Abstract: A spiral phase plate, according to one embodiment, for generating a Laguerre Gaussian beam by reflecting an incident beam emitted from a light source, may comprise: a first quadrant area in which the step height increase rate per unit angle decreases progressively in one direction from the point with the lowest step height to the point with the highest step height; and a second quadrant area in which the step height increase rate per unit angle increases progressively in the one direction.

Abstract: A spiral phase plate, according to one embodiment, for generating a Laguerre Gaussian beam by reflecting an incident beam emitted from a light source, may comprise: a first quadrant area in which the step height increase rate per unit angle decreases progressively in one direction from the point with the lowest step height to the point with the highest step height; and a second quadrant area in which the step height increase rate per unit angle increases progressively in the one direction.

Abstract: Embodiments relate to an activated platelet preservation composition, a method for preserving activated platelet, and a preserved activated platelet using the same. According to at least one embodiment, there is provided an activated platelet preservation composition including a divalent cation, chloride, vitamin B, a selenium source and a solvent, a kit using the same, a method for preserving an activated platelet, and a preserved activated platelet using the same. According to various embodiments, it is possible to obtain and preserve platelets, which are positive for CD61 and CD62p and negative for PAC-1 among cell markers.

Abstract: There is provided a semi-circular resonator using a whispering gallery mode (WGM) and an optical sensor using the same. Accordingly, an active region that is a waveguide of an active layer in which laser oscillation is caused by gains of advancing beams is deeply etched in a semi-circular or semi-ring shape.

Abstract: The disclosure relates to an activated platelet preservation composition, a method for preserving activated platelet and a preserved activated platelet using the same. Here, the disclosure relates to an activated platelet preservation composition comprising a divalent cation, chloride, vitamin B, a selenium source and a solvent, a kit using the same, a method for preserving an activated platelet, and a preserved activated platelet using the same. According to the disclosure, it is possible to obtain and preserve platelets, which are positive for CD61 and CD62p and negative for PAC-1 among cell markers.

Abstract: Embodiments relate to an activated platelet preservation composition, a method for preserving activated platelet, and a preserved activated platelet using the same. According to at least one embodiment, there is provided an activated platelet preservation composition including a divalent cation, chloride, vitamin B, a selenium source and a solvent, a kit using the same, a method for preserving an activated platelet, and a preserved activated platelet using the same. According to various embodiments, it is possible to obtain and preserve platelets, which are positive for CD61 and CD62p and negative for PAC-1 among cell markers.

Abstract: There is provided a semi-circular resonator using a whispering gallery mode (WGM) and an optical sensor using the same. Accordingly, an active region that is a waveguide of an active layer in which laser oscillation is caused by gains of advancing beams is deeply etched in a semi-circular or semi-ring shape.

Abstract: The present invention relates to an activated platelet preservation composition, a method for preserving activated platelet and a preserved activated platelet using the same. Here, the inventive feature relates to an activated platelet preservation composition comprising a divalent cation, chloride, vitamin B, a selenium source and a solvent, a kit using the same, a method for preserving an activated platelet, and a preserved activated platelet using the same.

Abstract: Provided is an optical device delaying light by using negative Goos-Hanchen shift. The optical device includes an optical waveguide adapted to guide and emit an incident light, a first reflection layer disposed at one side of the optical waveguide, and a second reflection layer disposed at the other side of the optical waveguide. At least one of the first and the second reflection layers is made of a material having characteristics of negative Goos-Hanchen shift.

Abstract: The apparatus for a perpendicular type ultra vacuum chemical vapor deposition, which is for growing an epitaxy crystal as a semiconductor thin film based on a high quality, includes a growth chamber having a quartz tube of a heterostructure for maintaining a uniformity in a growth of an epitaxial layer under a high vacuum and minimizing a thermal transfer from a wafer; a wafer transferring chamber having a perpendicular transfer device for vertically transferring the wafer on which the epitaxial layer grows; a buffer chamber for preventing a stress to a transfer gear caused by a pressure difference with the wafer transferring chamber in vertically transferring the wafer; and a loadlock chamber for reducing a pollution from the outside in the growth of the epitaxial layer, horizontally transferring the wafer completed in the growth of the epitaxial layer, and discharging it to the outside.

Abstract: There is disclosed a method for fabricating a SiGe MODFET device using a metal oxide film. The present invention provides a SiGe MODFET device with improved operation speed and reduced non-linear operation characteristic caused in a single channel structure devices, by increasing the mobility of the carriers in the SiGe MODEFT having a metal-oxide gate, and method of fabricating the same. In order to accomplish the above object, the present invention grows a silicon buffer layer and a SiGe buffer layer on a silicon substrate by low-temperature process, so that defects caused by the mismatch of the lattice constants being applied to the epitaxial layer from the silicon substrate are constrained in the buffer layered formed by the low-temperature process.

Abstract: There is disclosed a method for fabricating a SiGe MODFET device using a metal oxide film. The present invention provides a SiGe MODFET device with improved operation speed and reduced non-linear operation characteristic caused in a single channel stricture devices, by increasing the mobility of the carriers in the SiGe MODEFT having a metal-oxide gate, and method of fabricating the same. In order to accomplish the above object, the present invention grows a silicon buffer layer and a SiGe buffer layer on a silicon substrate by low-temperature process, so that defects caused by the mismatch of the lattice constants being applied to the epitaxial layer from the silicon substrate are constrained in the buffer layered formed by the low-temperature process.

Abstract: The apparatus for a perpendicular type ultra vacuum chemical vapor deposition, which is for growing an epitaxy crystal such as Si, SiGe, and SiGe:C as a semiconductor thin film based on a high quality, includes a growth chamber having a quartz tube of a heterostructure for maintaining a uniformity in a growth of an epitaxial layer under a high vacuum and minimizing a thermal transfer from a wafer; a wafer transferring chamber connected to a lower side of the growth chamber, said wafer transferring chamber having a perpendicular transfer device for vertically transferring the wafer on which the epitaxial layer grows; a buffer chamber equipped in a lower side of the wafer transferring chamber, for preventing a stress to a transfer gear caused by a pressure difference with the wafer transferring chamber in vertically transferring the wafer; and a loadlock chamber connected to one side of the wafer transferring chamber, for reducing a pollution from the outside in the growth of the epitaxial layer, horizontally t