Abstract: Provided is a plasma generating apparatus. The apparatus includes a vacuum chamber, an ElectroStatic Chuck (ESC), an antenna holder. The vacuum chamber has a hollow interior and is sealed at its top by a vacuum plate that has a through-hole at its center. The ESC is disposed at an internal center of the vacuum chamber. The antenna unit is disposed within the vacuum chamber under the vacuum plate. The antenna cover covers and is coupled to a top of the antenna unit and receives and forwards an external source RF to the antenna unit. The cover holder is caught by an upper surface of the vacuum plate and suspends and holds the antenna unit.

Abstract: Provided is a plasma generating apparatus. The plasma generating apparatus includes a vacuum chamber, an ElectroStatic Chuck (ESC), an antenna unit, and an antenna cover. The vacuum chamber has a hollow interior and is sealed at a top. The ESC disposed at an internal center of the vacuum chamber receives an external bias Radio Frequency (RF). The antenna unit covers and seals the through-hole of an insulating vacuum plate. The antenna cover covers a top of the antenna unit and has a gas injection port.

Abstract: Provided is a plasma generating apparatus. The plasma generating apparatus includes a vacuum chamber, an ElectroStatic Chuck (ESC), an antenna unit, and an antenna cover. The vacuum chamber has a hollow interior and is sealed at a top. The ESC disposed at an internal center of the vacuum chamber receives an external bias Radio Frequency (RF). The antenna unit covers and seals the through-hole of an insulating vacuum plate. The antenna cover covers a top of the antenna unit and has a gas injection port.

Abstract: An apparatus includes a transfer unit under an atmospheric condition and having a robot therein; and at least one process chamber connected to one side of the transfer unit with a slot valve there between, and being alternately under a vacuum condition and under an atmospheric condition.

Abstract: Provided is a plasma generating apparatus. The apparatus includes a vacuum chamber, an ElectroStatic Chuck (ESC), an antenna holder. The vacuum chamber has a hollow interior and is sealed at its top a by a vacuum plate that has a through-hole at its center. The ESC is disposed at an internal center of the vacuum chamber. The antenna unit is disposed within the vacuum chamber under the vacuum plate. The antenna cover covers and is coupled to a top of the antenna unit and receives and forwards an external source RF to the antenna unit. The cover holder is caught by an upper surface of the vacuum plate and suspends and holds the antenna unit.

Abstract: Provided is a plasma generating apparatus. The apparatus includes a vacuum, an ElectroStatic Chuck (ESC), and an antenna unit. The vacuum chamber has a hollow interior and is sealed at its top by a vacuum plate that has a plurality of gas jet holes. The ESC is disposed at an internal center of the vacuum chamber. The antenna unit covers and seals the gas jet holes with being spaced a predetermined distance apart from a surface of the vacuum plate, has a gas inlet communicating with the gas jet holes, and receives an external source RF.

Abstract: An apparatus includes a transfer unit under an atmospheric condition and having a robot therein; and at least one process chamber connected to one side of the transfer unit with a slot valve there between, and being alternately under a vacuum condition and under an atmospheric condition.

Abstract: An apparatus includes a transfer unit under an atmospheric condition and having a robot therein; and at least one process chamber connected to one side of the transfer unit with a slot valve there between, and being alternately under a vacuum condition and under an atmospheric condition.

Abstract: Provided is a plasma generating apparatus. The plasma generating apparatus includes a vacuum chamber, an ElectroStatic Chuck (ESC), an antenna unit, and an antenna cover. The vacuum chamber has a hollow interior and is sealed at a top. The ESC disposed at an internal center of the vacuum chamber receives an external bias Radio Frequency (RF). The antenna unit covers and seals the through-hole of an insulating vacuum plate. The antenna cover covers a top of the antenna unit and has a gas injection port.

Abstract: A gas diffusion plate supplying process gases into a chamber of an ICP (inductively coupled plasma) etcher is provided in the present invention. The gas diffusion plate includes a porous plate comprised of a plurality of balls and formed by compressing and curing the plurality of balls, the porous plate having a circular planar shape; a plurality of gas flow grooves formed on an upper surface of the porous plate; and a gas distribution plate having a plurality of gas-feed holes at the bottom thereof and a plurality of gas-feed passages in the side portion thereof, the gas distribution plate surrounding lower and side portions of the porous plate.

Abstract: An apparatus includes a transfer unit under an atmospheric condition and having a robot therein; and at least one process chamber connected to one side of the transfer unit with a slot valve there between, and being alternately under a vacuum condition and under an atmospheric condition.

Abstract: A memory comprises a gate oxide layer formed on a semiconductor substrate; an ion trap region formed in a corner portion of the gate oxide layer; a floating gate formed on the gate oxide layer; a dielectric layer formed on the floating gate; a control gate formed on the dielectric layer; a spacer provided along side walls of a formed gate; an LDD formed under the spacer on the semiconductor substrate, the LDD being doped at a low concentration with impurities; and a source/drain region formed on an element region of the semiconductor substrate contacting the LDD, the source/drain region being doped at a high concentration with impurities. In one embodiment, the ion trap region is formed by performing ion injection into a corner portion of the gate oxide after the gate, including the control gate and the floating gate, is formed.

Abstract: An electrostatic chuck includes: a metal plate; a dielectric layer on the metal plate, the dielectric layer and the metal plate having a lift pin hole and an injection hole of a cooling gas; a lift pin moving up-and-down through the lift pin hole; first protection insulator on an inner surface of the lift pin hole; and second protection insulator on an inner surface of the injection hole.

Abstract: An impedance matching circuit for a plasma source includes: a first network including: a first coil; and a RF power supply applying a first voltage to the first coil; and a second network including; a second coil grounded having a second voltage, the second voltage being lower than the first voltage; first and second reactive elements, one end portion of the first and second reactive elements being connected to each end portion of the second coil, respectively; and a load connected to the other end portions of the first and second reactive elements, phases at two end portions of the load being different from each other.

Abstract: Disclosed is an apparatus for generating ICP, which has a heater having a hot wire as a heating source for heating elements in a chamber and inner wall of the chamber and also efficiently transfers heat of the heater through a heat transferring gas to the elements in the chamber and the inner wall of the chamber. According to the present invention, the elements in the chamber and the inner wall of the chamber can be heated up to a temperature of about 200° C., thereby reducing the adhesion of the by-product served as the source generating the undesirable particles. In addition, since the hot wire having a longer life span than the halogen lamp is used as heat radiating means, the life span of the apparatus is also increased.

Abstract: Disclosed is a parallel resonance antenna comprising: a whirl antenna having a plurality of antenna units installed two-dimensionally and radially around a central point, each of the antenna units having a ground point at a predetermined position thereof, portions outside the ground points respectively being bent in a same direction, the antenna units having a same size and direction, angles between the antenna units at the central point being all the same; a central conductive line connected to the central point to be normal to the whirl antenna, for being supplied with an RF power; a metal plate installed over and apart from the whirl antenna, the metal plate being connected with end portions of the antenna units, and having a penetration hole through which the central conductive line passes without contacting with the metal plate; and a variable resonance capacitor installed in series between the central conductive line and the metal plate.

Abstract: A gas diffusion plate supplying process gases into a chamber of an ICP (inductively coupled plasma) etcher is provided in the present invention. The gas diffusion plate includes a porous plate comprised of a plurality of balls and formed by compressing and curing the plurality of balls, the porous plate having a circular planar shape; a plurality of gas flow grooves formed on an upper surface of the porous plate; and a gas distribution plate having a plurality of gas-feed holes at the bottom thereof and a plurality of gas-feed passages in the side portion thereof, the gas distribution plate surrounding lower and side portions of the porous plate.

Abstract: In a plasma generating apparatus including a reaction chamber for providing a reaction space cut off from the outside; a plasma electrode installed at the outer upper portion of the reaction chamber, receiving high frequency power from the outside and generating plasma inside the reaction chamber; a grid horizontally installed to the reaction space, dividing the reaction space into an upper plasma generating space and a lower processing space and having plural through holes connecting the upper and lower spaces; an upper gas injector for providing gas to the plasma generating space; a lower gas injector for providing gas to the processing space; and a substrate supporting board installed to the processing space to be horizontally mounted with a substrate, by installing the grid in the reaction space, injecting inert gas through the upper gas injector and injecting process gas such as CxFy, etc. through the lower gas injector, a selective etching ratio of SiO2 can be improved.

Abstract: An electrostatic chuck includes: a metal plate; a dielectric layer on the metal plate, the dielectric layer and the metal plate having a lift pin hole and an injection hole of a cooling gas; a lift pin moving up-and-down through the lift pin hole; first protection insulator on an inner surface of the lift pin hole; and second protection insulator on an inner surface of the injection hole.

Abstract: Disclosed are an RF integrated circuit and method for manufacturing the same. The RF integrated circuit comprises an insulating layer including a plurality of windows; epitaxial silicon layers separately formed on the insulating layer; semiconductor elements formed on the epitaxial silicon layers; a PMD layer formed on the epitaxial silicon layers and the insulating layer, and including contacts that connecting the semiconductor elements; a first metal wiring layer formed on the PMD layer; an IMD layer formed on the first metal wiring layer, and including vias connecting the first metal wiring layer; a second metal wiring layer formed on the IMD layer; and a capping layer formed on the second metal wiring layer.