Abstract: To manage data flow in generating different signal formats for use in optical metrology, a project data object is created. A first option data object is created. The first option data object has a set of signal parameters. Different settings of the set of signal parameters correspond to different signal formats for diffraction signals. A version number is associated with the first option data object. The first option data object is linked with the project data object. At least a second option data object is created. The second option data object has a set of signal parameters. Different settings of the set of signal parameters correspond to different signal formats for diffraction signals. The set of signal parameters of the first option data object and the set of signal parameters of the second option data object are set differently. Another version number is associated with the second option data object. The second option data object is linked with the project data object.

Abstract: In allocating processing units of a computer system to generate simulated diffraction signals used in optical metrology, a request for a job to generate simulated diffraction signals using multiple processing units is obtained. A number of processing units requested for the job to generate simulated diffraction signals is then determined. A number of available processing units is determined. When the number of processing units requested is greater than the number of available processing units, a number of processing units is assigned to generate the simulated diffraction signals that is less than the number of processing units requested.

Abstract: In processing requests for wafer structure profile determination from optical metrology measurements, a plurality of measured diffraction signal of a plurality of structures formed on one or more wafers is obtained. The plurality of measured diffraction signals is distributed to a plurality of instances of a profile search module. The plurality of instances of the profile search model is activated in one or more processing threads of one or more computer systems. The plurality of measured diffraction signals is processed in parallel using the plurality of instances of the profile search module to determine profiles of the plurality of structures corresponding to the plurality of measured diffraction signals.

Abstract: A system to process requests for wafer structure profile determination from optical metrology measurements off a plurality of structures formed on one or more wafer includes a diffraction signal processor, a diffraction signal distributor, and a plurality of profile search servers. The diffraction signal processor is configured to obtain a plurality of measured diffraction signals of the plurality of structures. The diffraction signal distributor is coupled to the diffraction signal processor. The diffraction signal processor is configured to transmit the plurality of measured diffraction signals to the diffraction signal distributor. The plurality of profile search servers is coupled to the diffraction signal distributor. The diffraction signal distributor is configured to distribute the plurality of measured diffraction signals to the plurality of profile search servers.

Abstract: In allocating processing units, first and second requests for jobs are obtained. First and second numbers of processing units requested are determined. First and second numbers of available processing units are determined. When the first number of available processing units is non-zero, the first number of available number of processing units or the first number of processing units requested is assigned to a first processing cluster. A first processing unit in the first processing cluster is designated as a master node. When the second number of available processing units is non-zero, the second number of available number of processing units or the second number of processing units requested is assigned to a second processing cluster. The first processing unit in the second processing cluster is designated as a slave node. The first and second jobs are assigned to the first and second processing clusters, respectively.

Abstract: To manage data flow in generating different signal formats for use in optical metrology, a project data object is created. A first option data object is created. The first option data object has a set of signal parameters. Different settings of the set of signal parameters correspond to different signal formats for diffraction signals. A version number is associated with the first option data object. The first option data object is linked with the project data object. At least a second option data object is created. The second option data object has a set of signal parameters. Different settings of the set of signal parameters correspond to different signal formats for diffraction signals. The set of signal parameters of the first option data object and the set of signal parameters of the second option data object are set differently. Another version number is associated with the second option data object. The second option data object is linked with the project data object.

Abstract: To manage data flow in generating profile models for use in optical metrology, a project data object is created. A first profile model data object is created. The first profile model data object corresponds to a first profile model defined using profile parameters. A version number is associated with the first profile model data object. The first profile model data object is linked with the project data object. At least a second profile model data object is created. The second profile model data object corresponds to a second profile model defined using profile parameters. The first and second profile models are different. Another version number is associated with the second profile model data object. The second profile model data object is linked with the project data object. The project data object, the first profile model data object, and the second profile model data object are stored.

Abstract: In allocating processing units of a computer system to generate simulated diffraction signals used in optical metrology, a request for a job to generate simulated diffraction signals using multiple processing units is obtained. A number of processing units requested for the job to generate simulated diffraction signals is then determined. A number of available processing units is determined. When the number of processing units requested is greater than the number of available processing units, a number of processing units is assigned to generate the simulated diffraction signals that is less than the number of processing units requested.

Abstract: In generating a profile model to characterize a structure to be examined using optical metrology, a view canvas is displayed, with the profile model being generated displayed in the view canvas. A profile shape palette is displayed adjacent to the view canvas. A plurality of different profile shape primitives is displayed in the profile shape palette. Each profile shape primitive in the profile shape palette is defined by a set of profile parameters. When a user selects a profile shape primitive from the profile shape palette, drags the selected profile shape primitive from the profile shape palette, and drops the selected profile shape primitive into the view canvas, the selected profile shape primitive is incorporated into the profile model being generated and displayed in the view canvas.

Abstract: In processing requests for wafer structure profile determination from optical metrology measurements, a plurality of measured diffraction signal of a plurality of structures formed on one or more wafers is obtained. The plurality of measured diffraction signals is distributed to a plurality of instances of a profile search module. The plurality of instances of the profile search model is activated in one or more processing threads of one or more computer systems. The plurality of measured diffraction signals is processed in parallel using the plurality of instances of the profile search module to determine profiles of the plurality of structures corresponding to the plurality of measured diffraction signals.

Abstract: When a piezoelectric material is manufactured by hydrothermal method, the proper amount of lead contained in the piezoelectric film can be ensured and decreases in piezoelectric characteristics can be prevented. A method for manufacturing a piezoelectric material expressed by the formula ABO3, containing an element “a” as the element expressed by A above, and having a perovskite crystal structure, comprises a first step of producing an oxide containing an element “a′”, and a second step of producing a piezoelectric material by subjecting the oxide produced in the first step to a hydrothermal processing using an aqueous solution containing the element “a”, wherein the amount of the element “a”, contained in the piezoelectric material produced in the second step is increased over the amount of the element “a” contained in the oxide produced in the first step.

Abstract: Provided is a method for manufacturing a piezoelectric element that has excellent piezoelectric characteristics and can be made into a thicker film. A piezoelectric thin film is crystallized by a process in which piezoelectric precursor films 4021 through 4025 containing the metal elements of a piezoelectric ceramic are coated with a material, dried, pyrolyzed, and then heat-treated under prescribed conditions in a diffusion furnace. With this method, a piezoelectric thin film can be made into a thicker film without initiating cracking.

Abstract: A method for manufacturing a piezoelectric element is disclosed. The method includes the steps of forming a lower electrode over a substrate, forming a piezoelectric luminous film over the lower electrode, forming an upper electrode over the piezoelectric film, forming a pressure luminous layer for emitting light upon application of pressure on the upper electrode, and attaching a substrate to the pressure luminous layer—has been inserted as a new abstract.

Abstract: A piezoelectric element having a piezoelectric film where the difference in the quantity of lead along the thickness of the film is minimized. The film is obtained by first applying, at least once, a first sol for use in forming a PZT film on a substrate having a lower electrode formed thereon. Second, applying a second sol having the greater lead content than the first sol. Third, subjecting these films to heat treatment at a predetermined temperature at least once. The second sol has a composition capable of forming a piezoelectric film having a Perovskite structure expressed generally by AxByO3, and the content of material constituting the A site of the first sol is greater than what constitutes the A site of the second sol.

Abstract: A process for the formation of an oxide ceramic thin film, which permits the control of film oxygen content and can give a film reduced in oxygen deficiency. The process is characterized in that the step of forming an amorphous thin film, the step of heating the thin film to crystallize it or the step of heat-treating the crystallized film is conducted in a moisture-containing atmosphere.

Abstract: A piezoelectric element having a piezoelectric film where the difference in the quantity of lead along the thickness of the film is minimized. The film is obtained by first applying, at least once, a first sol for use in forming a PZT film on a substrate having a lower electrode formed thereon. Second, applying a second sol having the greater lead content than the first sol. Third, subjecting these films to heat treatment at a predetermined temperature at least once. The second sol has a composition capable of forming a piezoelectric film having a Perovskite structure expressed generally by AxByO3, and the content of material constituting the A site of the first sol is greater than what constitutes the A site of the second sol.

Abstract: A piezoelectric actuator, comprising a stacked structure consisting of a top electrode 5, a piezoelectric film 4, and a bottom electrode 3, wherein the piezoelectric film comprises a first group 42 of piezoelectric ceramic particles and a second group 43 of piezoelectric ceramic particles. A distinctive feature is that the particles constituting the first group of piezoelectric ceramic particles are larger than the jingo particles constituting the second group of piezoelectric ceramic particles, and the first group of piezoelectric ceramic particles and the second group of piezoelectric ceramic particles have mutually different compositions. The piezoelectric actuator can thus be manufactured by an application method in a low-temperature environment, and a thicker piezoelectric film can be obtained. In addition, a highly practical piezoelectric film can be provided by combining the advantages of a plurality of material types.

Abstract: When a piezoelectric material is manufactured by hydrothermal method, the proper amount of lead contained in the piezoelectric film can be ensured and decreases in piezoelectric characteristics can be prevented. A method for manufacturing a piezoelectric material expressed by the formula ABO3, containing an element “a” as the element expressed by A above, and having a perovskite crystal structure, comprises a first step of producing an oxide containing an element “a′”, and a second step of producing a piezoelectric material by subjecting the oxide produced in the first step to a hydrothermal processing using an aqueous solution containing the element “a”, wherein the amount of the element “a” contained in the piezoelectric material produced in the second step is increased over the amount of the element “a” contained in the oxide produced in the first step.

Abstract: A piezoelectric device having a crystallized piezoelectric film between a lower and an upper electrode, wherein the crystal axis of the columnar crystal grain with the (001) orientation in the crystal forming the piezoelectric film is inclined by a predetermined angle relative to the normal direction of the lower electrode face, thereby improving the electric/mechanic converting function under low voltage conditions.

Abstract: When a piezoelectric material is manufactured by hydrothermal method, the proper amount of lead contained in the piezoelectric film can be ensured and decreases in piezoelectric characteristics can be prevented. A method for manufacturing a piezoelectric material expressed by the formula ABO3, containing an element “a” as the element expressed by A above, and having a perovskite crystal structure, comprises a first step of producing an oxide containing an element “a′”, and a second step of producing a piezoelectric material by subjecting the oxide produced in the first step to a hydrothermal processing using an aqueous solution containing the element “a”, wherein the amount of the element “a”, contained in the piezoelectric material produced in the second step is increased over the amount of the element “a” contained in the oxide produced in the first step.