Abstract: First, a lower film of AlNd Alloy and an upper film of MoW alloy are deposited in succession, and then patterned by an etchant including HNO3 of 0.1–10%, H3PO4 of 65–55%, CH3COOH of 5–20%, a stabilizer of 0.1–5% and the other ultra pure eater, to form a gate wire including a gate line, a gate electrode and a gate pad on a substrate. Next, a gate insulating film, a semiconductor layer and an ohmic contact layer are formed in succession, and then, MoW alloy is deposited and patterned by an etchant including HNO3 of 0.1–10%, H3PO4 of 65–55%, CH3COOH of 5–20%, a stabilizer of 0.1–5% and the other ultra pure water, to form a data wire including a data line intersecting the gate line, a source electrode, a drain electrode and a data pad. Next, a passivation layer is deposited and patterned to form contact holes for exposing the drain electrode, the gate pad and the data pad, respectively.

Abstract: First, a lower film of AlNd Alloy and an upper film of MoW alloy are deposited in succession, and then patterned by an etchant including HNO3 of 0.1-10%, H3PO4 of 65-55%, CH3COOH of 5-20%, a stabilizer of 0.1-5% and the other ultra pure eater, to form a gate wire including a gate line, a gate electrode and a gate pad on a substrate. Next, a gate insulating film, a semiconductor layer and an ohmic contact layer are formed in succession, and then, MoW alloy is deposited and patterned by an etchant including HNO3 of 0.1-10%, H3PO4 of 65-55%, CH3COOH of 5-20%, a stabilizer of 0.1-5% and the other ultra pure water, to form a data wire including a data line intersecting the gate line, a source electrode, a drain electrode and a data pad. Next, a passivation layer is deposited and patterned to form contact holes for exposing the drain electrode, the gate pad and the data pad, respectively.