Abstract: A semiconductor device includes a rigid flex circuit that has a first rigid region and a second rigid region that are electrically connected by a flexible portion. A first die is mounted to a first side of the first rigid region. A second die is mounted to a second side of the second rigid region. The first and second sides are on opposite sides of the rigid flex circuit. The flexible portion is bent to hold the first and second rigid regions in generally vertical alignment with each other.

Abstract: Implementations described herein relate to various semiconductor device assemblies. In some implementations, semiconductor device assembly includes a first redistribution layer and a second redistribution layer, a first semiconductor die disposed between the first redistribution layer and the second redistribution layer and connected to the first redistribution layer, and a second semiconductor die disposed between the first redistribution layer and the second redistribution layer and connected to the second redistribution layer. The first semiconductor die may have an active surface and a back surface opposite the active surface of the first semiconductor die. The second semiconductor die may have an active surface and a back surface opposite the active surface of the second semiconductor die. The second semiconductor die may be stacked on the first semiconductor die with the back surface of the second semiconductor die facing the back surface of the first semiconductor die.

Abstract: Techniques are disclosed for the use of fused vector processor instructions by a vector processor architecture. Each fused vector processor instruction may include a set of fields associated with individual vector processing instructions. The vector processor architecture may implement local buffers facilitating a single vector processor instruction to be used to execute each of the individual vector processing instructions without re-accessing vector registers between each executed individual vector processing instruction. The vector processor architecture enables less communication across the interconnection network, thereby increasing interconnection network bandwidth and the speed of computations, and decreasing power usage.

Abstract: Implementations described herein relate to techniques and apparatuses related to a structure that may be used for characterizing properties related to an interfacial adhesion strength between an epoxy mold compound and a vertical edge of a semiconductor die included in a semiconductor die package. The techniques and apparatuses may be used to provide a more comprehensive understanding of interfacial adhesion strengths within the semiconductor die package relative to techniques available in semiconductor industry standards.

Abstract: Semiconductor devices having three-dimensional bonding schemes and associated systems and methods are disclosed herein. In some embodiments, the semiconductor device includes a package substrate, a stack of semiconductor dies carried by the package substrate, and an interconnect module carried by the package substrate adjacent the stack of semiconductor dies. The stack of semiconductor dies can include a first die carried by the package substrate and a second die carried by the first die. Meanwhile, the interconnect module can include at least a first tier and a second tier. The first tier can be carried by and electrically coupled to the package substrate, and the second tier can be carried by and electrically coupled to the first tier. In turn, the second die can be electrically coupled to the second tier.

Abstract: Substrates for semiconductor packages, including hybrid substrates for decoupling capacitors, and associated devices, systems, and methods are disclosed herein. In one embodiment, a substrate includes a first pair and a second pair of electrical contacts on a first surface of the substrate. The first pair of electrical contacts can be configured to receive a first surface-mount capacitor, and the second pair of electrical contacts can be configured to receive a second surface-mount capacitor. The first pair of electrical contacts can be spaced apart by a first space, and the second pair of electrical contacts can be spaced apart by a second space. The first and second spaces can correspond to corresponding to first and second distances between electrical contacts of the first and second surface-mount capacitors.

Abstract: A semiconductor package including a package substrate with an upper surface, a controller, and a die stack. The controller and the die stack are at the upper surface. The die stack includes a shingled sub-stack of semiconductor dies, a reverse-shingled sub-stack of semiconductor dies, and a bridging chip. The bridging chip is bonded between the shingled sub-stack and the reverse-shingled sub-stack, and has an internal trace. A first wire segment is bonded between the controller and a first end of the bridging chip, and a second wire segment is bonded between a second end of the bridging chip and each semiconductor die of the shingled sub-stack. The internal trace electrically couples the first and second wire segments. Additionally, a third wire segment is bonded between the controller and each semiconductor die of the reverse-shingled sub-stack.

Abstract: An apparatus includes selectable a circuit placement mechanism configured to support two or more different circuit layouts. The circuit placement mechanism may include an overlap of electrical connections associated with the two or more circuit layouts and joined through an etch back selector. The etch back selector may enable the apparatus to function according to a selected one of the two or more different circuit layouts.

Abstract: Semiconductor devices having three-dimensional bonding schemes and associated systems and methods are disclosed herein. In some embodiments, the semiconductor device includes a package substrate, a stack of semiconductor dies carried by the package substrate, and an interconnect module carried by the package substrate adjacent the stack of semiconductor dies. The stack of semiconductor dies can include a first die carried by the package substrate and a second die carried by the first die. Meanwhile, the interconnect module can include at least a first tier and a second tier. The first tier can be carried by and electrically coupled to the package substrate, and the second tier can be carried by and electrically coupled to the first tier. In turn, the second die can be electrically coupled to the second tier.

Abstract: The present disclosure features signal-regulatory protein ? (SIRP-?) polypeptides and constructs that are useful, e.g., to target a cell (e.g., a cancer cell or a cell of the immune system), to increase phagocytosis of the target cell, to eliminate immune cells such as regulatory T-cells, to kill cancer cells, to treat a disease (e.g., cancer) in a subject, or any combinations thereof. The SIRP-? constructs include a high affinity SIRP-? D1 domain or variant thereof that binds CD47 with higher affinity than a wild-type SIRP-?. The SIRP-? polypeptides or constructs include a SIRP-? D1 variant fused to an Fc domain monomer, a human serum albumin (HSA), an albumin-binding peptide, or a polyethylene glycol (PEG) polymer. Compositions provided herein include (i) a polypeptide including a signal-regulatory protein ? (SIRP-?) D1 variant and (ii) an antibody.

Abstract: Implementations described herein relate to various semiconductor device assemblies. In some implementations, a semiconductor device assembly includes a circuit substrate comprising a first substrate surface and a second substrate surface arranged opposite to the first substrate surface; at least one die arranged on the first substrate surface; a package casing disposed over the first substrate surface, wherein the package casing encapsulates the at least one die and covers at least part of the first substrate surface; a plurality of conductive interconnect structures coupled to the second substrate surface, wherein the plurality of conductive interconnect structures are electrically coupled to the at least one die via the circuit substrate; and at least one molded compound structure arranged on the second substrate surface, wherein the at least one molded compound structure is configured to reduce a coplanarity of the plurality of conductive interconnect structures.

Abstract: Provided are methods of treating cancer that comprise administering a polypeptide (e.g. a fusion polypeptide) that comprises a SIRP? D1 domain variant and an Fc domain variant in combination with at least one chemotherapy agent and/or at least one therapeutic antibody. Also provided are related kits.

Abstract: At least one embodiment of a semiconductor device assembly include a cross-stack substrate can comprise an assembly substrate including an upper surface, a first and second die stack at the upper surface, and a cross-stack substrate spaced from the upper surface. The first and second die stacks can each include multiple semiconductor dies in electric communication with the assembly substrate, and the cross-stack substrate can be coupled to and extending between a first and a second semiconductor die of the first and second die stacks, respectively. A passive semiconductor component can be carried by the cross-stack substrate, and can be in electric communication with the assembly substrate. Further, the passive semiconductor component can be in electric communication with the first semiconductor die of the first die stack exclusively via the assembly substrate.

Abstract: A microelectronic device includes a controller device, a first die vertically overlying the controller device, a second die vertically overlying the first die, and a wire. The first die includes a first pad horizontally separated from a horizontal center of the controller device by a first distance. The second die includes a second pad horizontally separated from the horizontal center of the controller device by a second distance larger than the first distance. The wire contacts the first pad of the first die and the second pad of the second die. Memory device packages and electronic systems are also disclosed.

Abstract: The subject application relates to reinforced semiconductor device packaging and associated systems and methods. The device generally includes a substrate and one or more integrated circuit dies electrically coupled to the substrate with wire bonds. The device includes an encapsulant enclosing the one or more dies and the wire bonds. The package can include a reinforcing layer positioned on one or more surfaces of the encapsulant, a reinforcing wire extending through the encapsulant, or entrained reinforcing fiber portions positioned throughout the encapsulant. The reinforcing layer can be textile woven from synthetic or natural fibers, such as aramid, carbon, or glass. The package can be formed by disposing a reinforcing textile layer in a mold, placing a die and substrate in the mold with a liquid encapsulant, and hardening the liquid encapsulant to adhere the reinforcing textile layer, the encapsulant, the die, and the substrate together.

Abstract: A microelectronic device package assembly includes a package board and a stiffener device attached to the package board. The package board has a first side and a second side. The stiffener device includes an upper stiffener, a lower stiffener, and one or more damper device. The upper stiffener is above the first side of the package board and has a die side and a package side. The lower stiffener is interposed between the upper stiffener and the package board and has a damper side and a board side. The lower stiffener includes through-package anchors extending from the board side and through the package board. The one or more damper devices are interposed between and are in contact with each of the upper stiffener and the lower stiffener. Microelectronic devices and electronic systems are also described.

Abstract: A variety of applications can include systems with packaged electronic devices having multiple dies arranged on a substrate with a downset design. A substrate with a downset design can include an upper portion and a lower portion with a downset portion connecting the upper portion to the lower portion. The downset portion can include through vias to provide conductive paths between the lower portion and the upper portion. Dies can be positioned with a region defined by walls of the downset portion with a non-conductive film covering the dies in the region defined by walls of the downset portion. Additional dies can be positioned on the non-conductive film and the upper portion of the substrate. A packaged electronic device having a substrate with a downset design can be implemented to raise the neutral axis of the packaged electronic device to near the top surface of the dies.

Abstract: Stacked semiconductor die assemblies with die support members and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a package substrate, a first semiconductor die attached to the package substrate, and a support member attached to the package substrate. The support member can be separated from the first semiconductor die, and a second semiconductor die can have one region coupled to the support member and another region coupled to the first semiconductor die.

Abstract: Some implementations described herein are directed to a semiconductor die package including a stacked die arrangement. The semiconductor die package includes one or more legged support structures between respective overhang portions of the stacked die arrangement and a substrate of the semiconductor die package. The one or more legged support structures may reduce a likelihood of the respective overhang portions deflecting during manufacturing of the semiconductor die package. By reducing the likelihood of the overhang portions deflecting, a quality and reliability of the semiconductor die package may be improved.

Abstract: A microelectronic device package includes a stack of semiconductor dies positioned over a substrate. The microelectronic device package further includes an interposer structure coupled to the stack of semiconductor dies. The microelectronic device package further includes an electronic component directly coupled to the interposer structure and electrically coupled to the substrate through an electrical connection between the interposer structure and the substrate.