Patents by Inventor Hongwei Jia

Hongwei Jia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240411292
    Abstract: The present invention proposes a method for intelligent management of valve production process data, a medium, and an apparatus. Through results of grid classification of sampling points, the method constructs information entropy of grid distribution density levels as well as grid distribution density, which takes into account the circumstance that sampling points may not exist in the classification space, so as to avoid grids where sampling points do not exist from affecting the local density of the sampling points; secondly, based on the core relative distance of the sampling points in a seed grid, the method constructs a coverage density distance, which takes into account the magnitude of the local density of the sampling points in the seed grid as well as differences in the distance from sampling points that have a relatively large local density in the other seed grids.
    Type: Application
    Filed: June 7, 2024
    Publication date: December 12, 2024
    Inventors: Chunjuan LAN, Kun SONG, Hongwei SONG, Chenglong LI, Jing ZHAO, Hao JIA
  • Patent number: 12119739
    Abstract: An electronic circuit is disclosed. The electronic circuit includes a transistor having a gate terminal, a source terminal and a drain terminal, and a gate driver circuit including a pull-down transistor coupled to the gate terminal, and an input terminal arranged to receive an input signal and generate a corresponding output signal at an output terminal coupled to the gate terminal, where the gate driver circuit is arranged to store energy harvested from the input signal and use the stored energy to change a conductive state of the pull-down transistor. In one aspect, the transistor includes gallium nitride (GaN). In another aspect, the pull-down transistor includes GaN.
    Type: Grant
    Filed: June 29, 2022
    Date of Patent: October 15, 2024
    Assignee: Navitas Semiconductor Limited
    Inventors: Marco Giandalia, Jason Zhang, Hongwei Jia, Daniel M. Kinzer
  • Publication number: 20240310352
    Abstract: The present disclosure relates to a method for analyzing a geological body with the help of physical and chemical properties thereof, and in particular, to a method for identifying an exudative sandstone uranium deposit. With the method for identifying an exudative sandstone uranium deposit according to the embodiments of the present disclosure, an exudative sandstone uranium deposit formed by an exudation metallogenesis may be systematically identified, so as to guide prediction and prospecting evaluation of a uranium deposit in red variegated sandstone formations of a sedimentary basin, avoid ore dislocation and ore leakage, open up new prospecting positions and spaces, and break through new uranium resources.
    Type: Application
    Filed: July 21, 2023
    Publication date: September 19, 2024
    Inventors: Ziying Li, Wusheng Liu, Mingkuan Qin, Yuqi Cai, Qingyin Guo, Feng He, Jun Zhong, Xide Li, Ye Sun, Yunlong Zhang, Weitao Li, Guo Wang, Shengfu Li, Jianfang Cai, Gui Wang, Shan Jiang, Jielin Zhang, Sheng He, Qubo Wu, Zilong Zhang, Chiheng Liu, Linfei Qiu, Hu Liu, Hongwei Ji, Qiang Guo, Pengfei Zhu, Xinyang Liu, Yuyan Zhang, Zhixin Huang, Jian Guo, Meizhi Han, Zhongbo He, Jinrong Lin, Licheng Jia, Junxian Wang, Longsheng Yi, Mingming Tian, Xiaoneng Luo, Bo Peng, Xiaoqian Xiu, Ruixiang Hao, Wenquan Wang, Changfa Yu
  • Publication number: 20240235531
    Abstract: Circuits and methods that control a rate of change of a drain voltage as a function of time in a transistor are disclosed. In one aspect, the circuit includes a transistor having a gate terminal that controls operation of the transistor, and a control circuit coupled to the gate terminal and arranged to change a voltage at the gate terminal at a first rate of voltage with respect to time from a first voltage to a first intermediate voltage, and further arranged to change the voltage at the gate terminal at a second rate of voltage with respect to time from the first intermediate voltage to a second intermediate voltage, where the first rate is different than the second rate.
    Type: Application
    Filed: November 17, 2023
    Publication date: July 11, 2024
    Applicant: NAVITAS SEMICONDUCTOR LIMITED
    Inventors: Hongwei JIA, Santosh SHARMA, Daniel M. KINZER, Victor SINOW, Matthew Anthony TOPP
  • Publication number: 20230421046
    Abstract: A circuit is disclosed. The circuit includes a first transistor including a first drain terminal, a first gate terminal and a first source terminal, a depletion-mode transistor including a second drain terminal, a second gate terminal and a second source terminal, the second drain terminal connected to the first drain terminal, the depletion-mode transistor arranged to sense a first voltage at the first drain terminal and generate a second voltage at the second source terminal, and a comparator arranged to receive the second voltage, and transition the first transistor from an on state to an off state in response to the first transistor entering its saturation region of operation. In one aspect, the first transistor includes gallium nitride (GaN). In another aspect, the circuit further includes a logic circuit arranged to receive an output voltage generated by the comparator and to drive the first gate terminal.
    Type: Application
    Filed: September 7, 2023
    Publication date: December 28, 2023
    Applicant: Navitas Semiconductor Limited
    Inventors: Marco Giandalia, Jason Zhang, Hongwei Jia, Daniel M. Kinzer
  • Patent number: 11855635
    Abstract: Circuits and methods that control a rate of change of a drain voltage as a function of time in a transistor are disclosed. In one aspect, the circuit includes a transistor having a gate terminal that controls operation of the transistor, and a control circuit coupled to the gate terminal and arranged to change a voltage at the gate terminal at a first rate of voltage with respect to time from a first voltage to a first intermediate voltage, and further arranged to change the voltage at the gate terminal at a second rate of voltage with respect to time from the first intermediate voltage to a second intermediate voltage, where the first rate is different than the second rate.
    Type: Grant
    Filed: June 29, 2022
    Date of Patent: December 26, 2023
    Assignee: Navitas Semiconductor Limited
    Inventors: Hongwei Jia, Santosh Sharma, Daniel M. Kinzer, Victor Sinow, Matthew Anthony Topp
  • Patent number: 11791709
    Abstract: A circuit is disclosed. The circuit includes a first transistor including a first drain terminal, a first gate terminal and a first source terminal, a depletion-mode transistor including a second drain terminal, a second gate terminal and a second source terminal, the second drain terminal connected to the first drain terminal, the depletion-mode transistor arranged to sense a first voltage at the first drain terminal and generate a second voltage at the second source terminal, and a comparator arranged to receive the second voltage, and transition the first transistor from an on state to an off state in response to the first transistor entering its saturation region of operation. In one aspect, the first transistor includes gallium nitride (GaN). In another aspect, the circuit further includes a logic circuit arranged to receive an output voltage generated by the comparator and to drive the first gate terminal.
    Type: Grant
    Filed: June 29, 2022
    Date of Patent: October 17, 2023
    Assignee: Navitas Semiconductor Limited
    Inventors: Marco Giandalia, Jason Zhang, Hongwei Jia, Daniel M. Kinzer
  • Publication number: 20230006657
    Abstract: Circuits and methods that control a rate of change of a drain voltage as a function of time in a transistor are disclosed. In one aspect, the circuit includes a transistor having a gate terminal that controls operation of the transistor, and a control circuit coupled to the gate terminal and arranged to change a voltage at the gate terminal at a first rate of voltage with respect to time from a first voltage to a first intermediate voltage, and further arranged to change the voltage at the gate terminal at a second rate of voltage with respect to time from the first intermediate voltage to a second intermediate voltage, where the first rate is different than the second rate.
    Type: Application
    Filed: June 29, 2022
    Publication date: January 5, 2023
    Applicant: Navitas Semiconductor Limited
    Inventors: Hongwei Jia, Santosh Sharma, Daniel M. Kinzer, Victor Sinow, Matthew Anthony Topp
  • Publication number: 20230006658
    Abstract: A circuit is disclosed. The circuit includes a first transistor including a first drain terminal, a first gate terminal and a first source terminal, a depletion-mode transistor including a second drain terminal, a second gate terminal and a second source terminal, the second drain terminal connected to the first drain terminal, the depletion-mode transistor arranged to sense a first voltage at the first drain terminal and generate a second voltage at the second source terminal, and a comparator arranged to receive the second voltage, and transition the first transistor from an on state to an off state in response to the first transistor entering its saturation region of operation. In one aspect, the first transistor includes gallium nitride (GaN). In another aspect, the circuit further includes a logic circuit arranged to receive an output voltage generated by the comparator and to drive the first gate terminal.
    Type: Application
    Filed: June 29, 2022
    Publication date: January 5, 2023
    Applicant: Navitas Semiconductor Limited
    Inventors: Marco Giandalia, Jason Zhang, Hongwei Jia, Daniel M. Kinzer
  • Publication number: 20230006539
    Abstract: An electronic circuit is disclosed. The electronic circuit includes a transistor having a gate terminal, a source terminal and a drain terminal, and a gate driver circuit including a pull-down transistor coupled to the gate terminal, and an input terminal arranged to receive an input signal and generate a corresponding output signal at an output terminal coupled to the gate terminal, where the gate driver circuit is arranged to store energy harvested from the input signal and use the stored energy to change a conductive state of the pull-down transistor. In one aspect, the transistor includes gallium nitride (GaN). In another aspect, the pull-down transistor includes GaN.
    Type: Application
    Filed: June 29, 2022
    Publication date: January 5, 2023
    Applicant: Navitas Semiconductor Limited
    Inventors: Marco Giandalia, Jason Zhang, Hongwei Jia, Daniel M. Kinzer
  • Patent number: 7524271
    Abstract: An exercise assembly for a chair includes a plurality of elastic members having a central portion extending between a joining member coupled to a bottom of the chair's seat and a fixing member coupled to a base of the chair. The tension force in each elastic member is adjusted by adjusting the height of the chair seat relative to the base to thereby change the distance between the fixing member and the joining member, and is substantially the same in each elastic member since they are generally uniformly stretched.
    Type: Grant
    Filed: October 4, 2007
    Date of Patent: April 28, 2009
    Inventors: Joseph Bendavid, Hongwei Jia
  • Publication number: 20080153680
    Abstract: The present invention relates to an exercise assembly for a chair and a chair having such an exercise assembly. The exercise assembly arranged on a chair comprises: a plurality of elastic members; a fixing member comprising a base and a first and second fixing part extending from two sides of the fixing member, each fixing part having a plurality of mounting parts, the number of the mounting parts is corresponding to the number of the elastic members; a joining member having a plurality of joining parts, the number of the joining parts being corresponding to that the number of the elastic members, wherein the joining member is arranged above the fixing member, and the elastic members sequentially pass through the corresponding mounting part of the first fixing member, the corresponding jointing part of the jointing member and the corresponding mounting part of the second fixing member, respectively. An aesthetically advantageous appearance can be obtained in the present invention.
    Type: Application
    Filed: October 4, 2007
    Publication date: June 26, 2008
    Inventors: Joseph Bendavid, Hongwei Jia
  • Patent number: 7223220
    Abstract: An exercise device attachable to the chair is provided which comprises a generally “W”-shaped frame separately mounted on a post of a height-telescopic executive type chair, an elastic band disposed and extending through the W-shaped frame, and a tension adjusting mechanism mounted on the chair and connected to the elastic band. The adjusting mechanism is manipulated to adjust the tension of the elastic strap. The exercise device mounted on the executive chair creates a unique and most serious exercise-station at one's home or office. The tension adjusting mechanism slides up and down with the motion of the chair, and by this action the tension of the elastic band increase or decrease significantly, making the workout routine a challenge or pleasure as per one's choice.
    Type: Grant
    Filed: November 28, 2005
    Date of Patent: May 29, 2007
    Inventors: Joseph Bendavid, Hongwei Jia
  • Publication number: 20060281612
    Abstract: An exercise device attachable to the chair is provided which comprises a generally “W”-shaped frame separately mounted on a post of a height-telescopic executive type chair, an elastic band disposed and extending through the W-shaped frame, and a tension adjusting mechanism mounted on the chair and connected to the elastic band. The adjusting mechanism is manipulated to adjust the tension of the elastic strap. The exercise device mounted on the executive chair creates a unique and most serious exercise-station at one's home or office. The tension adjusting mechanism slides up and down with the motion of the chair, and by this action the tension of the elastic band increase or decrease significantly, making the workout routine a challenge or pleasure as per one's choice.
    Type: Application
    Filed: November 28, 2005
    Publication date: December 14, 2006
    Inventors: Joseph Bendavid, Hongwei Jia