Abstract: A photo resist layer is used to protect a dielectric layer and conductive elements embedded in the dielectric layer when patterning an etch stop layer underlying the dielectric layer. The photo resist layer may further be used to etch another dielectric layer underlying the etch stop layer, where etching the next dielectric layer exposes a contact, such as a gate contact. The bottom layer can be used to protect the conductive elements embedded in the dielectric layer from a wet etchant used to etch the etch stop layer.

Abstract: A semiconductor structure includes: an etch-stop dielectric layer overlying a substrate and including a first opening therethrough; a silicon oxide plate overlying the etch-stop dielectric layer and including a second opening therethrough; a first conductive structure including a first electrode and extending through the second opening and the first opening; a memory film contacting a top surface of the first conductive structure and including a material that provides at least two resistive states having different electrical resistivity; and a second conductive structure including a second electrode and contacting a top surface of the memory film.

Abstract: A surface modification method of an aluminum nitride ceramic substrate uses a sputtering deposition and a metal organic chemical vapor deposition (MOCVD) to perform a surface modification of the polycrystalline aluminum nitride ceramic substrate. Accordingly, an aluminum nitride layer is epitaxially grown in two stages of temperature by MOCVD, such that a crystallization phase of monocrystalline aluminum nitride material may be formed on the surface of the polycrystalline aluminum nitride ceramic substrate, so as to decrease a surface roughness of the polycrystalline aluminum nitride ceramic substrate.

Abstract: The present invention uses a photolithography process and an electroplating process to perform. TAV copper filling and patterning of the fabrication of the double side copper-plated layers to plate the double side copper-plated layers in advance at the TAV through holes to serve as a stress buffer layer of the aluminum nitride substrates. Then the subsequent pattern designs of the copper-plated layers are customized. According to the simulation theory calculations, it is proved that the stress which accumulates on the short-side of the copper-plated layer of the aluminum nitride substrate with the asymmetric structure may be effectively reduced to facilitate the improvement of the reliability of the aluminum nitride substrate.

Abstract: The present invention uses a photolithography process and an electroplating process to perform. TAV copper filling and patterning of the fabrication of the double side copper-plated layers to plate the double side copper-plated layers in advance at the TAV through holes to serve as a stress buffer layer of the aluminum nitride substrates. Then the subsequent pattern designs of the copper-plated layers are customized. According to the simulation theory calculations, it is proved that the stress which accumulates on the short-side of the copper-plated layer of the aluminum nitride substrate with the asymmetric structure may be effectively reduced to facilitate the improvement of the reliability of the aluminum nitride substrate.

Abstract: A method and apparatus for making a fixed abrasive grain wire includes, at first, inserting a wire through a sleeve that includes at least one aperture defined therein. Then, both of the wire and the sleeve are located in electroplating or electro-less plating liquid that includes abrasive grains blended therein. Finally, electroplating or electro-less plating is executed to fix some of the abrasive grains to the wire.

Abstract: A method and apparatus for making a fixed abrasive grain wire includes, at first, inserting a wire through a sleeve that includes at least one aperture defined therein. Then, both of the wire and the sleeve are located in electroplating or electro-less plating liquid that includes abrasive grains blended therein. Finally, electroplating or electro-less plating is executed to fix some of the abrasive grains to the wire.