Abstract: A computer system acquires a video bitstream. The video bitstream includes data associated with multiple encoded pictures. Each encoded picture includes one or more coding units (CUs). While decoding a current CU of a picture in the video bitstream, the current CU having a plurality of reference subblocks located in one or more reference pictures, in accordance with a determination that the plurality of reference subblocks satisfy a first set of predefined conditions for enabling a subblock-based temporal motion vector prediction (SbTMVP) mode, the computer system retrieves, from the video bitstream, syntax elements associated with the SbTMVP mode. The computer system then decodes the current CU using the retrieved syntax elements associated with the SbTMVP mode.

Abstract: A semiconductor structure includes: an etch-stop dielectric layer overlying a substrate and including a first opening therethrough; a silicon oxide plate overlying the etch-stop dielectric layer and including a second opening therethrough; a first conductive structure including a first electrode and extending through the second opening and the first opening; a memory film contacting a top surface of the first conductive structure and including a material that provides at least two resistive states having different electrical resistivity; and a second conductive structure including a second electrode and contacting a top surface of the memory film.

Abstract: A semiconductor structure includes a first dielectric layer over a first conductive line and a second conductive line, a high resistance layer over a portion of the first dielectric layer, a second dielectric layer on the high resistance layer, a low-k dielectric layer over the second dielectric layer, a first conductive via extending through the low-k dielectric layer and the second dielectric layer, and a second conductive via extending through the low-k dielectric layer and the first dielectric layer to the first conductive line. The first conductive via extends into the high resistance layer.

Abstract: The present disclosure is directed to formation of a low-k spacer. For example, the present disclosure includes an exemplary method of forming the low-k spacer. The method includes depositing the low-k spacer and subsequently treating the low-k spacer with a plasma and/or a thermal anneal. The low-k spacer can be deposited on a structure protruding from the substrate. The plasma and/or thermal anneal treatment on the low-k spacer can reduce the etch rates of the spacer so that the spacer is etched less in subsequent etching or cleaning processes.

Abstract: The present disclosure is directed to formation of a low-k spacer. For example, the present disclosure includes an exemplary method of forming the low-k spacer. The method includes depositing the low-k spacer and subsequently treating the low-k spacer with a plasma and/or a thermal anneal. The low-k spacer can be deposited on a structure protruding from the substrate. The plasma and/or thermal anneal treatment on the low-k spacer can reduce the etch rates of the spacer so that the spacer is etched less in subsequent etching or cleaning processes.

Abstract: The present disclosure is directed to formation of a low-k spacer. For example, the present disclosure includes an exemplary method of forming the low-k spacer. The method includes depositing the low-k spacer and subsequently treating the low-k spacer with a plasma and/or a thermal anneal. The low-k spacer can be deposited on a structure protruding from the substrate. The plasma and/or thermal anneal treatment on the low-k spacer can reduce the etch rates of the spacer so that the spacer is etched less in subsequent etching or cleaning processes.

Abstract: The present disclosure is directed to formation of a low-k spacer. For example, the present disclosure includes an exemplary method of forming the low-k spacer. The method includes depositing the low-k spacer and subsequently treating the low-k spacer with a plasma and/or a thermal anneal. The low-k spacer can be deposited on a structure protruding from the substrate. The plasma and/or thermal anneal treatment on the low-k spacer can reduce the etch rates of the spacer so that the spacer is etched less in subsequent etching or cleaning processes.

Abstract: The present disclosure is directed to formation of a low-k spacer. For example, the present disclosure includes an exemplary method of forming the low-k spacer. The method includes depositing the low-k spacer and subsequently treating the low-k spacer with a plasma and/or a thermal anneal. The low-k spacer can he deposited on a structure protruding from the substrate. The plasma and/or thermal anneal treatment on the low-k spacer can reduce the etch rates of the spacer so that the spacer is etched less in subsequent etching or cleaning processes.

Abstract: Embodiments are directed to managing shared certificates of a role certificate store, accessing and implementing certificates provided by a role certificate store and to managing role-based shared certificates using a role certificate store. In one scenario, a computer system establishes a role certificate store. The role certificate store is configured to store role-based shared certificates, where each role-based shared certificate corresponds to instances of a specified role. The computer system receives a request for a role-based shared certificate from an instance of the specified role, where the request is redirected from a local data store to the role certificate store. The computer system then verifies that the request was received from an instance of the specified role and sends the requested role-based shared certificate to the role instance.

Abstract: An apparatus for assembling a post-CMP cleaning brush. The post-CMP cleaning brush is provided with a brush core and an outer brush, and the outer brush is provided with a hollow portion. The apparatus comprises a base, a fixed member, a sliding member, a plurality of posts, and an actuating device. The base holds the brush core and the outer brush, and the fixed member is disposed on the base. The sliding member is disposed on the base in a manner such that it is located at the opposite side of the fixed member relative to the outer brush disposed on the base. The posts, disposed on the sliding member, pass through the fixed member and the hollow portion of the outer brush so as to assist the brush core in passing through the hollow portion of the outer brush. The actuating device connects with the brush core so as to pass the brush core through the hollow portion of the outer brush and separate the posts, inserted into the outer brush, from the outer brush.

Abstract: An apparatus for assembling a post-CMP cleaning brush. The post-CMP cleaning brush is provided with a brush core and an outer brush, and the outer brush is provided with a hollow portion. The apparatus comprises a base, a fixed member, a sliding member, a plurality of posts, and an actuating device. The base holds the brush core and the outer brush, and the fixed member is disposed on the base. The sliding member is disposed on the base in a manner such that it is located at the opposite side of the fixed member relative to the outer brush disposed on the base. The posts, disposed on the sliding member, pass through the fixed member and the hollow portion of the outer brush so as to assist the brush core in passing through the hollow portion of the outer brush. The actuating device connects with the brush core so as to pass the brush core through the hollow portion of the outer brush and separate the posts, inserted into the outer brush, from the outer brush.