Patents by Inventor Hong-seok Min

Hong-seok Min has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120050942
    Abstract: Provided is an electrochemical capacitor including an electrolyte, an electrode cell immersed in the electrolyte, and including first and second electrodes alternately laminated with separators interposed therebetween, a housing in which the electrolyte and the electrode cell are contained, and a hydrofluoric acid adsorption member for adsorbing hydrofluoric acid (HF) applied on at least a portion of an inner surface of the housing.
    Type: Application
    Filed: August 24, 2011
    Publication date: March 1, 2012
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Hak Kwan Kim, Bae Kyun Kim, Hong Seok Min, Dong Hyeok Choi
  • Publication number: 20120033345
    Abstract: Disclosed is an electrochemical capacitor and method for manufacturing the same. The electrochemical capacitor includes: at least two winding-type separators which are wound in a spiral shape and are stacked; and stacking-type first and second electrodes which are alternately interposed between the wound separators, respectively.
    Type: Application
    Filed: November 24, 2010
    Publication date: February 9, 2012
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Hong Seok Min, Bae Kyun Kim, Hyun Chul Jung
  • Publication number: 20120018309
    Abstract: The present invention provides a pre-doping system of an electrode and a system using the same. The pre-doping system includes: a doping means for performing a doping process where lithium ions are doped into an electrode; a measuring means for performing a measuring process where an open-circuit potential of the electrode is measured; a switch unit for selectively performing any one of the doping process and the measuring process; a controller for controlling the doping means, the measuring means, and the switch unit and acquiring the open-circuit potential of the electrode measured by the measuring means.
    Type: Application
    Filed: November 17, 2010
    Publication date: January 26, 2012
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Hong Seok Min, Bae Kyun Kim, Hyun Chul Jung, Dong Hyeok Choi, Hak Kwan Kim
  • Publication number: 20120008254
    Abstract: A method for manufacturing a lithium ion capacitor, and a lithium ion capacitor manufactured using the method are provided. The method for manufacturing a lithium ion capacitor includes: disposing a lithium metal on a capacitor cell including a cathode, a separation film, and an anode; impregnating the capacitor cell with electrolyte including a lithium salt; changing the cathode and the anode to allow lithium ions within the electrolyte to be occluded into the anode; performing a primary reaction in which the cathode and the lithium metal are short-circuited to emit anions from the cathode and lithium ions from the lithium metal and a secondary reaction that the lithium ions emitted from the lithium metal are occluded into the cathode; and recharging the cathode and the anode to allow the lithium ions, which have been occluded into the cathode and the lithium ions within the electrolyte, to be occluded into the anode.
    Type: Application
    Filed: December 2, 2010
    Publication date: January 12, 2012
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Hong Seok Min, Bae Kyun Kim, Hyun Chul Jung, Dong Hyeok Choi, Hak Kwan Kim
  • Publication number: 20110310529
    Abstract: There are provided an electrochemical capacitor and a method for manufacturing the same. The electrochemical capacitor according to the present invention includes: a plurality of first and second electrodes disposed to be opposite to each other; a separator disposed between the first and second electrodes; wherein at least one of the plurality of first electrodes is made of an electrode material doped with lithium ions and a lithium layer having the dendrite is formed on the surface of the electrode material.
    Type: Application
    Filed: November 18, 2010
    Publication date: December 22, 2011
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Hong Seok Min, Hak Kwan Kim, Hyun Chul Jung, Dong Hyeok Choi
  • Publication number: 20110305931
    Abstract: Disclosed is a secondary power source and a manufacturing method thereof. The secondary power source includes a unit cell formed by sequentially laminating a first electrode, a separation film, and a second electrode, wherein the first electrode is formed by forming a first electrode material, into which lithium ions can be irreversibly occluded, on a first conductive sheet, and the first electrode is laminated in the unit cell after lithium ions are occluded into the first electrode material by using a metal that can supply lithium ions.
    Type: Application
    Filed: December 13, 2010
    Publication date: December 15, 2011
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Hong Seok Min, Hak Kwan Kim, Hyun Chul Jung, Dong Hyeok Choi, Bae Kyun Kim
  • Publication number: 20110300290
    Abstract: There are provided a device for fabricating an electrode by a roll-to-roll process and a method for fabricating an electrode. The device for fabricating an electrode includes an unwinding roll and a winding roll travelling an electrode material; a film forming roll disposed between the unwinding roll and the winding roll allowing the electrode material to travel along a cylindrical surface of the film forming roll and having a cooling unit cooling the electrode material; and an evaporation unit receiving a lithium source and mounted for the received lithium source to form a thin film in the electrode material positioned on the film forming roll. Thereby, the lithium is deposited in a vacuum atmosphere such that the process is simple and the deposition rate and the deposition uniformity of lithium can be improved.
    Type: Application
    Filed: November 3, 2010
    Publication date: December 8, 2011
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Hak Kwan Kim, Dong Hyeok Choi, Hong Seok Min, Hyun Chul Jung, Bae Kyun Kim
  • Publication number: 20110300449
    Abstract: Provided are a method of manufacturing an electrode for a secondary power source, and a secondary power source. The method includes forming an electrode active material on a conductive sheet, forming a Li thin film layer by depositing lithium (Li) on the electrode active material, doping the electrode active material with the deposited Li, and controlling a doping level by monitoring the doping amount of Li. Accordingly, a cathode is doped with Li ions before a cell is assembled, thereby simplifying the manufacturing process, enhancing the doping rate of Li ions, and making the doping amount even.
    Type: Application
    Filed: October 13, 2010
    Publication date: December 8, 2011
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Hak Kwan Kim, Dong Hyeok Choi, Hong Seok Min, Bae Kyun Kim, Hyun Chul Jung
  • Publication number: 20110278161
    Abstract: Disclosed herein is a doping bath for fabricating an energy storage device, including: a doping bath that receives an electrolyte; a lithium foil that is provided in the doping bath; and a power supply means that supplies power to the lithium foil and at least one cell laminate provided to be sunk in the electrolyte in the doping bath, wherein the power supply means performs a charging process to supply power between a cathode and an anode of the cell laminate and a discharging process to supply power between the lithium foil and the cathode of the cell laminate to dope the anode of the cell laminate with lithium.
    Type: Application
    Filed: August 31, 2010
    Publication date: November 17, 2011
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Dong Hyeok Choi, Hak Kwan Kim, Hong Seok Min, Hyun Chul Jung, Bae Kyun Kim
  • Publication number: 20110253431
    Abstract: Disclosed herein are a printed circuit substrate and a method of manufacturing the same. The printed circuit substrate includes an insulating layer, and a circuit layer that includes a circuit pattern disposed on the insulating layer and a barrier layer that is disposed to cover at least one surface of the circuit pattern and suppresses electrochemical migration from the circuit pattern, thereby making it possible to achieve high-density and secure reliability, and the method of manufacturing the same.
    Type: Application
    Filed: June 22, 2010
    Publication date: October 20, 2011
    Applicants: SNU R&DB FOUNDATION, SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Hyung Wook Park, Young Chang Joo, Hong Seok Min, Young Gwan Ko, Chang Sup Ryu, Ho Young Lee, Shin Bok Lee, Min Suk Jung
  • Publication number: 20110188171
    Abstract: There is provided an electric double layer capacitor and a method of manufacturing the same. The electric double layer capacitor includes first and second electrodes facing each other; and an ion-permeable separator interleaved between the first and second electrodes, wherein at least one of the first and second electrodes includes a metallic fiber being compressed to have pores therein and an electrode material filling the pores. The electric double layer capacitor has low equivalent series resistance (ESR) and high output density. Also, since the electrodes are formed to be thin, the electric double layer capacitor can be miniaturized.
    Type: Application
    Filed: November 23, 2010
    Publication date: August 4, 2011
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Sung Ho Lee, Hong Seok Min, Sang Kyun Lee, Hyun Chul Jung, Dong Sup Park
  • Patent number: 6821901
    Abstract: A method of through-etching a substrate that is simplified and by which the flow of ions can be kept to be regular during a plasma dry etching process, is provided. According to this method, a buffer layer is formed on a first plane of the substrate, a metal layer is formed on the buffer layer, an etching mask pattern is formed on a second plane opposite to the first plane, and the substrate is through-etched with the etching mask pattern as an etching mask. Preferably, the substrate is formed of a single-crystal silicon, the buffer layer is formed of silicon dioxide, and the metal layer is formed of aluminum.
    Type: Grant
    Filed: February 28, 2002
    Date of Patent: November 23, 2004
    Inventors: Seung-jin Song, Kyoungdoug Min, Young-chang Joo, Hong-seok Min, Sejun Kim, Kun-joong Park
  • Publication number: 20030162402
    Abstract: A method of through-etching a substrate that is simplified and by which the flow of ions can be kept to be regular during a plasma dry etching process, is provided. According to this method, a buffer layer is formed on a first plane of the substrate, a metal layer is formed on the buffer layer, an etching mask pattern is formed on a second plane opposite to the first plane, and the substrate is through-etched with the etching mask pattern as an etching mask. Preferably, the substrate is formed of a single-crystal silicon, the buffer layer is formed of silicon dioxide, and the metal layer is formed of aluminum.
    Type: Application
    Filed: February 28, 2002
    Publication date: August 28, 2003
    Inventors: Seung-jin Song, Kyoungdoug Min, Young-chang Joo, Hong-seok Min, Sejun Kim, Kun-joong Park