Abstract: A method of operating a storage controller includes receiving raw data indicating a series of bits each corresponding to one of threshold voltage states, performing a first state shaping for reducing a number of first target bits of the series of bits, logical values of the first target bits being equal to a logical value of a target threshold voltage state of the threshold voltage states in a first page of plural pages, generating first indicator data that indicates the first target bits based on the first state shaping, compressing the first indicator data, and storing the compressed first indicator data.

Abstract: In order to achieve higher contact quality for backside power distribution networks, provided is a backside contact to a semiconductor device having a positive slope and a dielectric sidewall liner, and methods for making the same.

Abstract: The present invention relates to a method for simultaneous analysis of radiocarbon and tritium, the method including (i) mixing a radioactive waste sample containing a radiocarbon nuclide and tritiated water, and an oxidizing agent; (ii) oxidizing the radiocarbon nuclide in the radioactive waste sample to a gas containing an oxide of the radiocarbon nuclide by the oxidizing agent while suppressing volatilization of compounds containing gamma radionuclides other than the radiocarbon nuclide and tritium; (iii) discharging the gas containing an oxide of the radiocarbon nuclide by injecting an inert gas to the mixture; (iv) vaporizing and discharging the tritiated water in the mixture; and (v) analyzing radioactivity of radiocarbon and tritium from the discharged gas containing an oxide of the radiocarbon nuclide and tritiated water, and an apparatus for analysis of the same.

Abstract: Disclosed herein are a microorganism with excellent deacetoxycephalosporin C (DAOC) productivity and a use thereof. A mutant microorganism with improved DAOC productivity and a use thereof for producing 7-aminodeacetoxycephalosporanic acid (7-ADCA) are provided.

Abstract: A display device includes: a base substrate; a first pixel electrode, a second pixel electrode, and a third pixel electrode arranged on the base substrate to be spaced apart from each other; a pixel defining film on the first pixel electrode, the second pixel electrode, and the third pixel electrode and including a first opening exposing the first pixel electrode, a second opening exposing the second pixel electrode and spaced apart from the first opening, and a third opening exposing the third pixel electrode and spaced apart from the first opening and the second opening; a first organic layer on the first pixel electrode exposed by the first opening; a second organic layer on the second pixel electrode exposed by the second opening; and a third organic layer on the third pixel electrode exposed by the third opening.

Abstract: Resistance measuring structures for a stacked integrated circuit device are provided. The resistance measuring structures may include a first Complementary Field Effect Transistor (CFET) stack, a second CFET stack, and a conductive connection. The first CFET may include a first upper transistor that includes a first upper drain region and a first lower transistor that is between the substrate and the first upper transistor and includes a first lower drain region. The second CFET may include a second upper transistor that includes a second upper drain region and a second lower transistor that is between the substrate and the second upper transistor and includes a second lower drain region. The conductive connection may electrically connect the first upper drain region and the second upper drain region.

Abstract: The present invention relates to an integrated connector and a heat exchanger including the same, in which a connector main body is formed by pressing one pipe, a cap is press-fitted into the connector main body, such that the integrated connector is formed so that an interior of the connector main body is blocked by the cap. Therefore, the number of components used to manufacture a connector, which connects and securely couples a header tank and a gas-liquid separator, may be reduced, the integrated connector may be easily manufactured, and a brazing defect may be reduced at portions where the integrated connector is joined to the header tank and the gas-liquid separator of the heat exchanger.

Abstract: A vehicle lamp for forming a predetermined beam pattern using a plurality of lamp modules is provided. Each of the lamp modules includes a light source unit that generates light and includes a plurality of light source chips; an optical path adjustment unit that guides a path of the light irradiated from the light source unit; and an optical unit that transmits the light guided by the optical path adjustment unit to form a beam pattern including at least one light irradiation pattern formed by at least one of the plurality of light source chips. In particular, the plurality of light source chips are arranged in a left-right direction.

Abstract: Provided are an apparatus for manufacturing a textile grid with increased adhesion and a method thereof capable of integrating the textile grid with a concrete structure by increasing the adhesion of the textile grid when the concrete structure is built, repaired, or reinforced, increasing structural safety and durability of the concrete structure, increasing a working speed by coating a surface of the textile grid with an abrasive material powder that is a surface coating material in an automatic series of processes immediately after the textile grid is manufactured, and increasing coating performance by automatically inspecting and adjusting the amount of the coating material applied to the surface of the textile grid using a camera.

Abstract: Provided is field-effect transistor structure including: a channel structure; a source/drain region and a 2nd source/drain region connected to each other through the channel structure; a 1st contact plug, on a top surface of the 1st source/drain region, connected to a voltage source or 1st circuit element through a back-end-of-line (BEOL) structure; and a 2nd contact plug, on a bottom surface of the 2nd source/drain region, connected to the 1st voltage source, through a backside power rail, or another circuit element, wherein the 1st source/drain region and the 2nd source/drain region have a substantially same height.

Abstract: Integrated circuit devices and methods of forming the same are provided. The methods may include providing a substrate structure including a substrate, a bottom insulator and a semiconductor region between the substrate and the bottom insulator, the semiconductor region extending in a first direction; forming first and second preliminary transistor structures on the bottom insulator, wherein and the bottom insulator may include first and second portions that the first and second preliminary transistor structures respectively overlap, and a third portion between the first and second portions; replacing the third portion of the bottom insulator with a bottom semiconductor layer; forming a source/drain region between the first and second preliminary transistor structures; replacing the substrate and the semiconductor region with a backside insulator; forming a power contact in the backside insulator, wherein the source/drain region may overlap the power contact; and forming a power rail.

Abstract: According to some aspects of the disclosure, an organic light-emitting display device including a display panel including a driving thin film transistor (TFT), comprises a sensing unit configured to perform a sensing operation for external compensation of the display panel, and an analog-digital converter (ADC) configured to perform a conversion operation of converting an analog value held in the sensing unit into a digital value, wherein the sensing unit comprises a basic sensing unit configured to perform a sensing operation on the driving TFT, and a dummy sensing unit configured to perform a sensing operation on changes in a gain and an offset of the ADC, and the basic sensing unit and the dummy sensing unit are in a cascade connection to each other.

Abstract: A semiconductor device include: a substrate; a 1st transistor formed above the substrate, the 1st transistor including a 1st channel set of a plurality of 1st nanosheet layers, a 1st gate structure surrounding the 1st nanosheet layers, and 1st and 2nd source/drain regions at both ends of the 1st channel set; and a 2nd transistor formed above the 1st transistor in a vertical direction, the 2nd transistor including a 2nd channel set of a plurality of 2nd nanosheet layers, a 2nd gate structure surrounding the 2nd nanosheet layers, and 3rd and 4th source/drain regions at both ends of the 2nd channel set, wherein the 1st channel set has a greater width than the 2nd channel set, wherein a number of the 1st nanosheet layers is smaller than a number of the 2nd nanosheet layers, and wherein a sum of effective channel widths of the 1st nanosheet layers is substantially equal to a sum of effective channel width of the 2nd nanosheet layers.

Abstract: Disclosed is an operation method of a memory device which includes a plurality of memory cells stacked in a direction perpendicular to a substrate and a plurality of word lines respectively connected with the plurality of memory cells. The method includes applying a 0-th pass voltage to a first selected word line among the plurality of word lines and applying a first pass voltage to a first upper adjacent word line among the plurality of word lines, during a first word line setup period, and applying a first program voltage to the first selected word line and applying a second pass voltage smaller than the first pass voltage to the first upper adjacent word line, during a first program execution period after the first word line setup period. The first upper adjacent word line is a word line physically adjacent to the first selected word line.

Abstract: Integrated circuit devices and methods of forming the same are provided. The methods may include forming a sacrificial layer in a preliminary substrate by adding an element into the preliminary substrate, forming a transistor structure on the preliminary substrate, the transistor structure including a source/drain region, replacing the sacrificial layer with a power contact that comprises an upper surface contacting the source/drain region, and forming a power rail that contacts a lower surface of the power contact.

Abstract: Integrated circuit devices and methods of forming the same are provided. The integrated circuit devices may include a lower insulating structure, a transistor on the lower insulating structure, the transistor including a source/drain region, a power rail structure in the lower insulating structure, and a power contact structure that is on the power rail structure and electrically connects the source/drain region to the power rail structure. The power contact structure may include a lower portion that is in the power rail structure.

Abstract: Provided is a jetting driver that can be used for various types of heads with minimal changes. The jetting driver includes: an image board receiving raw image data and generating image data by transforming the raw image data into a form suitable for a type of heads used; and an interface board physically separated from the image board, receiving the image data, and transmitting the image data to the heads through a plurality of channels.

Abstract: Nanosheet transistor devices are provided. A nanosheet transistor device includes a transistor stack that includes a lower nanosheet transistor having a first nanosheet width and a lower gate width. The transistor stack also includes an upper nanosheet transistor that is on the lower nanosheet transistor and that has a second nanosheet width and an upper gate width that are different from the first nanosheet width and the lower gate width, respectively. Related methods of forming a nanosheet transistor device are also provided.

Abstract: The present invention relates to a thiobenzimidazole derivative or a pharmaceutically acceptable salt thereof, and a composition for preventing or treating cancer, comprising the derivative as an active ingredient. The thiobenzimidazole derivative of the present invention exhibits cell toxicity by blocking the cell cycle of a cancer cell and inducing apoptosis when administered to an individual, as the derivative inhibits tubulin polymerization by being activated in the cancer cell, and, thus, the derivative can be used for prevention or treatment of cancer, desirably for prevention or treatment of triple-negative breast cancer.