Patents by Inventor Hong-Syuan Chen

Hong-Syuan Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150295022
    Abstract: A method for preparing a scandium-doped hafnium oxide film, includes preparing a hafnium target having scandium granules distributed on a peripheral surface thereof; and proceeding a sputtering process to form a scandium-doped hafnium oxide film on a substrate, wherein the scandium doping of the scandium-doped hafnium oxide film is in the range of 3-13%. Such scandium-doped hafnium oxide film is able to be used as an oxide layer in semiconductor element which effectively suppresses the current leakage and reduces the dimension of the semiconductor element.
    Type: Application
    Filed: June 1, 2015
    Publication date: October 15, 2015
    Inventors: Yi-Lung Tsai, Hui-Yun Bor, Chao-Nan Wei, Yuan-Pang Wu, Sea-Fue Wang, Hong-Syuan Chen
  • Publication number: 20150041731
    Abstract: A method for preparing scandium-doped hafnium oxide film includes preparing a hafnium target having scandium granules distributed on a peripheral surface thereof; and proceeding a sputtering process to form a scandium-doped hafnium oxide film on a substrate, wherein the scandium doping of the scandium-doped hafnium oxide film is in the range of 3-13%. Such scandium-doped hafnium oxide film is able to be used as an oxide layer in semiconductor element which effectively suppresses the current leakage and reduces the dimension of the semiconductor element.
    Type: Application
    Filed: August 9, 2013
    Publication date: February 12, 2015
    Applicant: Chung-Shan Institute of Science and Technology Armaments Bureau, Ministry of National Defense
    Inventors: Yi-Lung Tsai, Hui-Yun Bor, Chao-Nan Wei, Yuan-Pang Wu, Sea-Fue Wang, Hong-Syuan Chen