a gate structure, a first source/drain (S/D) feature, a second S/D feature, a first dielectric layer over the gate structure, the first S/D feature, the second S/D feature, a first S/D contact over the first S/D feature, a second S/D contact over the second S/D feature, a first etch stop layer (ESL) over the first dielectric layer, and a second dielectric layer over the first ESL, forming a S/D contact via through the second dielectric layer and the first ESL to couple to the first S/D contact, forming a gate contact opening through the second dielectric layer, the first ESL, and the first dielectric layer to expose the gate structure, and forming a common rail opening adjoining the gate contact opening to expose the second S/D contact, and forming a common rail contact in the common rail opening.

Abstract: A method according to the present disclosure includes receiving a workpiece including a gate structure, a first source/drain (S/D) feature, a second S/D feature, a first dielectric layer over the gate structure, the first S/D feature, the second S/D feature, a first S/D contact over the first S/D feature, a second S/D contact over the second S/D feature, a first etch stop layer (ESL) over the first dielectric layer, and a second dielectric layer over the first ESL, forming a S/D contact via through the second dielectric layer and the first ESL to couple to the first S/D contact, forming a gate contact opening through the second dielectric layer, the first ESL, and the first dielectric layer to expose the gate structure, and forming a common rail opening adjoining the gate contact opening to expose the second S/D contact, and forming a common rail contact in the common rail opening.

Abstract: Some implementations described herein provide a gas curtain system. The gas curtain system includes various components to prevent a gas flowing within a chamber of an interface tool from flowing through an opening into a transport carrier adjacent to the interface tool. The gas curtain system may include a gas distribution component along an edge of the opening that generates a flow of another gas across the opening towards an opposite edge of the opening. In this way, the gas from the chamber is prevented from entering the transport carrier. By preventing the gas from the chamber from entering the transport carrier, a relative humidity within an environment of the transport carrier is maintained such that condensation of moisture on one or more semiconductor wafers within the transport carrier is mitigated.

Abstract: A method according to the present disclosure includes receiving a workpiece including a gate structure, a first source/drain (S/D) feature, a second S/D feature, a first dielectric layer over the gate structure, the first S/D feature, the second S/D feature, a first S/D contact over the first S/D feature, a second S/D contact over the second S/D feature, a first etch stop layer (ESL) over the first dielectric layer, and a second dielectric layer over the first ESL, forming a S/D contact via through the second dielectric layer and the first ESL to couple to the first S/D contact, forming a gate contact opening through the second dielectric layer, the first ESL, and the first dielectric layer to expose the gate structure, and forming a common rail opening adjoining the gate contact opening to expose the second S/D contact, and forming a common rail contact in the common rail opening.

Abstract: The present disclosure describes a method that includes forming a dielectric layer over a contact region on a substrate; etching the dielectric layer to form a contact opening to expose the contact region; and pre-cleaning the exposed contact region to remove a residual material formed by the etching. During the pre-cleaning, the contact region is exposed to an inductively coupled radio frequency (RF) plasma. Also, during the pre-cleaning, a direct current power supply unit (DC PSU) provides a bias voltage to the substrate and a magnetic field is applied to the inductively coupled RF plasma to collimate ions.

Abstract: The present disclosure describes a method that includes forming a dielectric layer over a contact region on a substrate; etching the dielectric layer to form a contact opening to expose the contact region; and pre-cleaning the exposed contact region to remove a residual material formed by the etching. During the pre-cleaning, the first contact region is exposed to an inductively coupled radio frequency (RF) plasma. Also, during the pre-cleaning, a direct current power supply unit (DC PSU) provides a bias voltage to the substrate and a magnetic field is applied to the inductively coupled RF plasma to collimate ions.

Abstract: The present disclosure describes a method that includes forming a dielectric layer over a contact region on a substrate; etching the dielectric layer to form a contact opening to expose the contact region; and pre-cleaning the exposed contact region to remove a residual material formed by the etching. During the pre-cleaning, the first contact region is exposed to an inductively coupled radio frequency (RF) plasma. Also, during the pre-cleaning, a direct current power supply unit (DC PSU) provides a bias voltage to the substrate and a magnetic field is applied to the inductively coupled RF plasma to collimate ions.

Abstract: A protection case for a portable electronic device includes a case having a front part and a rear part, and the portable electronic device is accommodated between the front and rear parts. A rear cover is connected to the rear part and a front cover is connected to the front part. The front cover has a front decoration plate, a connection member and a locking member. The front decoration plate is removably connected to the front part. The connection member is flexible and has a first end connected to the front decoration plate and a second end of the connection member is clamped between the front and rear parts. The locking member has a hook hooked with the groove. The protection case can be easily replaced and changed.

Abstract: A protection case for a portable electronic device includes a case having a front part and a rear part, and the portable electronic device is accommodated between the front and rear parts. A rear cover is connected to the rear part and a front cover is connected to the front part. The front cover has a front decoration plate, a connection member and a locking member. The front decoration plate is removably connected to the front part. The connection member is flexible and has a first end connected to the front decoration plate and a second end of the connection member is clamped between the front and rear parts. The locking member has a hook hooked with the groove. The protection case can be easily replaced and changed.

Abstract: A waterproof composite material includes a substrate and a thermoplastic film. The substrate has an inner surface and an outer surface. The thermoplastic film has a waterproof property and has an inner surface and an outer surface. The inner surface of the thermoplastic film and the outer surface of the substrate form thermal fusion. When the thermoplastic film and the substrate are thermally fused together, a pressure is applied to the outer surface of the thermoplastic film. According to the above-mentioned structure, the firm combination, the smooth surface, the simple and quick manufacturing processes and the reduction of environment contamination can be obtained.

Abstract: A rotary display stage includes a display ground, an integrated circuit device, and a data transmission port. The display ground includes a base, and a rotary table arranged on the base. The base has a sound-effect switch structure and a track switch structure. The integrated circuit device is disposed inside the base, and includes an amplifier structure and a storage media. The data transmission port is arranged on the display ground and communicated with an exterior device optionally. The sound-effect switch structure, the track switch structure and the data transmission port electrically connect the integrated circuit device. Therefore, various audio data, except the tracks saved in the storage media previously, could optionally be played on via the data transmission port.

Abstract: A zipper tab assembly has a connecting member, a clamping member and a decorative tab. The connecting member has a through hole, an engaging channel and two engaging holes. The clamping member is detachably attached to the connecting member and has a resilient loop and two engaging ears. The resilient loop has a clamping space and an opening communicating with the clamping space. The engaging ears are formed on the resilient loop at two sides of the opening and are detachably mounted in the engaging channel in the connecting member. Each engaging ear has a protrusion extending into and engaging with one of the engaging holes in the connecting member. The decorative tab is mounted in and clamped inside the clamping space of the resilient loop.

Abstract: A zipper tab assembly has a connecting member, a clamping member and a decorative tab. The connecting member has a through hole, an engaging channel and two engaging holes. The clamping member is detachably attached to the connecting member and has a resilient loop and two engaging ears. The resilient loop has a clamping space and an opening communicating with the clamping space. The engaging ears are formed on the resilient loop at two sides of the opening and are detachably mounted in the engaging channel in the connecting member. Each engaging ear has a protrusion extending into and engaging with one of the engaging holes in the connecting member. The decorative tab is mounted in and clamped inside the clamping space of the resilient loop.