Abstract: An electronic circuit is disclosed. The electronic circuit includes a transistor having a gate terminal, a source terminal and a drain terminal, and a gate driver circuit including a pull-down transistor coupled to the gate terminal, and an input terminal arranged to receive an input signal and generate a corresponding output signal at an output terminal coupled to the gate terminal, where the gate driver circuit is arranged to store energy harvested from the input signal and use the stored energy to change a conductive state of the pull-down transistor. In one aspect, the transistor includes gallium nitride (GaN). In another aspect, the pull-down transistor includes GaN.

Abstract: An electronic circuit is disclosed. The electronic circuit includes a transistor having a gate terminal, a source terminal and a drain terminal, and a gate driver circuit including a pull-down transistor coupled to the gate terminal, and an input terminal arranged to receive an input signal and generate a corresponding output signal at an output terminal coupled to the gate terminal, where the gate driver circuit is arranged to store energy harvested from the input signal and use the stored energy to change a conductive state of the pull-down transistor. In one aspect, the transistor includes gallium nitride (GaN). In another aspect, the pull-down transistor includes GaN.

Abstract: Circuits and methods that control a rate of change of a drain voltage as a function of time in a transistor are disclosed. In one aspect, the circuit includes a transistor having a gate terminal that controls operation of the transistor, and a control circuit coupled to the gate terminal and arranged to change a voltage at the gate terminal at a first rate of voltage with respect to time from a first voltage to a first intermediate voltage, and further arranged to change the voltage at the gate terminal at a second rate of voltage with respect to time from the first intermediate voltage to a second intermediate voltage, where the first rate is different than the second rate.

Abstract: A circuit is disclosed. The circuit includes a first transistor including a first drain terminal, a first gate terminal and a first source terminal, a depletion-mode transistor including a second drain terminal, a second gate terminal and a second source terminal, the second drain terminal connected to the first drain terminal, the depletion-mode transistor arranged to sense a first voltage at the first drain terminal and generate a second voltage at the second source terminal, and a comparator arranged to receive the second voltage, and transition the first transistor from an on state to an off state in response to the first transistor entering its saturation region of operation. In one aspect, the first transistor includes gallium nitride (GaN). In another aspect, the circuit further includes a logic circuit arranged to receive an output voltage generated by the comparator and to drive the first gate terminal.

Abstract: Circuits and methods that control a rate of change of a drain voltage as a function of time in a transistor are disclosed. In one aspect, the circuit includes a transistor having a gate terminal that controls operation of the transistor, and a control circuit coupled to the gate terminal and arranged to change a voltage at the gate terminal at a first rate of voltage with respect to time from a first voltage to a first intermediate voltage, and further arranged to change the voltage at the gate terminal at a second rate of voltage with respect to time from the first intermediate voltage to a second intermediate voltage, where the first rate is different than the second rate.

Abstract: A circuit is disclosed. The circuit includes a first transistor including a first drain terminal, a first gate terminal and a first source terminal, a depletion-mode transistor including a second drain terminal, a second gate terminal and a second source terminal, the second drain terminal connected to the first drain terminal, the depletion-mode transistor arranged to sense a first voltage at the first drain terminal and generate a second voltage at the second source terminal, and a comparator arranged to receive the second voltage, and transition the first transistor from an on state to an off state in response to the first transistor entering its saturation region of operation. In one aspect, the first transistor includes gallium nitride (GaN). In another aspect, the circuit further includes a logic circuit arranged to receive an output voltage generated by the comparator and to drive the first gate terminal.

Abstract: An electronic circuit is disclosed. The electronic circuit includes a transistor having a gate terminal, a source terminal and a drain terminal, and a gate driver circuit including a pull-down transistor coupled to the gate terminal, and an input terminal arranged to receive an input signal and generate a corresponding output signal at an output terminal coupled to the gate terminal, where the gate driver circuit is arranged to store energy harvested from the input signal and use the stored energy to change a conductive state of the pull-down transistor. In one aspect, the transistor includes gallium nitride (GaN). In another aspect, the pull-down transistor includes GaN.

Abstract: Circuits and methods that control a rate of change of a drain voltage as a function of time in a transistor are disclosed. In one aspect, the circuit includes a transistor having a gate terminal that controls operation of the transistor, and a control circuit coupled to the gate terminal and arranged to change a voltage at the gate terminal at a first rate of voltage with respect to time from a first voltage to a first intermediate voltage, and further arranged to change the voltage at the gate terminal at a second rate of voltage with respect to time from the first intermediate voltage to a second intermediate voltage, where the first rate is different than the second rate.

Abstract: A circuit is disclosed. The circuit includes a first transistor including a first drain terminal, a first gate terminal and a first source terminal, a depletion-mode transistor including a second drain terminal, a second gate terminal and a second source terminal, the second drain terminal connected to the first drain terminal, the depletion-mode transistor arranged to sense a first voltage at the first drain terminal and generate a second voltage at the second source terminal, and a comparator arranged to receive the second voltage, and transition the first transistor from an on state to an off state in response to the first transistor entering its saturation region of operation. In one aspect, the first transistor includes gallium nitride (GaN). In another aspect, the circuit further includes a logic circuit arranged to receive an output voltage generated by the comparator and to drive the first gate terminal.

Abstract: An exercise assembly for a chair includes a plurality of elastic members having a central portion extending between a joining member coupled to a bottom of the chair's seat and a fixing member coupled to a base of the chair. The tension force in each elastic member is adjusted by adjusting the height of the chair seat relative to the base to thereby change the distance between the fixing member and the joining member, and is substantially the same in each elastic member since they are generally uniformly stretched.

Abstract: The present invention relates to an exercise assembly for a chair and a chair having such an exercise assembly. The exercise assembly arranged on a chair comprises: a plurality of elastic members; a fixing member comprising a base and a first and second fixing part extending from two sides of the fixing member, each fixing part having a plurality of mounting parts, the number of the mounting parts is corresponding to the number of the elastic members; a joining member having a plurality of joining parts, the number of the joining parts being corresponding to that the number of the elastic members, wherein the joining member is arranged above the fixing member, and the elastic members sequentially pass through the corresponding mounting part of the first fixing member, the corresponding jointing part of the jointing member and the corresponding mounting part of the second fixing member, respectively. An aesthetically advantageous appearance can be obtained in the present invention.

Abstract: An exercise device attachable to the chair is provided which comprises a generally “W”-shaped frame separately mounted on a post of a height-telescopic executive type chair, an elastic band disposed and extending through the W-shaped frame, and a tension adjusting mechanism mounted on the chair and connected to the elastic band. The adjusting mechanism is manipulated to adjust the tension of the elastic strap. The exercise device mounted on the executive chair creates a unique and most serious exercise-station at one's home or office. The tension adjusting mechanism slides up and down with the motion of the chair, and by this action the tension of the elastic band increase or decrease significantly, making the workout routine a challenge or pleasure as per one's choice.

Abstract: An exercise device attachable to the chair is provided which comprises a generally “W”-shaped frame separately mounted on a post of a height-telescopic executive type chair, an elastic band disposed and extending through the W-shaped frame, and a tension adjusting mechanism mounted on the chair and connected to the elastic band. The adjusting mechanism is manipulated to adjust the tension of the elastic strap. The exercise device mounted on the executive chair creates a unique and most serious exercise-station at one's home or office. The tension adjusting mechanism slides up and down with the motion of the chair, and by this action the tension of the elastic band increase or decrease significantly, making the workout routine a challenge or pleasure as per one's choice.